DYNEX GP350MHB06S

GP350MHB06S
GP350MHB06S
Half Bridge IGBT Module
Replaces January 2000 version, DS4923-4.0
FEATURES
DS4923-5.0 October 2001
KEY PARAMETERS
■
n - Channel
VCES
■
High Switching Speed
VCE(sat)
(typ)
2.0V
■
Low Forward Voltage Drop
(max)
500A
Isolated Base
IC25
■
IC75
(max)
350A
IC(PK)
(max)
1000A
APPLICATIONS
■
PWM Motor Control
■
UPS
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The GP350MHB06S is a half bridge 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
600V
6(G2)
11(C2)
7(E2)
3(C1)
2(E2)
1(E1C2)
5(E1)
9(C1)
4(G1)
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
Fig. 1 Half bridge circuit diagram
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
ORDERING INFORMATION
Order as: GP350MHB06S
Note; When ordering, use complete part number.
11
10
1
2
3
8
9
6
7
5
4
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10
GP350MHB06S
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Max.
Units
600
V
±20
V
DC, Tcase = 25˚C
500
A
DC, Tcase = 75˚C
350
A
1ms, Tcase = 25˚C
1000
A
1ms, Tcase = 75˚C
700
A
Parameter
Collector current
IC(PK)
Test Conditions
VGE = 0V
-
Pmax
Maximum power dissipation
(Transistor)
1750
W
Visol
Isolation voltage
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
2500
V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Conditions
Min.
Max.
-
70
o
-
160
o
o
Units
Rth(j-c)
Thermal resistance - transistor
DC junction to case per arm
Rth(j-c)
Thermal resistance - diode
DC junction to case
Rth(c-h)
Thermal resistance - Case to heatsink (per module) Mounting torque 5Nm (with mounting grease)
-
15
Junction temperature
Transistor
-
150
o
Diode
-
125
o
- 40
125
o
Mounting - M6
-
5
Nm
Electrical connections - M6
-
5
Nm
Tj
Tstg
-
2/10
Storage temperature range
Screw torque
-
-
C/kW
C/kW
C/kW
C
C
C
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
GP350MHB06S
ELECTRICAL CHARACTERISTICS
Tj = 25˚C unless stated otherwise.
Symbol
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
2
mA
VGE = 0V, VCE = VCES, Tj = 125˚C
-
-
-
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
±1
µA
VGE(TH)
Gate threshold voltage
IC = 10mA, VGE = VCE
4
-
7.5
V
2.0
2.6
V
Collector-emitter saturation voltage
VGE = 15V, IC = 350A
-
VCE(SAT)
VGE = 15V, IC = 350A, Tj = 125˚C
-
2.2
2.8
V
ICES
IGES
Parameter
Collector cut-off current
Conditions
IF
Diode forward current
DC
-
-
215
A
IFM
Diode maximum forward current
tp = 1ms
-
-
700
A
VF
Diode forward voltage
IF = 350A,
-
1.51
2.31
V
IF = 350A, Tj = 125˚C
-
1.5
2.3
V
VCE = 25V, VGE = 0V, f = 1MHz
-
22500
-
pF
Cies
Input capacitance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
3/10
GP350MHB06S
INDUCTIVE SWITCHING CHARACTERISTICS
Tj = 25˚C unless stated otherwise
Symbol
td(off)
tf
EOFF
Parameter
Conditions
Min.
Typ.
Max.
Units
-
730
-
ns
IC = 350A
-
250
-
ns
VGE = ±15V
-
26
-
mJ
-
320
-
ns
-
150
-
ns
-
10
-
mJ
IF = 350A
-
190
-
ns
VR = 50%VCES, dIF/dt = 1000A/µs
-
12
-
µC
-
910
-
ns
IC = 350A
-
490
-
ns
VGE = ±15V
-
40
-
mJ
-
380
-
ns
-
250
-
ns
-
35
-
mJ
IF = 350A
-
280
-
ns
VR = 50%VCES, dIF/dt = 1000A/µs
-
18
-
µC
Turn-off delay time
Fall time
Turn-off energy loss
VCE = 50% VCES
td(on)
tr
EON
Turn-on delay time
RG(ON) = RG(OFF) = 5Ω
L ~ 100nH
Rise time
Turn-on energy loss
trr
Diode reverse recovery time
Qrr
Diode reverse recovery charge
Tj = 125˚C unless stated otherwise.
td(off)
tf
EOFF
Turn-off delay time
Fall time
Turn-off energy loss
VCE = 50% VCES
td(on)
tr
EON
Turn-on delay time
L ~ 100nH
Rise time
Turn-on energy loss
trr
Diode reverse recovery time
Qrr
Diode reverse recovery charge
4/10
RG(ON) = RG(OFF) = 5Ω
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
GP350MHB06S
TYPICAL CHARACTERISTICS
Vge = 20/15/12/10V
450
Vge = 20/15/12/10V
450
350
350
Collector current, Ic - (A)
Common emitter
400 Tcase = 125˚C
Collector current, Ic - (A)
Common emitter
400 Tcase = 25˚C
300
250
200
150
300
250
200
150
100
100
50
50
0
0
0.5
1.0
1.5
2.0
2.5
Collector-emitter voltage, Vce - (V)
0
0.5
3.0
Fig.3 Typical output characteristics
45
Tj = 25˚C
VGE = ±15V
VCE = 300V
Tj = 125˚C
V
GE = ±15V
40
VCE = 300V
A
A
35
14
Turn-on energy, EON - (mJ)
Turn-on energy, EON - (mJ)
16
B
12
10
C
8
6
B
30
25
C
20
15
10
4
2
0
0
3.5
Fig.4 Typical output characteristics
20
18
1.0
1.5
2.0
2.5
3.0
Collector-emitter voltage, Vce - (V)
50
200
250
100
150
Collector current, IC - (A)
A: Rg = 15Ω
B: Rg = 10Ω
C: Rg = 5Ω
5
300
0
0
Fig.5 Typical turn-on energy vs collector current
350
A: Rg = 15Ω
B: Rg = 10Ω
C: Rg = 5Ω
50
100
150
200
250
Collector current, IC - (A)
350
Fig.6 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
300
5/10
GP350MHB06S
30
40
A
B
20
15
10
5
0
0
50
15
10
0
0
350
A: Rg = 15Ω
B: Rg = 10Ω
C: Rg = 5Ω
50
100
150
200
250
Collector current, IC - (A)
300
350
Fig.8 Typical turn-off energy vs collector current
3.5
Rg = 5Ω
Tj = 25˚C
VGE = ±15V
3.0 VCE = 300V
Rg = 10Ω
2.5
2.0
Rg = 15Ω
1.5
1.0
0.5
50
100
150
200
250
Collector current, IC - (A)
300
350
Fig.9 Typical diode turn-off energy vs collector current
Diode turn-off energy, EOFF(diode) - (mJ)
Diode turn-off energy, EOFF(diode) - (mJ)
20
300
3.5
6/10
C
25
5
Fig.7 Typical turn-off energy vs collector current
0
0
A
B
30
A: Rg = 15Ω
B: Rg = 10Ω
C: Rg = 5Ω
100
150
200
250
Collector current, IC - (A)
Tj = 125˚C
VGE = ±15V
VCE = 300V
35
C
Turn-off energy, EOFF - (mJ)
Turn-off energy, EOFF - (mJ)
25
45
Tj = 25˚C
VGE = ±15V
VCE = 300V
3.0
Tj = 125˚C
VGE = ±15V
VCE = 300V
Rg = 5Ω
Rg = 10Ω
2.5
Rg = 15Ω
2.0
1.5
1.0
0.5
0
0
50
100
150
200
250
Collector current, IC - (A)
300
350
Fig.10 Typical diode turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
GP350MHB06S
450
1400
1200
Tj = 125˚C
VGE = ±15V
VCE = 300V
Rg = 5Ω
td(off)
400
350
Foward current, IF - (A)
Switching times, - (ns)
1000
300
800
250
Tj = 125˚C
200
600
Tj = 25˚C
150
400
td(on)
tf
100
200
50
tr
0
0
50
250
100
150
200
Collector current, IC - (A)
300
0
350
0
Fig.11 Typical switching characteristics
0.2
0.4
0.6 0.8 1.0 1.2 1.4
Foward voltage, VF - (V)
1.6
1.8
Fig.12 Diode typical forward characteristics
700
10000
1000
500
Collector current, IC - (A)
Collector current, IC - (A)
600
400
300
200
IC max. (single pulse)
50µs
IC
100
100µs
m
tp = 1ms
ax
.D
C
(c
on
tin
uo
us
)
10
100
0
0
Tj = 125˚C
Vge = ±15V
Rg = 5Ω
600
200
400
Collector-emitter voltage, Vce - (V)
Fig.13 Reverse bias safe operating area
800
1
1
10
100
Collector-emitter voltage, Vce - (V)
Fig.14 Forward bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1000
7/10
GP350MHB06S
Transient thermal impedance, Zth (j-c) - (°C/kW )
1000
Diode
100
Transistor
10
1
0.001
0.01
0.1
Pulse width, tp - (s)
1
10
Fig.15 Transient thermal impedance
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
GP350MHB06S
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
28 ± 0.5
28 ± 0.5
6
62 ± 0.8
48 ± 0.3
11
1
10
2
3
7
4x Fast on
tabs
8
5
9
4
93 ± 0.3
3x M6
23
38max
8
106 ± 0.8
108 ± 0.8
Nominal weight: 270g
Recommeded fixings for mounting: M6
Recommended mounting torque: 5Nm (44lbs.ins)
Recommended torque for electrical connections (M6): 5Nm (44lbs.ins)
Module outline type code: M
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
9/10
GP350MHB06S
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4923-5 Issue No. 5.0 October 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
10/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com