DC COMPONENTS CO., LTD. R BF423 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for video B-class power stages in TV receivers. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -250 V Collector-Emitter Voltage VCEO -250 V Emitter-Base Voltage VEBO -5 V Collector Current IC -50 mA Total Power Dissipation PD 830 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -250 - - V IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO -250 - - V IC=-1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10µA, IC=0 ICBO - - -0.1 µA VCB=-200V, IE=0 Collector Cutoff Current Emitter Cutoff Current (1) Collector-Emitter Saturation Voltage DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width Test Conditions IEBO - - -10 µA VEB=-5V, IC=0 VCE(sat) - - -0.6 V IC=-30mA, IB=-3mA hFE 50 - - - IC=-25mA, VCE=-20V 60 - - MHz fT 380µs, Duty Cycle 2% IE=-10mA, VCE=-10V, f=100MHz