e PTB 20151 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 45 Watts, 1.8–2.0 GHz Class AB Characteristics 40% Collector Efficiency at 45 W Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 70 60 50 201 51 40 LOT 30 COD E VCC = 26 V 20 ICQ = 100 mA f = 2.0 GHz 10 0 0 1 2 3 4 5 6 7 8 9 Input Power (Watts) Package 20223 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 7.7 Adc Total Device Dissipation at Tflange = 25° C PD 200 Watts 1.2 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70° C) RθJC 0.85 °C/W 1 9/28/98 e PTB 20151 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(BR)CES 50 — — Volts Breakdown Voltage C to E IB = 0 A, IC = 100 mA, RBE = 22 Ω V(BR)CER 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4.0 5.0 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 40 — — Symbol Min Typ Max Units Gain (VCC = 26 Vdc, POUT = 10 W, ICQ = 100 mA, f = 2 GHz) Gpe 8.0 9.5 — dB Power Output at 1 dB Compression (VCC = 26 Vdc, POUT = 45 W, ICQ = 100 mA, f = 2 GHz) P-1dB 45.0 — — Watts Collector Efficiency (VCC = 26 Vdc, POUT = 45 W, ICQ = 100 mA, f = 2 GHz) ηC 40 47 — % Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VCC = 26 Vdc, POUT = 22.5 W, ICQ = 100 mA, f = 2 GHz—all phase angles at frequency of test) Typical Performance Output Power (W) Gain 11 60 10 50 Efficiency (%) 9 40 Gain (dB) VCC = 26 V 8 7 1750 ICQ = 100 mA 1800 1850 1900 1950 2000 30 20 2050 50 8 Efficiency (%) 6 VCC = 26 V POUT = 45 W -15 20 Return Loss (dB) 0 1900 1925 1950 1975 Frequency (MHz) 2 40 - 30 5 ICQ = 100 mA 4 2 Frequency (MHz) 5/4/98 60 Gain (dB) Gain (dB) 70 Output Power & Efficiency 12 Broadband Test Fixture Performance 10 -25 10 -35 0 2000 Return Loss (dB) Efficiency (%) POUT, Gain & Efficiency (at P-1dB) vs. Frequency e PTB 20151 Intermodulation Distortion vs. Power Output -32 65 -34 60 IMD (dBc) Output Power (Watts) Output Power vs. Supply Voltage 70 55 ICQ = 100 mA f = 2.0 GHz 50 -36 VCC = 26 V -38 ICQ = 60 mA f1 = 1.999 GHz -40 45 f2 = 1.998 GHz -42 40 22 23 24 25 26 0 27 10 20 30 40 50 Output Power (Watts-PEP) Supply Voltage (Volts) Power Gain vs. Output Power 12 Power Gain (dB) 11 10 ICQ = 100 mA 9 ICQ = 50 mA 8 ICQ = 25 mA VCC = 26 V f = 2.0 GHz 7 6 0.1 1.0 10.0 100.0 Output Power (Watts) Impedance Data (VCC = 26 Vdc, POUT = 45 W, ICQ = 100 mA) Z Source Z Load Frequency Z Source GHz R jX R jX 1.75 3.15 -1.7 3.3 -0.8 1.80 3.10 -2.7 4.1 -1.2 1.85 3.50 -3.1 4.3 -1.5 1.90 3.70 -2.9 3.3 -1.3 1.95 3.90 -2.7 2.6 -1.1 2.00 4.10 -2.1 2.4 -0.9 2.05 3.75 -1.0 2.3 -0.7 3 5/11/98 Z Load e PTB 20151 Z0 = 10 Ω Test Circuit Artwork (1 inch ) Parts Layout (not to scale) 4 5/4/98 e PTB 20151 * Thermally linked to RF device. Schematic for f = 2 GHz Q1 PTB 20151 NPN RF Transistor l1, l9 Microstrip 50 Ω l2 .1 λ 2 GHz Microstrip 75 Ω l3 .065 λ 2 GHz Microstrip 16 Ω l4 .095 λ 2 GHz Microstrip 12.5 Ω l5 .055 λ 2 GHz Microstrip 9.7 Ω l6 .055 λ 2 GHz Microstrip 12.5 Ω l7 .065 λ 2 GHz Microstrip 22 Ω C1, C6 0.1 µF 1206 Chip C2, C7 10 µF, 35 V SMT Tantalum C3, C4, C8, C10 20 pF ATC-100 C5, C9 0–4 pf Johanson Trimmer Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 L1 L2, L4 L3 R1 Board 56 nh SMT Inductor 3 Turn #22, 0.25” O.D. 4 mm. SMT Ferrite 22 Ω 1206 SMT Resistor 0.031 G-200 Solid Copper Bottom, AlliedSignal Bias Parts (not shown on layout) Q2 BCP 56 D1 BAV 99 C10, C11 0.1 pF R2 2K R3, R4 10 Ω 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 5 SMT NPN Transistor Diode SMT Capacitor Potentiometer 1206 SMT Resistor Specifications subject to change without notice. L3 © 1996 Ericsson Inc. EUS/KR 1301-PTB 20151 Uen Rev. C 09-28-98