2SA673A(K) Silicon PNP Epitaxial Application • Low frequency amplifier • Medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA673A(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –4 V Collector current IC –0.5 A Collector power dissipation PC 0.4 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C 2 2SA673A(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –50 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage –50 — — V I C = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –4 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –0.5 µA VCB = –20 V, IE = 0 Emitter cutoff current I EBO — — –0.5 µA VEB = –3 V, IC = 0 Base to emitter voltage VBE — –0.64 — V VEB = –3 V, IC = –10 mA Collector to emitter saturation voltage VCE(sat) — –0.2 –0.6 V I C = –150 mA, IB = –15 mA*2 Base to emitter saturation voltage VBE(sat) — –0.87 — V I C = –150 mA, IB = –15 mA*2 DC current transfer ratio hFE*1 60 — 320 VCE = –3 V, IC = –10 mA hFE 10 — — VCE = –3 V, IC = –500 mA*2 Gain bandwidth product fT — 120 — MHz VCE = –3 V, IC = –10 mA Turn on time t on — 0.3 — µs VCC = –10.3 V Turn off time t off — 0.6 — µs I C = 10 IB1 = –10 IB2 = –10 mA Storage time t stg — 0.4 — µs VCC = –5 V, I C = IB1 = IB2 = –20 mA Notes: 1. The 2SA673A(K) is grouped by hFE as follows. 2. Pulse test B C D 60 to 120 100 to 200 160 to 320 See 2SA673A except for the above – mentioned characteristic curves. 3 2SA673A(K) Switching Time Test Circuit Switching Time Test Circuit ton, toff Test Circuit tstg Test Circuit D.U.T. 1.0 215 CRT D.U.T. 6k P.G. tr, tf ≤ 15 ns PW ≥ 5 µs duty ratio ≤ 10% 1k 50 6k 0.002 0.002 6V + – 50 + – 50 200 –10.3 V Unit R : Q C : µF P.G. tr ≤ 5 ns PW ≥ 5 µs duty ratio ≤ 2% Response Waveform 0 Input –13 V 0 Output 4 240 0.002 + – 50 Response Waveform 10% 90% 10% 90% ton –7 V 100 0.002 – + 50 CRT toff 9V Input 0 0 Output 10% 10% tstg –5 V Unit R : Q C : µF 600 400 200 Base to Emitter Saturation Voltage VBE(sat) (V) 0 100 150 50 Ambient Temperature Ta (°C) Base to Emitter Saturation Voltage vs. Collector Current –1.1 –1.0 IC = 10 IB –0.9 –0.8 –0.7 –0.6 –0.5 –25 0 25 50 C 75° = Ta –0.4 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 –20 –50 –100 –200 –500 Collector Current IC (mA) Collector to Emitter Saturation Voltage vs. Collector Current –0.7 –0.6 IC = 10 IB –0.5 –0.4 –0.3 –0.2 –0.1 0 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 –20 –50 –100 –200 –500 Collector Current IC (mA) Input and Output Capacitance vs. voltage Collector Output Capacitance Cob (pF) Emitter Input Capacitance Cib (pF) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve Collector to Emitter Saturation Voltage VCE(sat) (V) 2SA673A(K) 70 f = 1 MHz 60 50 Cib(IC = 0) 40 30 20 Cob(IE = 0) 10 0 –0.1 –0.3 –1.0 –3 –10 Collector to Base Voltage VCB (V) Emitter to Base Voltage VEB (V) –30 5 2SA673A(K) Switcing Time vs. Collector Current 1,000 VCC = –10.3 V IC = 10 IB1 = –10 IB2 Swiching Time t (ns) 500 toff tstg 200 100 50 ton td 20 10 –5 6 –10 –20 –50 –100 –200 Collector Current IC (mA) –500 Unit: mm 4.8 ± 0.3 0.7 0.60 Max 0.5 ± 0.1 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. 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