2SA1484 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1484 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –90 V Collector to emitter voltage VCEO –90 V Emitter to base voltage VEBO –5 V Collector current IC –100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –90 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage –90 — — V I C = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –0.1 µA VCB = –70 V, IE = 0 Emitter cutoff current I EBO — — –0.1 µA VEB = –2 V, IC = 0 250 — 800 1 VCE = –12 V, IC = –2 mA*2 DC current transfer ratio hFE* Collector to emitter saturation voltage VCE(sat) — — –0.15 V I C = –10 mA, IB = –1 mA*2 Base to emitter saturation voltage VBE(sat) — — –1.0 V I C = –10 mA, IB = –1 mA*2 Notes: 1. The 2SA1484 is grouped by h FE as follows. 2. Pulse test Grade D E Mark IRD IRE hFE 250 to 500 400 to 800 2 2SA1484 Typical Output Characteristics (1) –20 150 100 50 5 –2 –20 –12 –8 –10 –5 µA –4 IB = 0 0 0 50 100 150 Ambient Temperature Ta (°C) –20 –40 –60 –80 –100 Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) –8 –6 PC = 150 mW –20 –18 –16 –14 –12 –10 –4 –8 –6 –2 –4 –2 µA IB = 0 0 Typical Transfer Characteristics –100 –4 –8 –12 –16 –20 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) –10 Collector Current IC (mA) –15 mW 50 =1 Collector Current IC (mA) 0 –3 –16 PC Collector power dissipation Pc (mW) Maximum Collector Dissipation Curve VCE = –6 V Pulse –10 75 25 –1.0 Ta = –25°C –0.1 0 –0.2 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) 3 2SA1484 Collector Cutoff Current vs. Collector to Emitter Voltage Collector Cutoff Current vs. Collector to Base Voltage –1,000 IE = 0 Pulse –1,000 Ta = 75°C 25 –100 –25 –10 Collector cutoff current ICEO (nA) Collector cutoff current ICBO (pA) –10.000 0 25 –25 –1.0 0 IC = 0 Pulse Ta = 75°C –10 25 –1.0 –25 –0.1 –2 –4 –6 –8 –10 Emitter to Base Voltage VEB (V) Collector to emitter breakdown voltage V(BR) CER (mA) Emitter cutoff current IEBO (pA) –1,000 4 Ta = 75°C –10 –20 –40 –60 –80 –100 Collector to Base Voltage VCB (V) Emitter Cutoff Current vs. Emitter to Base Voltage 0 –100 –0.1 –1 –100 RBE = ∞ Pulse –20 –40 –60 –80 –100 Collector to Emitter Voltage VCE (V) Collector to Emitter Breakdown Voltage vs. Base to Emitter Resistance –190 Typical Value IC = –1 mA –180 –170 –160 –150 –140 10 100 1k 10 k 100 k Base to Emitter Resistance RBE (Ω) 2SA1484 Collector to Emitter Saturation Voltage vs. Collector Current –1.0 IC = 10 IB Pulse DC Current Transfer Ratio vs. Collector Current Collector to emitter saturation voltage VCE (sat) (V) 1,000 300 25 –25 100 30 VCE = –12 V Pulse 10 –1 –3 –10 –30 Collector Current IC (mA) –100 –0.3 –0.1 Ta = 75°C –25 25 –0.03 –0.01 –1 –3 –10 –30 Collector Current IC (mA) –100 Base to Emitter Saturation Voltage vs. Collector Current –10 Base to emitter saturation voltage VBE (sat) (V) DC current transfer ratio hFE Ta = 75°C IC = 10 IB Pulse –3 –1.0 25 Ta = –25°C 75 –0.3 –0.1 –1 –3 –10 –30 Collector Current IC (mA) –100 5 0.65 Unit: mm 0.95 0.95 1.9 ± 0.2 + 0.10 0 – 0.1 2.8 + 0.2 – 0.6 0.16 – 0.06 0.65 1.5 ± 0.15 0.10 3 – 0.4 +– 0.05 + 0.2 1.1 – 0.1 0.3 2.95 ± 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK — Conforms 0.011 g Cautions 1. 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