PTF 10107 5 Watts, 2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min • Full Gold Metallization • Silicon Nitride Passivated • Back Side Common Source • Excellent Thermal Stability • 100% Lot Traceability Typical Output Power & Efficiency vs. Input Power Output Power (Watts) 7 Output Pow er 80 6 Efficiency 5 60 4 VDD = 26 V IDQ = 70 mA f = 2.0 GHz 3 2 1 0 0.0 0.1 0.2 0.3 0.4 40 20 Efficiency (%) X 100 8 101 234 07 569 A-1 845 0 0.5 Input Power (Watts) Package 20244 RF Specifications (100% Tested) Characteristic Gain (VDD = 26 V, POUT = 1 W, IDQ = 70 mA, f = 1.93, 1.99 GHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 70 mA, f = 1.99 GHz) Drain Efficiency (VDD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.99 GHz —all phase angles at frequency of test) Symbol Min Typ Max Units Gps 11 — — dB P-1dB 5 6.5 — Watts hD 40 — — % Y — — 10:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10107 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 20 mA V(BR)DSS 65 — — Volts Zero Gate Voltage Drain Current VDS = 26 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 2 A gfs — 0.8 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation at PD 39 Watts 0.22 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 4.5 °C/W Typical Performance POUT, Gain & Efficiency (at P-1dB) vs. Frequency 11 9 Efficiency (%) VDD = 26 V IDQ = 70 mA 45 10 25 Output Pow er 1800 1850 1900 1950 2000 50 Efficiency (%) 40 8 VCC = 26 V - 30 5 6 IDQ = 70 mA POUT = 4 W -15 20 4 10 -25 Return Loss (dB) 15 2050 2 1925 Frequency (MHz) 1950 1975 Frequency (MHz) 2 0 -35 2000 Efficiency 12 35 7 5 1750 55 60 Gain (dB) Return Loss Gain (dB) 14 Gain 13 Broadband Test Fixture Performance 65 Efficiency Gain & Output Power x 15 e PTF 10107 Intermodulation Distortion vs. Output Power Output Power vs. Supply Voltage 0 VDD = 26 V IDQ = 70 mA -10 8 IMD (dBc) 6 4 f1 = 1999.9 MHz f2 = 2000.0 MHz -30 IM5 -40 IM7 -60 0 -70 22 24 26 28 30 0 1 2 3 4 5 6 Power Gain vs. Output Power Capacitance vs. Supply Voltage 14 18 6 IDQ = 70 mA 13 VGS = 0 V f = 1 MHz Cds and Cgs (pF) x 15 IDQ = 40 mA 12 Cgs 12 11 5 4 9 IDQ = 20 mA 10 3 Cds 6 VDD = 26 V f = 2.0 GHz 9 2 3 8 1 Crss 0 1.0 10.0 0 0 10 20 30 Supply Voltage (Volts) Output Power (Watts) Bias Voltage vs. Temperature 1.03 Voltage normalized to 1.0 V Series show current (A) 1.02 Bias Voltage (V) 0.1 7 Output Power (Watts-PEP) Supply Voltage (Volts) Power Gain (dB) IM3 -50 IDQ = 70 mA f = 2.0 GHz 2 -20 1.01 0.05 1 0.145 0.99 0.24 0.98 0.335 0.43 0.97 0.525 0.96 -20 30 80 Temp. (°C) 3 130 40 Crss (pF) Output Power (Watts) 10 e PTF 10107 Impedance Data Z0 = 50 W VDD = 26 V, POUT = 5 W, IDQ = 70 mA D Z Source Z Load G S Z Source W Frequency Z Load W GHz R jX R jX 1.75 3.2 -1.7 6.20 2.4 1.80 3.4 -2.0 6.80 1.7 1.85 3.4 -2.4 7.10 0.9 1.90 3.7 -3.1 7.05 0.5 1.95 3.5 -3.8 7.00 0.0 2.00 3.0 -4.1 6.70 -0.4 2.05 2.7 -4.6 6.00 -0.8 Typical Scattering Parameters (VDS = 26 V, ID = 300 mA) f (MHz) S11 Mag 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 0.874 0.837 0.844 0.850 0.858 0.864 0.868 0.870 0.879 0.887 0.898 0.905 0.911 0.914 0.916 0.918 0.923 0.928 0.933 0.937 0.935 0.934 S21 Ang -58 -70 -100 -118 -130 -139 -146 -153 -158 -162 -167 -171 -174 -178 179 176 173 171 168 165 162 159 Mag 24.1 21.8 17.5 14.1 11.5 9.44 7.86 6.61 5.65 4.86 4.24 3.73 3.30 2.92 2.61 2.35 2.14 1.95 1.79 1.65 1.53 1.43 S12 S22 Ang Mag Ang Mag 137 129 106 89 77 66 56 48 40 33 26 20 14 8 2 -3 -8 -13 -18 -23 -28 -33 0.009 0.010 0.012 0.013 0.012 0.011 0.009 0.008 0.006 0.004 0.004 0.004 0.005 0.006 0.008 0.009 0.011 0.013 0.015 0.017 0.018 0.020 46 37 21 9 -1 -8 -13 -15 -13 -2 19 48 66 74 77 79 79 78 76 74 71 68 0.770 0.737 0.710 0.709 0.723 0.749 0.767 0.782 0.801 0.815 0.837 0.854 0.870 0.882 0.892 0.898 0.907 0.914 0.920 0.925 0.929 0.934 4 Ang -35 -42 -62 -77 -88 -98 -108 -116 -123 -130 -136 -141 -147 -152 -156 -160 -164 -168 -172 -176 -179 178 e PTF 10107 Test Circuit Block Diagram for f = 1.96 GHz DUT l1 l2 l3 l4 l5 l6 PTF 10107 0.303 l 1.99 GHz 0.146 l 1.99 GHz 0.076 l 1.99 GHz 0.072 l 1.99 GHz 0.060 l 1.99 GHz 0.352 l 1.99 GHz LDMOS RF FET Microstrip 50 W Microstrip 11.6 W Microstrip 17.7 W Microstrip 13.5 W Microstrip 17.7 W Microstrip 50 W C1 C2, C3, C6, C9 C4, C10 C5 C7 C8 J1, J2 L1 L2 R1, R2 Circuit Board 5 Capacitor, 0.1 µF Digi-Key P4525-ND Capacitor, 33 pF ATC 100 B Capacitor, 0.5 pF ATC 100 B Capacitor, 1.1 pF ATC 100 B Capacitor, 0.1 µF 50 V Digi-Key Capacitor, 100 µF, 50 V Digi-Key P5182-ND Connector, SMA, Female, Panel Mount Chip Inductor, 2.7 µH Digi-Key LL2012-F2N7K 3 Turns, 20 AWG, .120 I. D. N/A Resistor, 220 ohm, 1/4W Digi-Key QBK-ND 0.031" Thick, er = 4.0, 2 0z copper, G200 AlliedSignal e PTF 10107 Artwork (not to scale) Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L3 © 1998, 1999, 2000, 2001 Ericsson Inc. EUS/KR 1522-PTF 10107 Uen Rev. B 01-04-01