TI OPA2170AIDR

OPA170
OPA2170
OPA4170
SBOS557A – AUGUST 2011 – REVISED SEPTEMBER 2011
www.ti.com
36V, Single-Supply, SOT553, Low-Power
OPERATIONAL AMPLIFIERS
Check for Samples: OPA170, OPA2170, OPA4170
FEATURES
DESCRIPTION
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The OPA170, OPA2170 and OPA4170 (OPAx170)
are a family of 36V, single-supply, low-noise
operational amplifiers that feature micro packages
with the ability to operate on supplies ranging from
+2.7V (±1.35V) to +36V (±18V). They offer good
offset, drift, and bandwidth with low quiescent current.
The single, dual, and quad versions all have identical
specifications for maximum design flexibility.
1
2
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Supply Range: +2.7V to +36V, ±1.35V to ±18V
Low Noise: 19nV/√Hz
RFI Filtered Inputs
Input Range Includes the Negative Supply
Input Range Operates to Positive Supply
Rail-to-Rail Output
Gain Bandwidth: 1.2MHz
Low Quiescent Current: 110µA per Amplifier
High Common-Mode Rejection: 120dB
Low Bias Current: 15pA (max)
Industry-Standard Packages:
– 8-Pin SOIC
– 8-Pin MSOP
– 14-Pin TSSOP
microPackages:
– Single in 5-Pin SOT553
– Dual in 8-Pin VSSOP
APPLICATIONS
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Tracking Amplifier in Power Modules
Merchant Power Supplies
Transducer Amplifiers
Bridge Amplifiers
Temperature Measurements
Strain Gauge Amplifiers
Precision Integrators
Battery-Powered Instruments
Test Equipment
Unlike most op amps, which are specified at only one
supply voltage, the OPAx170 family of op amps is
specified from +2.7V to +36V. Input signals beyond
the supply rails do not cause phase reversal. The
OPAx170 family is stable with capacitive loads up to
300pF. The input can operate 100mV below the
negative rail and within 2V of the positive rail for
normal operation. Note that these devices can
operate with full rail-to-rail input 100mV beyond the
positive rail, but with reduced performance within 2V
of the positive rail.
The OPA170 is available in SOT553, SOT23-5, and
SO-8 packages. The dual OPA2170 comes in
VSSOP-8, MSOP-8, and SO-8 packages. The quad
OPA4170 is offered in TSSOP-14 and SO-14
packages. The OPAx170 op amps are specified
from –40°C to +125°C.
Package Footprint Comparison (to Scale)
Product Family
DEVICE
PACKAGE
OPA170 (single)
SOT553, SOT23-5, SO-8
OPA2170 (dual)
VSSOP-8, MSOP-8, SO-8
OPA4170 (quad)
TSSOP-14, SO-14
Package Height Comparison (to Scale)
.
D (SO-8)
DBV (SOT23-5)
DRL (SOT553)
Smallest Packaging for 36V Op Amps
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011, Texas Instruments Incorporated
OPA170
OPA2170
OPA4170
SBOS557A – AUGUST 2011 – REVISED SEPTEMBER 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION (1)
PRODUCT
PACKAGE-LEAD
PACKAGE
DESIGNATOR
PACKAGE
MARKING
SOT553-5
DRL
DAQ
OPA170
OPA2170
SOT23-5
DBV
OSVI
SO-8
D
O170A
MSOP-8
DGK
OPNI
VSSOP-8
DCU
OPQC
SO-8
D
2170A
SO-14
D
OPA4170
TSSOP-14
PW
OPA4170
OPA4170
(1)
ORDERING NUMBER
TRANSPORT MEDIA,
QUANTITY
OPA170AIDRLT
Tape and Reel, 250
OPA170AIDRLR
Tape and Reel, 4000
OPA170AIDBVT
Tape and Reel, 250
OPA170AIDBVR
Tape and Reel, 3000
OPA170AID
Rail, 75
OPA170AIDR
Tape and Reel, 2500
OPA2170AIDGK
Rail, 80
OPA2170AIDGKR
Tape and Reel, 2500
OPA2170AIDCUT
Tape and Reel, 250
OPA2170AIDCUR
Tape and Reel, 3000
OPA2170AID
Rail, 75
OPA2170AIDR
Tape and Reel, 2500
OPA4170AID
Rail, 50
OPA4170AIDR
Tape and Reel, 2500
OPA4170AIPW
Rail, 90
OPA4170AIPWR
Tape and Reel, 2000
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS (1)
Over operating free-air temperature range, unless otherwise noted.
Supply voltage
Signal input terminals
OPA170, OPA2170, OPA4170
UNIT
±20, +40 (single supply)
V
Voltage
(V–) – 0.5 to (V+) + 0.5
V
Current
±10
mA
Output short circuit (2)
Continuous
Operating temperature
–55 to +150
°C
Storage temperature
–65 to +150
°C
Junction temperature
+150
°C
4
kV
750
V
ESD ratings
(1)
(2)
2
Human body model (HBM)
Charged device model (CDM)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
Short-circuit to ground, one amplifier per package.
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OPA170
OPA2170
OPA4170
SBOS557A – AUGUST 2011 – REVISED SEPTEMBER 2011
www.ti.com
ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.
At TA = +25°C, VCM = VOUT = VS/2, and RL = 10kΩ connected to VS/2, unless otherwise noted.
OPA170, OPA2170, OPA4170
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
0.25
±1.8
mV
±2
mV
OFFSET VOLTAGE
Input offset voltage
VOS
Over temperature
Drift
vs power supply
±0.3
±2
µV/°C
VS = +4V to +36V
1
±5
µV/V
dc
5
dVOS/dT
PSRR
Channel separation, dc
µV/V
INPUT BIAS CURRENT
Input bias current
±8
IB
Over temperature
Input offset current
±4
IOS
Over temperature
±15
pA
±3.5
nA
±15
pA
±3.5
nA
NOISE
Input voltage noise
Input voltage noise density
en
f = 0.1Hz to 10Hz
2
µVPP
f = 100Hz
22
nV/√Hz
f = 1kHz
19
nV/√Hz
INPUT VOLTAGE
Common-mode voltage range (1)
Common-mode rejection ratio
(V–) – 0.1V
VCM
CMRR
(V+) – 2V
V
VS = ±2V, (V–) – 0.1V < VCM < (V+) – 2V
90
104
dB
VS = ±18V, (V–) – 0.1V < VCM < (V+) – 2V
104
120
dB
INPUT IMPEDANCE
Differential
100 || 3
Common-mode
MΩ || pF
6 || 3
1012 Ω || pF
130
dB
OPEN-LOOP GAIN
Open-loop voltage gain
VS = +4V to +36V, (V–) + 0.35V < VO < (V+) –
0.35V
AOL
110
FREQUENCY RESPONSE
Gain bandwidth product
Slew rate
Settling time
GBP
SR
tS
MHz
0.4
V/µs
To 0.1%, VS = ±18V, G = +1, 10V step
20
µs
To 0.01% (12 bit), VS = ±18V, G = +1, 10V step
28
µs
2
µs
0.0002
%
VIN × Gain > VS
Overload recovery time
Total harmonic distortion + noise
1.2
G = +1
THD+N
G = +1, f = 1kHz, VO = 3VRMS
OUTPUT
Voltage output swing from rail
VO
Positive rail
Negative Rail
Over temperature
Short-circuit current
Capacitive load drive
Open-loop output resistance
IL = 0mA, VS = +4V to +36V
10
IL sourcing 1mA, VS = +4V to +36V
115
mV
mV
IL = 0mA, VS = +4V to +36V
8
mV
IL sinking 1mA, VS = +4V to +36V
70
mV
VS = 5V, RL = 10kΩ
(V–) + 0.03
(V+) – 0.05
RL = 10kΩ, AOL ≥ 110dB
(V–) + 0.35
(V+) – 0.35
ISC
+17/–20
CLOAD
f = 1MHz, IO = 0A
V
mA
See Typical Characteristics
RO
V
pF
Ω
900
POWER SUPPLY
Specified voltage range
VS
Quiescent current per amplifier
IQ
+2.7
IO = 0A
Over temperature
(1)
IO = 0A
110
+36
V
145
µA
155
µA
The input range can be extended beyond (V+) – 2V up to V+. See the Typical Characteristics and Application Information sections for
additional information.
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): OPA170 OPA2170 OPA4170
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OPA170
OPA2170
OPA4170
SBOS557A – AUGUST 2011 – REVISED SEPTEMBER 2011
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.
At TA = +25°C, VCM = VOUT = VS/2, and RL = 10kΩ connected to VS/2, unless otherwise noted.
OPA170, OPA2170, OPA4170
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TEMPERATURE
Specified range
–40
+125
°C
Operating range
–55
+150
°C
THERMAL INFORMATION: OPA170
OPA170
THERMAL METRIC (1)
D (SO)
DBV (SOT23)
DRL (SOT553)
8 PINS
5 PINS
5 PINS
208.1
θJA
Junction-to-ambient thermal resistance
149.5
245.8
θJC(top)
Junction-to-case(top) thermal resistance
97.9
133.9
0.1
θJB
Junction-to-board thermal resistance
87.7
83.6
42.4
ψJT
Junction-to-top characterization parameter
35.5
18.2
0.5
ψJB
Junction-to-board characterization parameter
89.5
83.1
42.2
θJC(bottom)
Junction-to-case(bottom) thermal resistance
N/A
N/A
N/A
(1)
UNITS
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
THERMAL INFORMATION: OPA2170
OPA2170
THERMAL METRIC (1)
D (SO)
DCU (VSSOP)
DGK (MSOP)
8 PINS
8 PINS
8 PINS
180
θJA
Junction-to-ambient thermal resistance
134.3
175.2
θJC(top)
Junction-to-case(top) thermal resistance
72.1
74.9
55
θJB
Junction-to-board thermal resistance
60.6
22.2
130
ψJT
Junction-to-top characterization parameter
18.2
1.6
5.3
ψJB
Junction-to-board characterization parameter
53.8
22.8
120
θJC(bottom)
Junction-to-case(bottom) thermal resistance
N/A
N/A
N/A
(1)
UNITS
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
THERMAL INFORMATION: OPA4170
OPA4170
THERMAL METRIC (1)
D (SO)
PW (TSSOP)
14 PINS
14 PINS
θJA
Junction-to-ambient thermal resistance
93.2
106.9
θJC(top)
Junction-to-case(top) thermal resistance
51.8
24.4
θJB
Junction-to-board thermal resistance
49.4
59.3
ψJT
Junction-to-top characterization parameter
13.5
0.6
ψJB
Junction-to-board characterization parameter
42.2
54.3
θJC(bottom)
Junction-to-case(bottom) thermal resistance
N/A
N/A
(1)
4
UNITS
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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Product Folder Link(s): OPA170 OPA2170 OPA4170
OPA170
OPA2170
OPA4170
SBOS557A – AUGUST 2011 – REVISED SEPTEMBER 2011
www.ti.com
PIN CONFIGURATIONS
DRL PACKAGE: OPA170
SOT-553
(TOP VIEW)
IN+
1
V-
2
IN-
3
5
4
D, DGK, AND DCU PACKAGES: OPA2170
MSOP-8, SO-8, AND VSSOP-8
(TOP VIEW)
V+
1
V-
2
+IN
3
NC
(1)
1
8
V+
-IN A
2
7
OUT B
+IN A
3
6
-IN B
V-
4
5
+IN B
5
V+
4
-IN
D AND PW PACKAGES: OPA4170
SO-14 AND TSSOP-14
(TOP VIEW)
D PACKAGE: OPA170
SO-8
(TOP VIEW)
(1)
1
OUT
DBV PACKAGE: OPA170
SOT23-5
(TOP VIEW)
OUT
OUT A
8
NC(1)
-IN
2
7
V+
+IN
3
6
OUT
V-
4
5
NC(1)
OUT A
1
14
OUT D
-IN A
2
13
-IN D
+IN A
3
12
+IN D
V+
4
11
V-
+IN B
5
10
+IN C
-IN B
6
9
-IN C
OUT B
7
8
OUT C
No internal connection.
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): OPA170 OPA2170 OPA4170
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OPA170
OPA2170
OPA4170
SBOS557A – AUGUST 2011 – REVISED SEPTEMBER 2011
www.ti.com
TYPICAL CHARACTERISTICS
TABLE OF GRAPHS
Table 1. Characteristic Performance Measurements
6
DESCRIPTION
FIGURE
Offset Voltage Production Distribution
Figure 1
Offset Voltage Drift Distribution
Figure 2
Offset Voltage vs Temperature
Figure 3
Offset Voltage vs Common-Mode Voltage
Figure 4
Offset Voltage vs Common-Mode Voltage (Upper Stage)
Figure 5
Offset Voltage vs Power Supply
Figure 6
IB and IOS vs Common-Mode Voltage
Figure 7
Input Bias Current vs Temperature
Figure 8
Output Voltage Swing vs Output Current (Maximum Supply)
Figure 9
CMRR and PSRR vs Frequency (Referred-to Input)
Figure 10
CMRR vs Temperature
Figure 11
PSRR vs Temperature
Figure 12
0.1Hz to 10Hz Noise
Figure 13
Input Voltage Noise Spectral Density vs Frequency
Figure 14
THD+N Ratio vs Frequency
Figure 15
THD+N vs Output Amplitude
Figure 16
Quiescent Current vs Temperature
Figure 17
Quiescent Current vs Supply Voltage
Figure 18
Open-Loop Gain and Phase vs Frequency
Figure 19
Closed-Loop Gain vs Frequency
Figure 20
Open-Loop Gain vs Temperature
Figure 21
Open-Loop Output Impedance vs Frequency
Figure 22
Small-Signal Overshoot vs Capacitive Load (100mV Output Step)
Figure 23, Figure 24
No Phase Reversal
Figure 25
Positive Overload Recovery
Figure 26
Negative Overload Recovery
Figure 27
Small-Signal Step Response (100mV)
Figure 28, Figure 29
Large-Signal Step Response
Figure 30, Figure 31
Large-Signal Settling Time (10V Positive Step)
Figure 32
Large-Signal Settling Time (10V Negative Step)
Figure 33
Short-Circuit Current vs Temperature
Figure 34
Maximum Output Voltage vs Frequency
Figure 35
EMIRR IN+ vs Frequency
Figure 36
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OPA170
OPA2170
OPA4170
SBOS557A – AUGUST 2011 – REVISED SEPTEMBER 2011
www.ti.com
TYPICAL CHARACTERISTICS
VS = ±18V, VCM = VS/2, RLOAD = 10kΩ connected to VS/2, and CL = 100pF, unless otherwise noted.
OFFSET VOLTAGE PRODUCTION DISTRIBUTION
OFFSET VOLTAGE DRIFT DISTRIBUTION
25
20
Distribution Taken From 400 Amplifiers
Distribution Taken From 104 Amplifiers
Percentage of Amplifiers (%)
Percentage of Amplifiers (%)
18
16
14
12
10
8
6
4
20
15
10
5
2
0
−1200
−1100
−1000
−900
−800
−700
−600
−500
−400
−300
−200
−100
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
0
Offset Voltage (µV)
Offset Voltage Drift (µV/°C)
G001
G002
Figure 1.
Figure 2.
OFFSET VOLTAGE vs TEMPERATURE
OFFSET VOLTAGE vs COMMON-MODE VOLTAGE
1000
800
5 Typical Units Shown
Offset Voltage (mV)
Offset Voltage (µV)
600
400
200
0
−200
−400
VCM = - 18.1V
−600
−800
−1000
−50
−25
0
25
50
75
Temperature (°C)
100
125
150
Common-Mode Voltage (V)
G003
Figure 3.
Figure 4.
OFFSET VOLTAGE vs COMMON-MODE VOLTAGE
(Upper Stage)
OFFSET VOLTAGE vs POWER SUPPLY
500
VSUPPLY = ±1.35V to ± 18V
5 Typical Units Shown
5 Typical Units Shown
Offset Voltage (µV)
Offset Voltage (mV)
300
Normal
Operation
100
−100
−300
−500
0
2
4
Common-Mode Voltage (V)
Figure 5.
6
8
10
12
VSUPPLY (V)
14
16
18
20
G006
Figure 6.
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OPA170
OPA2170
OPA4170
SBOS557A – AUGUST 2011 – REVISED SEPTEMBER 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
VS = ±18V, VCM = VS/2, RLOAD = 10kΩ connected to VS/2, and CL = 100pF, unless otherwise noted.
IB AND IOS vs COMMON-MODE VOLTAGE
INPUT BIAS CURRENT vs TEMPERATURE
12
2000
10
1500
+IB
8
6
IOS
4
-IB
IBIOS
Input Bias Current (pA)
IB and IOS (pA)
IB+
1000
500
0
2
-500
VCM = 16.1V
VCM = -18.1V
0
-1000
-20
-15
-10
0
-5
5
10
15
20
-75
-50
-25
0
VCM (V)
100
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
(Maximum Supply)
CMRR AND PSRR vs FREQUENCY
(Referred-to Input)
125
150
140
Common-Mode Rejection Ratio (dB),
Power-Supply Rejection Ratio (dB)
16
15
14.5
-14.5
-15
-40°C
+25°C
+125°C
-16
-17
120
100
80
60
40
+PSRR
-PSRR
CMRR
20
0
-18
0
1
2
3
4
5
6
7
8
9
1
10
10
100
1k
10k
100k
1M
Frequency (Hz)
Output Current (mA)
Figure 9.
Figure 10.
CMRR vs TEMPERATURE
PSRR vs TEMPERATURE
VS = ±1.35V
VS = ±2V
25
VS = ±18V
20
15
10
5
-75
-50
-25
0
25
50
75
100
125
150
Power−Supply Rejection Ratio (µV/V)
3
30
0
2
1
0
−1
−2
−3
−75
VS = 2.7V to 36V
VS = 4V to 36V
−50
−25
0
25
50
75
Temperature (°C)
Temperature (°C)
Figure 11.
8
75
Figure 8.
17
Output Voltage (V)
50
Figure 7.
18
Common-Mode Rejection Ratio (mV/V)
25
Temperature (°C)
100
125
150
G012
Figure 12.
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OPA2170
OPA4170
SBOS557A – AUGUST 2011 – REVISED SEPTEMBER 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
VS = ±18V, VCM = VS/2, RLOAD = 10kΩ connected to VS/2, and CL = 100pF, unless otherwise noted.
INPUT VOLTAGE NOISE SPECTRAL DENSITY vs
FREQUENCY
0.1Hz TO 10Hz NOISE
1mV/div
Voltage Noise Density (nV/ Hz)
1000
100
10
1
1
10
100
Figure 13.
0.0001
-120
1k
-140
100k
10k
Total Harmonic Distortion + Noise (%)
Total Harmonic Distortion + Noise (%)
G014
BW = 80kHz
G = +1
RL = 10kW
-60
0.01
-80
0.001
-100
0.0001
-120
0.00001
0.01
0.1
1
10
Total Harmonic Distortion + Noise (dB)
-100
0.1
Total Harmonic Distortion + Noise (dB)
0.001
100
1M
THD+N vs OUTPUT AMPLITUDE
-80
VOUT = 3VRMS
BW = 80kHz
G = +1
RL = 10kW
0.00001
10
100k
Figure 14.
THD+N RATIO vs FREQUENCY
0.01
1k
10k
Frequency (Hz)
-140
20
Output Amplitude (VRMS)
Frequency (Hz)
Figure 15.
Figure 16.
QUIESCENT CURRENT vs TEMPERATURE
QUIESCENT CURRENT vs SUPPLY VOLTAGE
140
130
VS = ±18V
120
IQ (mA)
110
100
90
80
70
VS = ±1.35V
60
−50
−25
0
25
50
75
Temperature (°C)
100
125
150
G017
Figure 17.
Figure 18.
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OPA170
OPA2170
OPA4170
SBOS557A – AUGUST 2011 – REVISED SEPTEMBER 2011
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TYPICAL CHARACTERISTICS (continued)
VS = ±18V, VCM = VS/2, RLOAD = 10kΩ connected to VS/2, and CL = 100pF, unless otherwise noted.
OPEN-LOOP GAIN AND PHASE vs FREQUENCY
140
120
90
Gain
100
40
45
30
0
-45
40
-90
20
-135
0
-180
-20
-225
-40
0.1
1
10
100
1k
10k
100k
1M
Phase (°)
Phase
60
Gain (dB)
80
Gain (dB)
CLOSED-LOOP GAIN vs FREQUENCY
50
135
20
10
0
G = −1
G=1
G = 10
−10
−20
-270
10M
1k
10k
100k
1M
Frequency (Hz)
Frequency (Hz)
Figure 19.
10M
100M
G020
Figure 20.
OPEN-LOOP GAIN vs TEMPERATURE
OPEN-LOOP OUTPUT IMPEDANCE vs FREQUENCY
10k
3
VS = 2.7V
VS = 4V
2.5
1k
VS = 36V
ZO (W)
AOL (mV/V)
2
1.5
100
10
1
1
0.5
1m
0
-75
-50
-25
0
25
50
75
100
125
150
1
10
100
1k
10k
100k
10M
Figure 21.
Figure 22.
SMALL-SIGNAL OVERSHOOT vs CAPACITIVE LOAD
(100mV Output Step)
SMALL-SIGNAL OVERSHOOT vs CAPACITIVE LOAD
(100mV Output Step)
W
W
G = +1
+18V
RI = 10kW
RF = 10kW
ROUT
W
W
W
G = -1
+18V
OPA170
RL
CL
-18V
Figure 23.
10
1M
Frequency (Hz)
Temperature (°C)
W
W
W
ROUT
OPA170
CL
-18V
Figure 24.
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OPA170
OPA2170
OPA4170
SBOS557A – AUGUST 2011 – REVISED SEPTEMBER 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
VS = ±18V, VCM = VS/2, RLOAD = 10kΩ connected to VS/2, and CL = 100pF, unless otherwise noted.
NO PHASE REVERSAL
POSITIVE OVERLOAD RECOVERY
+18V
OPA170
20kW
5V/div
5V/div
-18V
37VPP
Sine Wave
(±18.5V)
+18V
2kW
OPA170
VOUT
VIN
-18V
G = -10
Time (10ms/div)
Time (100ms/div)
Figure 25.
Figure 26.
NEGATIVE OVERLOAD RECOVERY
SMALL-SIGNAL STEP RESPONSE
(100mV)
20kW
2kW
RL = 10kW
CL = 10pF
+18V
OPA170
VOUT
VIN
5V/div
G = -10
20mV/div
-18V
+18V
-18V
Time (10ms/div)
RL
CL
Time (5ms/div)
Figure 27.
Figure 28.
SMALL-SIGNAL STEP RESPONSE
(100mV)
LARGE-SIGNAL STEP RESPONSE
G = +1
RL = 10kW
CL = 10pF
RI
= 2kW
RF
2V/div
RL = 10kW
CL = 10pF
20mV/div
G = +1
OPA170
= 2kW
+18V
OPA170
CL
-18V
G = -1
Time (50ms/div)
Time (5ms/div)
Figure 29.
Figure 30.
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OPA170
OPA2170
OPA4170
SBOS557A – AUGUST 2011 – REVISED SEPTEMBER 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
VS = ±18V, VCM = VS/2, RLOAD = 10kΩ connected to VS/2, and CL = 100pF, unless otherwise noted.
LARGE-SIGNAL SETTLING TIME
(10V Positive Step)
LARGE-SIGNAL STEP RESPONSE
10
G = -1
RL = 10kW
CL = 10pF
8
2V/div
D From Final Value (mV)
6
4
12-Bit Settling
2
0
-2
(±1/2LSB = ±0.012%)
-4
-6
-8
-10
Time (50ms/div)
0
10
20
30
40
50
60
70
80
90
100
Time (ms)
Figure 31.
Figure 32.
LARGE-SIGNAL SETTLING TIME
(10V Negative Step)
10
SHORT-CIRCUIT CURRENT vs TEMPERATURE
G = -1
8
D From Final Value (mV)
6
4
12-Bit Settling
ISC (mA)
2
0
-2
(±1/2LSB = ±0.012%)
-4
-6
-8
−25
−30
−50
-10
0
10
20
30
40
50
30
25
20
15
10
5
0
−5
−10
−15
−20
60
ISC, Source
ISC, Sink
−25
0
25
50
75
Temperature (°C)
100
125
150
G034
Time (ms)
Figure 33.
Figure 34.
MAXIMUM OUTPUT VOLTAGE vs FREQUENCY
EMIRR IN+ vs FREQUENCY
15
140
VS = ±15 V
120
Maximum output range without
slew−rate induced distortion
10
EMIRR IN+ (dB)
Output Voltage (VPP )
12.5
7.5
VS = ±5 V
5
2.5
0
VS = ±1.35 V
1k
10k
100
80
60
40
PRP = -10dBm
VS = ±18V
VCM = 0V
20
100k
Frequency (Hz)
1M
10M
0
10M
100M
G035
Figure 35.
12
1G
10G
Frequency (Hz)
Figure 36.
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OPA170
OPA2170
OPA4170
SBOS557A – AUGUST 2011 – REVISED SEPTEMBER 2011
www.ti.com
APPLICATION INFORMATION
The OPAx170 family of operational amplifiers
provides high overall performance. These devices are
ideal for many general-purpose applications. The
excellent offset drift of only 2µV/°C provides excellent
stability over the entire temperature range. In
addition, the device offers very good overall
performance with high CMRR, PSRR, and AOL. As
with all amplifiers, applications with noisy or
high-impedance power supplies require decoupling
capacitors placed close to the device pins. In most
cases, 0.1µF capacitors are adequate.
OPERATING CHARACTERISTICS
The OPAx170 family of amplifiers is specified for
operation from 2.7V to 36V (±1.35V to ±18V). Many
of the specifications apply from –40°C to +125°C.
Parameters that can exhibit significant variance with
regard to operating voltage or temperature are
presented in the Typical Characteristics.
This device can operate with full rail-to-rail input
100mV beyond the positive rail, but with reduced
performance within 2V of the positive rail. The typical
performance in this range is summarized in Table 2.
PHASE-REVERSAL PROTECTION
The OPAx170 family has an internal phase-reversal
protection. Many op amps exhibit a phase reversal
when the input is driven beyond its linear
common-mode range. This condition is most often
encountered in noninverting circuits when the input is
driven beyond the specified common-mode voltage
range, causing the output to reverse into the opposite
rail. The input of the OPAx170 prevents phase
reversal with excessive common-mode voltage.
Instead, the output limits into the appropriate rail. This
performance is shown in Figure 37.
+18V
OPA170
GENERAL LAYOUT GUIDELINES
-18V
37VPP
Sine Wave
(±18.5V)
5V/div
For best operational performance of the device, good
printed circuit board (PCB) layout practices are
recommended. Low-loss, 0.1µF bypass capacitors
should be connected between each supply pin and
ground, placed as close to the device as possible. A
single bypass capacitor from V+ to ground is
applicable to single-supply applications.
Time (100ms/div)
COMMON-MODE VOLTAGE RANGE
The input common-mode voltage range of the
OPAx170 series extends 100mV below the negative
rail and within 2V of the positive rail for normal
operation.
Figure 37. No Phase Reversal
Table 2. Typical Performance Range
PARAMETER
MIN
TYP
(V+) – 2
Input Common-Mode Voltage
Offset voltage
MAX
(V+) + 0.1
UNIT
V
7
mV
vs Temperature
12
µV/°C
Common-mode rejection
65
dB
Open-loop gain
60
dB
Gain-bandwidth product
0.3
MHz
Slew rate
0.3
V/µs
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): OPA170 OPA2170 OPA4170
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13
OPA170
OPA2170
OPA4170
SBOS557A – AUGUST 2011 – REVISED SEPTEMBER 2011
www.ti.com
CAPACITIVE LOAD AND STABILITY
or even the output pin. Each of these different pin
functions have electrical stress limits determined by
the voltage breakdown characteristics of the
particular semiconductor fabrication process and
specific circuits connected to the pin. Additionally,
internal electrostatic discharge (ESD) protection is
built into these circuits to protect them from
accidental ESD events both before and during
product assembly.
The dynamic characteristics of the OPAx170 have
been optimized for common operating conditions. The
combination of low closed-loop gain and high
capacitive loads decreases the phase margin of the
amplifier and can lead to gain peaking or oscillations.
As a result, heavier capacitive loads must be isolated
from the output. The simplest way to achieve this
isolation is to add a small resistor (for example, ROUT
equal to 50Ω) in series with the output. Figure 38 and
Figure 39 illustrate graphs of small-signal overshoot
versus capacitive load for several values of ROUT.
Also, refer to Applications Bulletin AB-028, Feedback
Plots Define Op Amp AC Performance (literature
number SBOA015, available for download from the TI
website), for details of analysis techniques and
application circuits.
These ESD protection diodes also provide in-circuit,
input overdrive protection, as long as the current is
limited to 10mA as stated in the Absolute Maximum
Ratings. Figure 40 shows how a series input resistor
may be added to the driven input to limit the input
current. The added resistor contributes thermal noise
at the amplifier input and its value should be kept to a
minimum in noise-sensitive applications.
V+
W
IOVERLOAD
10mA max
OPA170
VOUT
VIN
5kW
G = +1
+18V
ROUT
Figure 40. Input Current Protection
OPA170
RL
W
W
W
CL
-18V
Figure 38. Small-Signal Overshoot versus
Capacitive Load (100mV Output Step, G = +1)
W
RI = 10kW
RF = 10kW
G = -1
+18V
W
W
W
ROUT
OPA170
CL
-18V
Figure 39. Small-Signal Overshoot versus
Capacitive Load (100mV Output Step, G = –1)
ELECTRICAL OVERSTRESS
Designers often ask questions about the capability of
an operational amplifier to withstand electrical
overstress. These questions tend to focus on the
device inputs, but may involve the supply voltage pins
14
An ESD event produces a short duration,
high-voltage pulse that is transformed into a short
duration, high-current pulse as it discharges through
a semiconductor device. The ESD protection circuits
are designed to provide a current path around the
operational amplifier core to prevent it from being
damaged. The energy absorbed by the protection
circuitry is then dissipated as heat.
When the operational amplifier connects into a circuit,
the ESD protection components are intended to
remain inactive and not become involved in the
application circuit operation. However, circumstances
may arise where an applied voltage exceeds the
operating voltage range of a given pin. Should this
condition occur, there is a risk that some of the
internal ESD protection circuits may be biased on,
and conduct current. Any such current flow occurs
through ESD cells and rarely involves the absorption
device.
If there is an uncertainty about the ability of the
supply to absorb this current, external zener diodes
may be added to the supply pins. The zener voltage
must be selected such that the diode does not turn
on during normal operation. However, its zener
voltage should be low enough so that the zener diode
conducts if the supply pin begins to rise above the
safe operating supply voltage level.
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Product Folder Link(s): OPA170 OPA2170 OPA4170
PACKAGE OPTION ADDENDUM
www.ti.com
3-Oct-2011
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package
Drawing
Pins
Package Qty
Eco Plan
(2)
Lead/
Ball Finish
MSL Peak Temp
(3)
OPA170AID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
OPA170AIDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
OPA170AIDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
OPA170AIDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
OPA170AIDRLR
PREVIEW
SOT
DRL
5
4000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
OPA170AIDRLT
PREVIEW
SOT
DRL
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
OPA2170AIDGK
PREVIEW
MSOP
DGK
8
80
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
OPA2170AIDGKR
PREVIEW
MSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
OPA4170AID
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
OPA4170AIDR
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
OPA4170AIPW
PREVIEW
TSSOP
PW
14
90
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
OPA4170AIPWR
PREVIEW
TSSOP
PW
14
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
Samples
(Requires Login)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
3-Oct-2011
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
1-Oct-2011
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
OPA170AIDBVR
SOT-23
DBV
5
3000
180.0
OPA170AIDBVT
SOT-23
DBV
5
250
OPA170AIDR
SOIC
D
8
2500
OPA4170AIDR
SOIC
D
14
2500
B0
(mm)
K0
(mm)
P1
(mm)
8.4
3.23
3.17
1.37
4.0
180.0
8.4
3.23
3.17
1.37
330.0
12.4
6.4
5.2
2.1
330.0
16.4
6.5
9.0
2.1
Pack Materials-Page 1
W
Pin1
(mm) Quadrant
8.0
Q3
4.0
8.0
Q3
8.0
12.0
Q1
8.0
16.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
1-Oct-2011
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
OPA170AIDBVR
SOT-23
DBV
5
3000
202.0
201.0
28.0
OPA170AIDBVT
SOT-23
DBV
5
250
202.0
201.0
28.0
OPA170AIDR
SOIC
D
8
2500
346.0
346.0
29.0
OPA4170AIDR
SOIC
D
14
2500
346.0
346.0
33.0
Pack Materials-Page 2
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