e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in Wide CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. • 35 Watts, 2.1–2.2 GHz • Class AB Characteristics • Gold Metallization • Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 60 50 40 202 45 LOT 30 20 VCC = 26 V 10 ICQ = 100 mA f = 2000 MHz COD E 0 0 2 4 6 8 10 12 Input Power (Watts) Package 20223 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 55 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage (collector open) VEBO 3.5 Vdc Collector Current (continuous) IC 7.7 Adc Total Device Dissipation at Tflange = 25° C PD 200 Watts 1.2 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70° C) RθJC 0.85 °C/W 1 9/28/98 e PTB 20245 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E VBE = 0 V, IC = 20 mA V(BR)CES 55 — — Volts Breakdown Voltage C to E IB = 0 A, IC = 20 mA, RBE = 22 Ω V(BR)CER 55 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 4.0 — Volts DC Current Gain VCE = 10 V, IC = 1.5 A hFE 30 40 — — Symbol Min Typ Max Units Gpe 7.5 8.5 — dB P–1dB 35.0 — — Watts ηC — 40 — % Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 10 W, ICQ = 85 mA, f = 2.2 GHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 85 mA, f = 2.2 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 35 W, ICQ = 85 mA, f = 2.2 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 17.5 W, ICQ = 85 mA f = 2.2 GHz—all phase angles at frequency of test) 55 Gain (dB) 11 50 45 10 VCC = 26 V 9 8 Efficiency (%) ICQ = 250 mA 40 35 30 Gain (dB) 7 2050 25 2100 2150 2200 20 2250 50 8 Efficiency (%) 40 6 VCC = 26 V - 30 5 ICQ = 85 mA Pout = 35 W -15 20 4 2 2100 Frequency (MHz) Return Loss (dB) 2120 2140 2160 Frequency (MHz) 2 4/3/98 60 Gain (dB) Gain (dB) 60 Output Power (W) Output Power & Efficiency 12 Broadband Test Fixture Performance 10 2180 -25 10 -35 0 2200 Return Loss (dB) Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Efficiency (%) Typical Performance e PTB 20245 Power Gain vs. Output Power 10 55 9 Power Gain (dB) Output Power (Watts) Output Power vs. Supply Voltage 60 50 45 ICQ = 85 mA f = 2200 MHz 40 35 ICQ = 85 mA ICQ = 43 mA 8 ICQ = 21 mA 7 VCC = 26 V f = 2200 MHz 6 5 30 22 23 24 25 26 0 27 1 Supply Voltage (Volts) 10 100 Output Power (Watts) Intermodulation Distortion vs. Power Output -20 VCC = 26 V IMD (dBc) -25 ICQ = 85 mA f1 = 2.199 GHz f2 = 2.200 GHz -30 -35 -40 5 10 15 20 25 30 35 40 Output Power (Watts-PEP) Impedance Data (VCC = 26 Vdc, Pout = 35 W, ICQ = 85 mA) Z Source Frequency Z Load Z Source Z Load GHz R jX R jX 2.05 3.09 –3.35 3.20 –2.90 2.10 3.79 –3.45 2.95 –2.50 2.15 4.38 –3.10 2.75 –2.05 2.20 4.58 –2.40 2.50 –1.50 2.25 3.98 –1.80 2.40 –1.30 3 4/3/98 Z0 = 10 Ω e PTB 20245 Test Circuit * Thermally linked to RF device. Schematic for f = 2.2 GHz Q1 PTB 20245 NPN RF Transistor l1, l9 Microstrip 50 Ω l2 .1 λ 2 GHz Microstrip 75 Ω l3 .065 λ 2 GHz Microstrip 16 Ω l4 .095 λ 2 GHz Microstrip 12.5 Ω l5 .055 λ 2 GHz Microstrip 9.7 Ω l6 .055 λ 2 GHz Microstrip 12.5 Ω l7 .065 λ 2 GHz Microstrip 22 Ω C1, C6 0.1 µF 1206 Chip C2, C7 10 µF, 35 V SMT Tantalum C3, C4, C8, C10 20 pF ATC-100 C5, C9 0–4 pf Johanson Trimmer L1 L2, L4 L3 R1 Board Bias Parts (not shown on layout) Q2 BCP 56 D1 BAV 99 C10, C11 0.1 pF R2 2K R3, R4 10 Ω Parts Layout (not to scale) 4 5/20/98 56 nh SMT Inductor 3 Turn #22, 0.25” O.D. 4 mm. SMT Ferrite 22 Ω 1206 SMT Resistor 0.031 G-200 Solid Copper Bottom, AlliedSignal SMT NPN Transistor Diode SMT Capacitor Potentiometer 1206 SMT Resistor e Artwork (1 inch Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 PTB 20245 ) 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 5 9/16/98 Specifications subject to change without notice. L3 © 1997 Ericsson Inc. EUS/KR 1301-PTB 20245 Uen Rev. A 09-28-98