APT60GT60JRD
600V
Thunderbolt IGBT™ & FRED
E
E
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT™ combined
with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers
superior ruggedness and ultrafast switching speed.
90A
27
2
T-
C
G
SO
"UL Recognized"
• Low Forward Voltage Drop
• Low Tail Current
• Ultrafast Soft Recovery
Antiparallel Diode
ISOTOP ®
• High Freq. Switching to 150KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
C
G
E
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS (IGBT)
Symbol
APT60GF60JRD
Parameter
Collector-Emitter Voltage
600
VCGR
Collector-Gate Voltage (RGE = 20KΩ)
600
VGE
Gate-Emitter Voltage
I C1
Continuous Collector Current @ TC = 25°C
I C2
Continuous Collector Current @ TC = 110°C
@ TC = 25°C
I CM2
Pulsed Collector Current
1
@ TC = 110°C
PD
Total Power Dissipation
TJ,TSTG
Volts
±20
90
60
Amps
180
120
375
Watts
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
PR
EL
TL
A
1
IN
Pulsed Collector Current
IM
I CM1
RY
VCES
UNIT
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Characteristic / Test Conditions
MIN
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA)
600
Gate Threshold Voltage
(VCE = VGE, I C = 700µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C)
TYP
MAX
3
4
5
1.6
2.0
2.5
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150°C)
2.8
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
0.3
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
3.0
±100
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
UNIT
Volts
mA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
052-6260 Rev B
Symbol
DYNAMIC CHARACTERISTICS (IGBT)
Symbol
Characteristic
Test Conditions
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller") Charge
td(on)
tr
td(off)
tf
Eon
55
RY
14
VGE = 15V
Turn-on Delay Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
25
75
95
3
R G = 5Ω
1.9
3
TJ = +150°C
2.4
PR
Turn-off Delay Time
3
Total Switching Losses
gfe
Forward Transconductance
mJ
4.3
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
25
75
VGE = 15V
I C = I C2
260
R G = 5Ω
90
TJ = +25°C
3.8
Fall Time
Ets
ns
300
VGE = 15V
I C = I C2
Turn-on Delay Time
ns
140
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
Rise Time
nC
200
RG = 5Ω
Total Switching Losses
tf
Resistive Switching (25°C)
A
Fall Time
UNIT
pF
120
I C = I C2
Ets
td(off)
280
20
Turn-off Delay Time
Rise Time
Gate Charge
VGE = 15V
VCC = 0.8VCES
Turn-off Switching Energy
tr
180
I C = I C2
Rise Time
Eoff
td(on)
f = 1 MHz
IN
tf
Turn-on Delay Time
MAX
400
VCC = 0.8VCES
IM
td(off)
2
TYP
3200
VCE = 25V
EL
tr
MIN
Capacitance
VGE = 0V
Cies
td(on)
APT60GT60JRD
VCE = 20V, I C = I C2
ns
mJ
6
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol
RΘJC
RΘJA
WT
Torque
052-6260 Rev B
1
2
3
Characteristic
MIN
TYP
MAX
Junction to Case (IGBT)
0.33
Junction to Case (FRED)
0.66
°C/W
20
Junction to Ambient
Package Weight
UNIT
1.03
oz
29.2
gm
13.6
lb•in
1.5
N•m
Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)
Repetitive Rating: Pulse width limited by maximum junction temperature.
See MIL-STD-750 Method 3471
These switching losses are a combination of both the FRED and the IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT60GT60JRD
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS (FRED)
Symbol
VR
Characteristic / Test Conditions
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 85°C, Duty Cycle = 0.5)
600
Volts
100
RY
RMS Forward Current
60
Amps
600
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
IN
A
IFSM
UNIT
Maximum D.C. Reverse Voltage
VRRM
IF(RMS)
APT60GT60JRD
STATIC ELECTRICAL CHARACTERISTICS (FRED)
Characteristic / Test Conditions
MIN
IM
Symbol
TYP
1.75
IF = 120A
Volts
1.5
IF = 60A, TJ = 150°C
PR
EL
Maximum Forward Voltage
UNIT
1.8
IF = 60A
VF
MAX
DYNAMIC CHARACTERISTICS (FRED)
Characteristic
MIN
TYP
MAX
70
trr1
Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/µs, VR = 30V, TJ = 25°C
55
trr2
Reverse Recovery Time
TJ = 25°C
70
trr3
IF = 60A, diF /dt = -480A/µs, VR = 350V
TJ = 100°C
90
tfr1
Forward Recovery Time
TJ = 25°C
160
tfr2
IF = 60A, diF /dt = 480A/µs, VR = 350V
TJ = 100°C
160
IRRM1
Reverse Recovery Current
TJ = 25°C
10
17
IRRM2
IF = 60A, diF /dt = -480A/µs, VR = 350V
TJ = 100°C
20
30
Qrr1
Recovery Charge
TJ = 25°C
350
Qrr2
IF = 60A, diF /dt = -480A/µs, VR = 350V
TJ = 100°C
900
Vfr1
Forward Recovery Voltage
TJ = 25°C
6
Vfr2
IF = 60A, diF /dt = 480A/µs, VR = 350V
TJ = 100°C
6
Rate of Fall of Recovery Current
TJ = 25°C
800
IF = 60A, diF /dt = -480A/µs, VR = 350V
TJ = 100°C
500
diM/dt
UNIT
ns
Amps
nC
Volts
A/µs
052-6260 Rev B
Symbol
APT60GT60JRD
2500
Qrr, REVERSE RECOVERY CHARGE
(nano-COULOMBS)
160
TJ = 150°C
120
TJ = 100°C
TJ = 25°C
80
TJ = -55°C
40
0
0.5
1.0
1.5
2.0
2.5
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 1, Forward Voltage Drop vs Forward Current
60A
1000
500
30A
30A
20
10
IM
TJ = 100°C
VR = 350V
160
120A
60A
PR
30A
EL
200
120
80
40
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 5, Reverse Recovery Time vs Current Slew Rate
0.7
0.5
Qrr
1.2
trr
trr
IRRM
0.8
Qrr
0.4
0.0
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4, Dynamic Parameters vs Junction Temperature
15.0
1200
1000
TJ = 100°C
VR = 350V
IF = 60A
12.5
800
10.0
Vfr
600
7.5
400
5.0
200
Tfr
2.5
0
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
D=0.5
0.2
0.1
0.05
0.05
0.01
0.02
Note:
0.01
PDM
0.1
t1
SINGLE PULSE
0.005
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
Vfr, FORWARD RECOVERY VOLTAGE
(VOLTS)
30
1.6
RY
60A
IN
Kf, DYNAMIC PARAMETERS
(NORMALIZED)
120A
40
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 3, Reverse Recovery Current vs Current Slew Rate
trr, REVERSE RECOVERY TIME
(nano-SECONDS)
120A
1500
2.0
TJ = 100°C
VR = 350V
tfr, FORWARD RECOVERY TIME
(nano-SECONDS)
IRRM, REVERSE RECOVERY CURRENT
(AMPERES)
50
ZΘJC, THERMAL IMPEDANCE
(°C/W)
2000
0
10
50
100
500 1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 2, Reverse Recovery Charge vs Current Slew Rate
0
052-6260 Rev B
TJ = 100°C
VR = 350V
A
IF, FORWARD CURRENT
(AMPERES)
200
10-3
10-2
10-1
VR, REVERSE
VOLTAGE
(VOLTS)
RECTANGULAR
PULSE
DURATION
(SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
10
APT60GT60JRD
Vr
D.U.T.
trr/Qrr
Waveform
30µH
PEARSON 411
CURRENT
TRANSFORMER
PR
EL
IM
IN
A
RY
+15v
diF /dt Adjust
0v
-15v
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
1
IF - Forward Conduction Current
2
diF /dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
3
IRRM - Peak Reverse Recovery Current.
4
trr - Reverse Recovery Time Measured from Point of IF
1
4
6
Zero
5
3
Current Falling Through Zero to a Tangent Line { 6 diM/dt}
Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM.
0.5 IRRM
0.75 IRRM
2
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Qrr = 1/2 (trr . IRRM)
Figure 8, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Emitter
052-6260 Rev B
30.1 (1.185)
30.3 (1.193)
Collector
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Emitter
Dimensions in Millimeters and (Inches)
Gate