ALPHA AO4408

Rev 3: June 2004
AO4408, AO4408L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4408 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and fast
switching. This device makes an excellent high side
switch for notebook CPU core DC-DC conversion.
AO4408L(Green Product) is offered in a lead-free
package.
VDS (V) = 30V
ID = 12A
RDS(ON) < 13mΩ (VGS = 10V)
RDS(ON) < 16mΩ (VGS = 4.5V)
D
D
D
D
D
S
S
S
G
G
S
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Pulsed Drain Current
TA=70°C
B
Avalanche Current B,E
Repetitive Avalanche Energy
B,E
L=0.1mH
TA=25°C
Power Dissipation
±12
V
Junction and Storage Temperature Range
10
IAV
30
A
EAV
100
mJ
80
3
W
2.1
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
A
ID
IDM
PD
TA=70°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
12
TA=25°C
Continuous Drain
A
Current
Maximum
30
RθJA
RθJL
Typ
23
48
12
°C
Max
40
65
16
Units
°C/W
°C/W
°C/W
AO4408, AO4408L
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
On state drain current
VGS=4.5V, VDS=5V
40
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=12A
TJ=125°C
VGS=4.5V, ID=10A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=10A,VGS=0V
Maximum Body-Diode Continuous Current
VDS=5V, ID=10A
30
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=12A
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
1.5
VGS=10V, VDS=15V, RL=1.2Ω,
RGEN=3Ω
µA
100
nA
2.5
V
A
10.5
14
16
21
13
16.5
48
1020
VGS=0V, VDS=15V, f=1MHz
Units
V
mΩ
mΩ
S
0.76
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
1
5
VGS(th)
Coss
0.003
TJ=55°C
ID(ON)
IS
Max
30
VDS=24V, VGS=0V
IDSS
Typ
1
V
4.5
A
1200
pF
320
pF
80
pF
0.25
0.5
Ω
10.3
12.5
nC
2.1
nC
3.9
nC
3.9
5.5
ns
3
6
ns
19.2
30
ns
2.6
5
ns
32
32
ns
nC
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=12A, dI/dt=100A/µs
26
Qrr
Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs
18
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
100
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4408, AO4408L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
30
10V
4.5V
VDS=5V
25
3.5V
3V
20
30
ID(A)
ID (A)
40
20
15
125°C
10
10
5
VGS=2.5V
25°C
0
0
0
1
2
3
4
5
0.5
VDS (Volts)
Fig 1: On-Region Characteristics
1.5
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics
16
Normalized On-Resistance
1.8
14
RDS(ON) (mΩ)
1
VGS=4.5V
12
10
VGS=10V
8
0
5
10
15
VGS=10V
ID=10A
1.6
VGS=4.5V
1.4
1.2
1
0.8
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
40
1.0E+01
VGS=0V
ID=10A
1.0E+00
125°C
30
IS (A)
RDS(ON) (mΩ)
100
1.0E-01
125°C
20
1.0E-02
25°C
1.0E-03
25°C
10
1.0E-04
1.0E-05
0
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4408, AO4408L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
5
VDS=15V
ID=12A
1250
Capacitance (pF)
VGS (Volts)
4
3
2
1
Ciss
1000
750
Coss
500
250
Crss
0
0
2
4
6
8
10
0
12
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
50
10µs
RDS(ON)
limited
1ms
10.0
100µs
40
Power (W)
ID (Amps)
10ms
0.1s
1s
1.0
10s
TJ(Max)=150°C
TA=25°C
DC
1
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
100
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
20
0
0.001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
30
10
0.1
0.1
TJ(Max)=150°C
TA=25°C
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
100
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4408, AO4408L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4
TA=25°C
60
Power Dissipation (W)
ID(A), Peak Avalanche Current
70
50
40
30
tA =
L ⋅ ID
BV − VDD
20
10
0
0.00001
3
2
10s
1
SteadyState
0
0.0001
Time in avalanche, tA (s)
Figure 12: Avalanche capability
Alpha & Omega Semiconductor, Ltd.
0.001
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note A)
150