AO4824 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features Q1 The AO4824 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. Standard Product AO4824 is Pb-free (meets ROHS & Sony 259 specifications). AO4824L is a Green Product ordering option. AO4824 and AO4824L are electrically identical. Q2 VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ RDS(ON) < 27mΩ VDS(V) = 30V ID=9.8A (VGS = 10V) <13mΩ (VGS = 10V) <15mΩ (VGS = 4.5V) D1 D2 SOIC-8 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C Pulsed Drain Current B IDM TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET Q1 t ≤ 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient Maximum Junction-to-Lead C Steady-State Parameter: Thermal Characteristics MOSFET Q2 t ≤ 10s Maximum Junction-to-AmbientA A Maximum Junction-to-Ambient Maximum Junction-to-Lead C G2 S1 Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. PD TJ, TSTG Symbol RθJA RθJL Symbol RθJA RθJL S2 Max Q1 30 Max Q2 30 Units V ±20 ±12 V 8.5 6.8 9.8 7.8 A 30 40 2 2 1.28 -55 to 150 1.28 -55 to 150 Typ 48 Max 62.5 Units 74 35 110 40 °C/W Typ Max Units 48 74 35 62.5 110 40 °C/W W °C AO4824 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Min Parameter STATIC BVDSS PARAMETERS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current VGS(th) Gate-Body leakage current ID(ON) Gate Threshold Voltage On state drain current VGS=10V, VDS=5V VGS=10V, ID=8.5A gFS VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=8.5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Rg Reverse Transfer Capacitance Gate resistance 1 Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time 1 5 Units V 100 µA nA 1.8 3 V 13.8 20 17 25 21 27 mΩ mΩ 1 3 S V A 30 TJ=125°C VGS=0V, VDS=15V, f=1MHz A 23 0.76 1040 180 110 0.7 1250 0.85 pF pF pF Ω 19.2 23 nC 9.36 11.2 nC VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Qgs 0.003 TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Max 30 ID=250µA, VGS=0V VDS=24V, VGS=0V RDS(ON) VSD IS Typ Conditions VGS=10V, VDS=15V, ID=8.5A 2.6 4.2 VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 5.2 4.4 17.3 3.3 16.7 6.7 IF=8.5A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs nC nC 7.5 6.5 25 5 21 10 ns ns ns ns ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 4 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4824 Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 4V 10V 25 20 3.5V 12 ID(A) ID (A) VDS=5V 16 4.5V 15 125°C 8 10 13.4 VGS=3V 5 22 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 16 26 0.76 3 2.5 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 26 Normalized On-Resistance 1.6 24 VGS=4.5V 22 RDS(ON) (mΩ) 25°C 4 20 18 16 VGS=10V 14 12 10 VGS=10V ID=8.5A 1.4 VGS=4.5V 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 50 1.0E+00 ID=8.5A 1.0E-01 30 IS (A) RDS(ON) (mΩ) 40 125°C 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4824 Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=8.5A 1250 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 0 4 8 12 16 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 22 26 100µs 1ms 10.0 0.1s 1.0 1s TJ(Max)=150°C TA=25°C 25 30 30 20 10 10s DC 0 0.001 0.1 1 20 TJ(Max)=150°C TA=25°C 40 10µs 10ms 10 100 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 15 0.76 50 RDS(ON) limited 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics Power (W) ID (Amps) 16 Crss 0 0 ZθJA Normalized Transient Thermal Resistance 13.4 250 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4824 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance gFS VSD IS Conditions Min ID=250µA, VGS=0V VDS=24V, VGS=0V 30 0.004 VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=9.8A 0.6 40 TJ=125°C VGS=4.5V, ID=9A Forward Transconductance VDS=5V, ID=9.8A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 1 5 µA 1.1 100 2 10.5 13.4 12 13 17 15 mΩ 1 3 S V A 37 0.73 nA V A mΩ VGS=0V, VDS=15V, f=1MHz 3656 4250 256 pF pF VGS=0V, VDS=0V, f=1MHz 168 0.86 pF Ω VGS=4.5V, VDS=15V, ID=9.8A 30.5 4.5 tD(on) tr Turn-On DelayTime Turn-On Rise Time tD(off) tf trr Turn-Off DelayTime Turn-Off Fall Time IF=9.8A, dI/dt=100A/µs Body Diode Reverse Recovery time Body Diode Reverse Recovery charge IF=9.8A, dI/dt=100A/µs Qrr 30 Max Units V TJ=55°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Typ VGS=10V, VDS=15V, RL=1.6Ω, RGEN=3Ω 1.05 36 nC nC 8.5 5.5 8.2 nC ns 3.1 52.4 5.7 5 75 8.5 ns ns ns 21.5 11 26 15 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 4: Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4824 Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 10V 25 4.5V 30 20 ID(A) 2.5V ID (A) VDS=5V 20 VGS=2V 15 125°C 10 10 5 25°C 0 0 0 1 2 3 4 0.5 5 1 13 Normalized On-Resistance RDS(ON) (mΩ) 2 2.5 1.8 VGS=4.5V 12 11 VGS=10V 10 9 0 5 10 15 20 25 ID=9.8A 1.6 VGS=4.5V 1.4 VGS=10V 1.2 1 0.8 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature (°C) Figure 4: On resistance vs. Junction Temperature 30 1.0E+01 1.0E+00 ID=9.8A 25 125°C 20 125°C 15 IS (A) 1.0E-01 RDS(ON) (mΩ) 1.5 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 25°C 1.0E-02 1.0E-03 25°C 1.0E-04 10 1.0E-05 5 0.0 0 2 4 6 8 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4824 Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 5 VDS=15V ID=9.8A Capacitance (pF) VGS (Volts) 4 f=1MHz VGS=0V Ciss 3 2 1000 Coss 1 Crss 0 100 0 5 10 15 20 25 30 35 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 RDS(ON) limited TJ(Max)=150°C, TA=25°C 100µs 10µs 1ms 10.0 30 Power (W) ID (A) 10ms 0.1s 1.0 TJ(Max)=150°C TA=25°C 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000