PTF 10009 85 Watts, 1.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 50% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.0 dB Typ - Efficiency = 50% Typ • Full Gold Metallization • Silicon Nitride Passivated • Excellent Thermal Stability • 100% lot traceability Typical Output Power and Efficiency vs. Input Power 100 80 Output Power (W) 72 80 70 64 56 60 48 Efficiency (%) 50 40 40 32 VDS = 28 V 30 20 24 16 IDQ = 600 mA Total f = 960 MHz 10 Efficiency Output Power 90 1000 1234 5697 9 44 8 0 0 0.0 1.0 2.0 3.0 4.0 5.0 Input Power (Watts) Package 20230 Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage (1) VDSS 65 Vdc Gate-Source Voltage (1) VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 270 Watts 1.54 W/°C Above 25°C derate by Storage Temperature Range TSTG -65 to 150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.65 °C/W (1)per side All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10009 Electrical Characteristics Characteristic (per side) (100% Tested—characteristics, conditions and limits shown per side) Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Symbol Min Typ Max Units V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 3 A gfs — 2.8 — Siemens Symbol Min Typ Max Units Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Ciss — 90 — pF Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Coss — 36 — pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Crss — 1.9 — pF Symbol Min Typ Max Units Gain (VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz) Gps 12.0 13.0 — dB Drain Efficiency (VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz) h 47 50 — % Y — — 5:1 — Dynamic Characteristics Characteristic (per side) RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz— all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VDD = 28 V, Pout = 85 W, IDQ = 600 mA) Z Source D Z Load S G G D Z Source W Frequency Z Load W MHz R jX R jX 860 1.76 -0.78 5.00 -1.50 900 1.80 -0.05 4.80 -0.78 960 1.58 0.69 4.24 0.36 1000 1.39 1.35 3.95 1.41 2 Z0 = 50 W e PTF 10009 Typical Performance Intermodulation Distortion vs. Output Power Gain vs. Power Output -10 20.0 VDS = 28V 17.5 -30 12.5 -50 5.0 0 20 40 60 80 -60 100 0 20 Output Power (Watts) 40 60 80 100 Output Power (Watts-PEP) Gain vs. Frequency Output Power vs. Drain-Source Voltage (as measured in a broadband circuit) 100 14 95 90 13 Gain (dB) 85 80 75 IDQ = 600 mA Total f = 960 MHz 70 22 24 26 28 30 32 12 VDS = 28 V IDQ = 600 mA Total Pout = 85 W 11 65 10 900 34 910 920 Bias Voltage vs. Temperature 1.03 Voltage normalized to 1.0 V Series show current (A) 1.02 1.01 1.00 0.43 0.99 1.25 0.98 2.08 0.97 2.9 3.71 0.96 4.53 0.95 -20 930 940 Frequency (MHz) Drain-Source Voltage (Volts) Bias Voltage (V) Output Power (Watts) 5th 7th IDQ = 600mA Total f = 960 MHz 7.5 f2 = 960.1 MHz -40 VDS = 28 V 10.0 3rd Order f1 = 960.0 MHz IMD (dBc) 15.0 Gain (dB) IDQ = 600 mA Total -20 30 80 Temp. (°C) 3 130 950 960 e PTF 10009 Typical Scattering Parameters (VDS = 28 V, ID = 1.0 A per side) f (MHz) Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag Ang 40 60 80 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 0.883 0.878 0.876 0.884 0.904 0.915 0.934 0.947 0.962 0.975 0.974 0.977 0.979 0.985 0.981 0.980 0.975 0.973 0.972 0.969 0.966 0.969 0.969 0.970 0.970 0.970 0.971 0.971 0.973 0.973 0.972 0.965 -153 -160 -163 -164 -165 -165 -164 -164 -163 -163 -163 -163 -164 -164 -165 -166 -167 -168 -170 -171 -173 -174 -176 -177 -178 -179 180 179 179 179 179 179 33.0 21.8 16.1 12.8 8.21 5.67 4.36 3.41 2.78 2.30 1.90 1.65 1.44 1.28 1.14 1.01 0.924 0.809 0.749 0.656 0.609 0.564 0.526 0.450 0.405 0.383 0.351 0.330 0.308 0.255 0.219 0.210 93 85 80 76 65 58 51 45 41 36 33 30 27 26 22 21 19 16 14 12 14 8 3 6 1 4 -5 -5 -5 -3 5 -8 0.014 0.013 0.012 0.012 0.011 0.010 0.010 0.010 0.008 0.008 0.006 0.006 0.005 0.004 0.003 0.004 0.003 0.001 0.003 0.003 0.002 0.003 0.004 0.004 0.005 0.005 0.005 0.005 0.005 0.006 0.006 0.006 3 1 -6 -13 -18 -23 -31 -31 -28 -33 -36 -52 -46 -53 -27 -18 -13 14 -1 30 53 59 56 69 57 65 56 61 52 59 58 62 0.527 0.533 0.553 0.574 0.638 0.694 0.769 0.792 0.837 0.873 0.874 0.912 0.916 0.925 0.933 0.933 0.936 0.946 0.939 0.946 0.948 0.945 0.949 0.955 0.953 0.952 0.959 0.957 0.963 0.965 0.965 0.957 -143 -148 -150 -148 -148 -149 -148 -149 -150 -151 -151 -152 -154 -154 -156 -157 -158 -160 -160 -162 -164 -164 -167 -167 -168 -169 -170 -170 -171 -171 -171 -172 4 S22 e PTF 10009 Test Circuit Schematic for f = 960 MHz DUT C1-2, C5-6, C9, C12-13, C17 C3 C4 C7, C10 C8, C11, C14, C18 C15, C16, C19, C20 L1. L2 R1, R2, R4, R5 R3, R6 l1, l22 10009 33 pF, Capacitor ATC 100 B 11 pF, Capacitor ATC 100 B 6.0 pF, Variable Capacitor, JMC 5701 10 mF, +10 V Electrolytic Capacitor 0.01 mF, Capacitor ATC 100 B 10 mF, +30 V Electrolytic Capacitor 4 Turn, #20 AWG, .120” I.D. 1.0 K, W Resistor 5.1 K, 1/4 W Resistor 50 W, .030 l Parts Layout (not to scale) 5 l2, l21 l3, l20 l4, l19 l5, l6 l7, l10 l8, l9 l11, l12 l13, l14 l15, l16 l17, l18 Circuit Board 20 W, .080 l 32 W, .191 l 25 W, .500 l 25 W, .091 l 7 W, .056 l 13.0 W, .017 l 13.0 W, .017 l 7.0 W, .064 l 10.0 W, .029 l 19.0 W, .028 l .031" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper e PTF 10009 Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. LF © 1997 Ericsson Inc. EUS/KR 1301-PTF 10009 Uen Rev. B 02-16-00