HITACHI 2SH19

ADE–208–292 (Z)
2SH19
Silicon N-Channel IGBT
1st. Edition
Feb. 1995
Application
TO–220AB
High speed power switching
Features
2
• High speed switching
• Low on saturation voltage
1
1
3
2
Ratings
Unit
3
1. Gate
2. Collector
3. Emitter
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
———————————————————————————————————————————
Collector to emitter voltage
VCES
600
VGES
±20
IC
24
ic(peak)
40
V
———————————————————————————————————————————
Gate to emitter voltage
V
———————————————————————————————————————————
Collector current
A
———————————————————————————————————————————
Collector peak current
A
———————————————————————————————————————————
Collector dissipation
PC*
75
Tj
150
Tstg
–55 to +150
W
———————————————————————————————————————————
Channel temperature
°C
———————————————————————————————————————————
Storage temperature
°C
———————————————————————————————————————————
* Value at Tc = 25°C
1
2SH19
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit Test conditions
———————————————————————————————————————————
Collector to emitter breakdown
voltage
V(BR)CES
600
—
—
V
IC = 100 µA, VGE = 0
———————————————————————————————————————————
Zero gate voltage collector
current
ICES
—
—
0.5
mA
VCE = 600 V, VGE = 0
———————————————————————————————————————————
Gate to emitter leak current
IGES
—
VGE(off)
3.0
VCE(sat)1
—
—
±1
µA
VGE = ±20 V, VCE = 0
———————————————————————————————————————————
Gate to emitter cutoff current
—
6.0
V
IC = 1 mA, VCE = 10 V
———————————————————————————————————————————
Collector to emitter saturation
voltage
1.5
—
V
IC = 10 A, VGE = 15 V
———————————————————————————————————————————
Collector to emitter saturation
voltage
VCE(sat)2
—
2.0
2.6
V
IC = 20 A, VGE = 15 V
———————————————————————————————————————————
Input capacitance
Cies
—
1800
—
pF
VCE = 10 V, VGE = 0,
f = 1 MHz
———————————————————————————————————————————
Switching time
tr
—
ton
—
tf
—
toff
—
130
—
————————————————
210
—
————————————————
2000
—
————————————————
2500
—
ns
IC = 20 A,
RL = 15 Ω,
VGE = ±15 V
Rg = 50 Ω
———————————————————————————————————————————
2
2SH19
Power vs. Temperature Derating
Maximum Safe Operation Area
100
I C (A)
ot)
Collector Current
s
sh
0.1
Ta = 25 °C
0.01
0
50
100
Case Temperature
150
Tc (°C)
200
Reverse Bias SOA
0.1
0.01
I C (A)
1
40
Collector Current
I C (A)
10
1
50
100
Collector Current
0µ
=
25
1
s
s(1
1 m 10 m
50
DC
(T Op
c= e
25 ratio
°C n
)
10
PW
Collector Dissipation
75
10
Pc (W)
100
30
Typical Output Characteristics
V GE = 15 V 12 V
Pulse Test
Ta = 25 °C
10 V
20
8V
10
Tc = 25 °C
0
200
400
600
800
Collector to Emitter Voltage V CE (V)
10
100
1000
Collector to Emitter Voltage V CE (V)
6V
0
2
4
6
8
10
Collector to Emitter Voltage V CE (V)
3
2SH19
Collector to Emitter Saturation Voltage
vs. Gate Emitter Voltage
Typical Transfer Characteristics
30
10
Collector to Emitter Saturation Voltage
V CE(sat) (V)
I C (A)
40
Collector Current
50
25 °C
75 °C
Tc = –25 °C
20
10
Pulse Test
V CE = 10 V
0
4
8
12
Gate to Emitter Voltage
16
20
V GE (V)
8
6
2
Pulse Test
0
4
10000
C (pF)
Tc =75 °C
25 °C
–25 °C
5
2
1
1
16
20
V GE (V)
Pulse Test
VGE = 15 V
10
0.5
4
8
12
Gate to Emitter Voltage
Typical Capacitance vs.
Collector to Emitter Voltage
Capacitance
Collector to Emitter Saturation Voltage
V CE(sat) (V)
20
10 A
4
Collector to Emitter Saturation Voltage
vs. Collector Current
50
I C = 20 A
15 A
Cies
1000
Coes
100
Cres
V GE = 0
f = 1 MHz
2
5
10
20
50
Collector Current I C (A)
100
10
0
10
20
30
40
50
Collector to Emitter Voltage V CE (V)
2SH19
Dynamic Input Characteristics
12
300
V GE
8
200
VCC = 400 V
300 V
200 V
100
I C = 20 A
4
V CE
0
20
40
60
80
Gate Charge Qg (nc)
tf
t (ns)
1000
Switching Time
16
2000
Gate to Emitter Voltage VGE (V)
Collector to Emitter Voltage VCE (V)
VCC = 400 V
300 V
200 V
400
Switching Charactristics
20
500
0
100
td(off)
500
200
100
td(on)
V CC = 300 V
V GE = ±15 V
Rg = 50 Ω
Tc = 25 °C
1
2
5
10 20
50
Collector Current I C (A)
50
tr
20
0.5
Switching Charactristics
Switching Charactristics
5000
5000
200
100
t (ns)
I C = 20 A
R L =15 Ω (VCC = 300 V)
1000 V
GE = ±15 V
Tc = 25 °C
500
td(off)
Switching Time
Switching Time
t (ns)
tf
tf
2000
2000
1000
500
I C = 20 A
R L = 15 Ω
V GE = ±15 V
Rg = 50 Ω
200
tr
100
tr
td(on)
50
10
td(off)
20
50 100 200
500 1000
Gate Resistance Rg ( Ω)
td(on)
50
–25
0
25
50
75
100
Case Temperature Tc (°C)
125
5
2SH19
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
1
D=1
0.5
0.3
0.2
0.1
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 1.67 °C/W, Tc = 25 °C
0.05
2
0.0
0.03
PCM
.01
0
1
D=
lse
u
tP
PW
o
sh
0.01
10 µ
PW
T
T
100 µ
1m
10 m
100 m
Pulse Width
1
10
PW (S)
Switchin Time Test Circuit
Waveforms
90%
0
10%
Vin
Ic Monitor
V CE
Vin Monitor
VCE
Monitor
Rg
RL
90%
D.U.T.
90%
V CC
Vin ± 15 V
Ic
10%
td(on)
ton
6
10%
tr td(off)
tf
toff
2SH19
Package Dimensions
0.1
f 3.6 +– 0.08
4.8 max
1.5 max
18.5 ±0.5
15.3 max
11.5 max
9.8 max
7.6 min
6.3 min
3.0max
1.27
• TO-220AB
Unit : mm
0.76 ±0.1
2.5 ±0.5
5.1 ±0.5
12.7 min
7.8 ±0.5
1.5 max
0.5
2.7 max
Hitachi Code TO–220AB
SC–46
EIAJ
—
JEDEC
7
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