HITACHI 2SJ186

2SJ186
Silicon P-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
High speed switching
Low drive current
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
UPAK
3
2 1
4
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
2SJ186
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–200
V
Gate to source voltage
VGSS
±15
V
Drain current
ID
–0.5
A
–1.0
A
–0.5
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
1
2
Channel dissipation
Pch*
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the alumina ceramic board (12.5×20×0.7 mm)
2
2SJ186
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
–200
—
—
V
I D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±15
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±12 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
–50
µA
VDS = –160 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–2.0
—
–4.0
V
I D = –1 mA, VDS = –10 V
Static drain to source on state
RDS(on)
—
8.0
12.0
Ω
I D = –0.25 A, VGS = –10 V*1
—
10.0
15.0
resistance
I D = –1 A, VGS = –10 V*1
Forward transfer admittance
|yfs|
0.18
0.3
—
S
I D = –0.25 A, VDS = –10 V*1
Input capacitance
Ciss
—
75
—
pF
VDS = –10 V, VGS = 0,
Output capacitance
Coss
—
32
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
5
—
pF
Turn-on delay time
t d(on)
—
6
—
ns
I D = –0.25 A, VGS = –10 V,
Rise time
tr
—
6
—
ns
RL = 120 Ω
Turn-off delay time
t d(off)
—
17
—
ns
Fall time
tf
—
15
—
ns
Body to drain diode forward
voltage
VDF
—
0.95
—
V
I F = –0.5 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
100
—
ns
I F = –0.5 A, VGS = 0,
diF/dt = 50 A/µs
Note:
1. Pulse test
Marking for 2SJ186 is “CY”.
3
2SJ186
Power vs. Temperature Derating
Maximum Safe Operation Area
–10
0.4
–0.1
ea
Ar
n)
DC
PW
Op
=
er
10
ati
ms
on
(T
(1
C
–0.01
Sh
ot)
=
25
°C
Ta = 25°C
0
50
100
Case Temperature TC (°C)
150
–0.001
–1
–8 V
–6 V
–5 V
–0.8
Drain Current ID (A)
Pulse Test
–0.6
–0.4
–10
–100
–1,000
Drain to Source Voltage VDS (V)
–1.0
–10 V
–0.8
)
Typical Transfer Characteristics
Typical Output Characteristics
–1.0
Drain Current ID (A)
10
µ
0µ s
1
s
m
s
10
(o
DS
0.8
–1
O
is per
Lim ati
ite on i
d nt
by hi
R s
Drain Current ID (A)
Channel Dissipation Pch (W)
1.2
VDS = –20 V
Pulse Test –25°C
25°C
TC = 75°C
–0.6
–0.4
–0.2
–0.2
VGS = –4 V
0
4
–10
–30
–40
–20
–50
Drain to Source Voltage VDS (V)
0
–4
–10
–2
–6
–8
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
–20
Pulse Test
–16
–12
–1 A
–8
–0.5 A
–4
ID = –0.2 A
0
–4
–8
–12
–16
–20
Gate to Source Voltage VGS (V)
100
Pulse Test
50
20
–15 V
5
2
1
–0.01 –0.02
Pulse Test
VGS = –10 V
–1 A
–0.5 A
16
12
ID = –0.2 A
8
4
–40
0
80
120
40
Case Temperature TC (°C)
–0.5
–0.05 –0.1 –0.2
Drain Current ID (A)
–1
Forward Transfer Admittance
vs. Drain Current
24
20
VGS = –10 V
10
Static Drain to Source on State
Resistance vs. Case Temperature
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
2SJ186
160
1.0
Pulse Test
0.5 VDS = –20 V
TC = –25°C
0.2
0.1
25°C
75°C
0.05
0.02
0.01
–0.01 –0.02
–0.05 –0.1 –0.2
–0.5 –0.1
Drain Current ID (A)
5
2SJ186
Capacitance vs.
Drain to Source Voltage
Body to Drain Diode Reverse
Recovery Time
1,000
VGS = 0
f = 1 MHz
Pulse Test
Ta = 25°C
di/dt = 50 A/µs
VGS = 0
500
200
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1,000
100
50
100
Coss
10
20
Crss
10
–0.01 –0.02 –0.05 –0.1 –0.2
–0.5
Reverse Drain Current IDR (A)
1
–1
0
VDD = –200 V
–150 V
–200 V
–600
–8
–12
VGS
ID = –0.5 A
–800
2
6
8
4
Gate Charge Qg (nc)
–16
–20
10
50
Switching Time t (ns)
VDS
–4
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
VDD = –100 V
–150 V
–200 V
–400
–1,000
0
100
0
–200
–20
–50
–10
–30
–40
Drain to Source Voltage VDS (V)
Switching Characteristics
Dynamic Input Characteristics
0
6
Ciss
VGS = 10 V
PW = 2 µs
duty < 1%
.
VDD =. –30V
20
tf
td (off)
10
td (on)
5
tr
2
1
–0.01 –0.02
–0.05 –0.1 –0.2
–0.5
Drain Current ID (A)
–1
2SJ186
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
–1.0
–0.8
Pulse Test
–0.6
–0.4
VGS = –10 V
–0.2
0
0, 5 V
–0.8
–2.0
–0.4
–1.2
–1.6
Source to Drain Voltage VSD (V)
7
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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