DC COMPONENTS CO., LTD. R MPSA92M DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use as a video output to drive color CRT, or as a dialer circuit in electronic telephone. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -300 - - V IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO -300 - - V IC=-1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10µA, IC=0 ICEO - - -5 µA VCE=-300V, IB=0 Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width Test Conditions IEBO - - -0.1 µA VEB=-3V, IC=0 VCE(sat)1 - -0.15 - V IC=-30mA, IB=-1mA VCE(sat)2 - - -0.7 V IC=-100mA, IB=-10mA VBE(sat)1 - - -0.9 V IC=-20mA, IB=-2mA VBE(sat)2 - - -1 V IC=-100mA, IB=-10mA hFE1 80 - - - IC=-10mA, VCE=-10V hFE2 80 - - - IC=-100mA, VCE=-10V hFE3 40 - - - IC=-200mA, VCE=-10V 50 - - MHz fT 380µs, Duty Cycle 2% IC=-10mA, VCE=-20V, f=100MHz