SANYO 5LP01SS

5LP01SS
Ordering number : EN6622B
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
5LP01SS
General-Purpose Switching Device
Applications
Features
•
•
•
•
Low ON-resistance
Ultrahigh-speed switching
2.5V drive
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
--50
V
±10
V
--0.07
A
Allowable Power Dissipation
ID
IDP
PD
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
--0.28
A
0.15
W
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Package Dimensions
Product & Package Information
unit : mm (typ)
7029A-003
• Package
: SSFP
• JEITA, JEDEC
: SC-81
• Minimum Packing Quantity : 8,000 pcs./reel
5LP01SS-TL-E
5LP01SS-TL-H
1.4
0.1
3
Packing Type: TL
Marking
2
0.45
TL
0.2
Electrical Connection
0.6
0.07
XB
LOT No.
1
LOT No.
0.3
0.8
0 to 0.02
0.07
1.4
0.3
0.25
1
2
3
3
1 : Gate
2 : Source
3 : Drain
SANYO : SSFP
1
2
http://www.sanyosemi.com/en/network/
O0312 TKIM/71206/42006PE MSIM TB-00002118/91400 TSIM TA-2042 No.6622-1/7
5LP01SS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
ID= --1mA, VGS=0V
VDS= --50V, VGS=0V
VGS=±8V, VDS=0V
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID= --40mA, VGS= --4V
ID= --20mA, VGS= --2.5V
ID= --5mA, VGS= --1.5V
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Qgd
Diode Forward Voltage
VSD
typ
Unit
max
--50
V
--0.4
--1
μA
±10
μA
--1.4
70
V
100
VDS= --10V, f=1MHz
td(off)
tf
Gate-to-Drain “Miller” Charge
min
VDS= --10V, ID= --100μA
VDS= --10V, ID= --40mA
RDS(on)3
Input Capacitance
Ratings
Conditions
See specified Test Circuit.
VDS= --10V, VGS= --10V, ID= --70mA
mS
18
23
Ω
20
28
Ω
30
60
Ω
7.4
pF
4.2
pF
1.3
pF
20
ns
35
ns
160
ns
150
ns
1.40
nC
0.16
nC
0.23
IS= --70mA, VGS=0V
nC
--0.85
--1.2
V
Switching Time Test Circuit
VDD= --25V
VIN
0V
--4V
ID= --40mA
RL=625Ω
D
VIN
VOUT
PW=10μs
D.C.≤1%
G
5LP01SS
P.G
50Ω
S
Ordering Information
Package
Shipping
memo
5LP01SS-TL-E
SSFP
8,000pcs./reel
Pb Free
5LP01SS-TL-H
SSFP
8,000pcs./reel
Pb Free and Halogen Free
ID -- VDS
--0.03
VGS= --1.5V
--0.01
--0.10
VDS= --10V
75°
C
.0
V
--0.04
--0.02
Ta=
--25°
C
--0.12
--2.0V
Drain Current, ID -- A
--0.05
5V
.
--2
--3
.5V
Drain Current, ID -- A
--4
.0
V
--0.06
ID -- VGS
--0.14
--3
--6
.0
V
--0.07
25°C
Device
--0.08
--0.06
--0.04
--0.02
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
Drain-to-Source Voltage, VDS -- V
--1.8
--2.0
IT00090
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
Gate-to-Source Voltage, VGS -- V
--3.5
--4.0
IT00091
No.6622-2/7
5LP01SS
RDS(on) -- VGS
40
RDS(on) -- ID
100
VGS= --4V
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Ta=25°C
35
30
25
--20mA
ID= --40mA
20
15
10
--1
--2
--3
--4
--5
--6
--7
--8
--9
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
25°C
--25°C
2
3
5
7
2
100
7
25°C
Ta=75°C
3
2
--25°C
2
3
5
7
2
--0.1
Drain Current, ID -- A
RDS(on) -- ID
m
-20
,V
=ID
mA
0
-4
=ID
20
0V
-4.
=S
G
15
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
2
2
3
5
7
VDS= --10V
5
3
2
5°C
Ta= --2
0.1
7
5
75°C
25°C
3
2
2
3
5
7
VDD= --25V
VGS = --4V
7
--0.01
--0.5
--0.6
--0.7
Switching Time, SW Time -- ns
--25°C
2
25°C
3
Ta=7
5°C
Source Current, IS -- A
2
5
--0.8
--0.9
--1.0
Diode Forward Voltage, VSD -- V
--1.1
--1.2
IT00098
3
IT00097
SW Time -- ID
1000
7
2
--0.1
Drain Current, ID -- A
VGS=0V
3
IT00095
yfs -- ID
IT00096
--0.1
2
--0.01
7
0.01
--0.01
160
IS -- VSD
3
--25°C
Drain Current, ID -- A
Forward Transfer Admittance, yfs -- S
5V
V
A,
3
Ta=75°C
25°C
1.0
30
25
5
IT00094
35
-2.
=S
G
7
10
--0.001
3
RDS(on) -- Ta
40
3
IT00093
VGS= --1.5V
3
5
2
--0.1
Drain Current, ID -- A
100
5
10
--0.01
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Ta=75°C
2
VGS= --2.5V
7
10
--60
3
IT00092
RDS(on) -- ID
1000
5
10
--0.01
--10
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
0
7
5
tf
3
2
td(off)
100
7
5
tr
3
td(on)
2
10
--0.01
2
3
5
Drain Current, ID -- A
7
--0.1
IT00099
No.6622-3/7
5LP01SS
Ciss, Coss, Crss -- VDS
100
7
5
Gate-to-Source Voltage, VGS -- V
Ciss, Coss, Crss -- pF
VDS= --10V
ID= --70mA
--9
3
2
10
7
5
Ciss
Coss
3
2
Crss
1.0
7
5
3
--8
--7
--6
--5
--4
--3
--2
--1
2
0
0.1
0
--5
--10
--15
--20
--25
--30
--35
--40
Drain-to-Source Voltage, VDS -- V
--45
--50
IT00100
0
0.2
0.4
0.6
0.8
1.0
1.2
Total Gate Charge, Qg -- nC
1.4
1.6
IT00101
PD -- Ta
0.20
Allowable Power Dissipation, PD -- W
VGS -- Qg
--10
f=1MHz
0.15
0.10
0.05
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT02381
No.6622-4/7
5LP01SS
Embossed Taping Specification
5LP01SS-TL-E, 5LP01SS-TL-H
No.6622-5/7
5LP01SS
Outline Drawing
5LP01SS-TL-E, 5LP01SS-TL-H
Land Pattern Example
Mass (g) Unit
0.0018 mm
* For reference
Unit: mm
1.2
0.5
0.5
0.45
0.45
0.45 0.45
No.6622-6/7
5LP01SS
Note on usage : Since the 5LP01SS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
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the performance, characteristics, and functions of the described products in the independent state, and are
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This catalog provides information as of October, 2012. Specifications and information herein are subject
to change without notice.
PS No.6622-7/7