HITACHI 2SK3175A

2SK3175A
Silicon N Channel MOS FET
UHF Power Amplifier
ADE-208-1452 (Z)
1st. Edition
September 2001
Features
• High power output, High gain, High efficiency
P1dB = 110 W, PG = 16.0 dB, ηD = 60 % (at P1dB) typ. (f = 860MHz)
• Compact package
Outline
RFPAK-G
3
2
D
G
1
S
1. Drain
2. Source
3. Gate
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
In AC testing , the part should be mounted on heat sink with thermal compound.
2SK3175A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
ID
Drain peak current
Note1
ID(pulse)
Note2
Note3
Ratings
Unit
60
V
±10
V
8
A
16
A
Channel dissipation
Pch
126
W
Channel temperature
Tch
175
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Pin = 0 , PW ≤ 0.1 sec
2. PW ≤ 10 ms, duty cycle ≤ 50 %
3. Value at Tc = 25°C
Electrical Characteristics
(Tc = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero gate voltage drain current
IDSS
—
—
1
mA
VDS = 60 V, VGS = 0
Gate to source leak current
IGSS
—
—
±3
µA
VGS = ±10V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.0
2.2
3.0
V
ID = 1mA, VDS = 10V
Forward transfer admittance
|yfs|
4.0
6.7
—
S
VDS=10V, ID = 5A Note4
Input capacitance
Ciss
—
165
—
pF
VGS = 5V, VDS = 0
f = 1MHz
Reverse transfer capacitance
Crss
—
4
—
pF
VDG = 10V, VGS = 0
f = 1MHz
Output Power
Pout
100
135
—
W
VDS = 28V, IDQ = 0.6A
f = 860 MHz
Pin = 7 W
Drain Rational
ηD
—
65
—
%
VDS = 28V, IDQ = 0.6A
f = 860 MHz
Pin = 7 W
Note:
4. Pulse Test
Rev.0, Aug. 2001, page 2 of 8
2SK3175A
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
tio
5
n
(T
c
=
°C
25
2
)
I D (A)
50
10
ra
100
20
pe
Drain Current
150
O
Channel Dissipation
50
DC
Pch (W)
200
1
0
0.5
50
100
Case Temperature
150
200
1
Tc (°C)
Typical Output Characteristics
20
10 V
Typical Transfer Characteristics
20
8V
V DS = 10 V
Pulse Test
5V
12
Pulse Test
8
4V
4
I D (A)
16
Drain Current
I D (A)
6V
Drain Current
10
20
50 100
2
5
Drain to Source Voltage V DS (V)
16
12
8
4
VGS = 3 V
0
2
4
6
Drain to Source Voltage
8
10
V DS (V)
0
1
2
3
4
Gate to Source Voltage
5
6
V GS (V)
Rev.0, Aug. 2001, page 3 of 8
10
Forward Transfer Admittance vs.
Drain Current
Drain to Source Saturation Voltage
V DS(on) (V)
Forward Transfer Admittance |y fs | (S)
2SK3175A
5
2
1
0.5
5
2
1
0.5
0.2
0.1
0.05
V DS = 10 V
Pulse Test
0.2
0.1
0.1 0.2
5 10
1
2
Drain Current I D (A)
0.01
0.1 0.2
20
0.5
100 mA
10 mA
2.0
mA
Input Capacitance Ciss (pF)
2.8
ID = 1
165
160
155
150
V DS = 0
f = 1 MHz
145
V DS = 10 V
1.6
- 25
0
25
50
75
Ambient Temperature
Rev.0, Aug. 2001, page 4 of 8
100
Ta (°C)
50
170
1A
2.4
5 10 20
0.5 1 2
Drain Current I D (A)
Input Capacitance vs.
Gate to Source Voltage
3.6
3.2
VGS = 10 V
Pulse Test
0.02
Gate to Source Cutoff Voltage vs.
Ambient Temperature
Gate to Source Cutoff Voltage
V GS(off) (V)
Drain to Source Saturatioin Voltage vs.
Drain Current
125
140
-10
-6
-2
2
6
Gate to Source Voltage VGS (V)
10
2SK3175A
Reverse Transfer Capacitance Crss (pF)
Output Capacitance vs.
Drain to Source Voltage
Output Capacitance Coss (pF)
1000
500
V GS = 0
f = 1 MHz
200
100
50
20
10
1
2
5
10
20
50
100
Reverse Transfer Capacitance vs.
Drain to Gate Voltage
100
V GS = 0
f = 1 MHz
50
20
10
5
2
1
1
2
10
20
50
100
Drain to Gate Voltege V DG (V)
Drain to Source Voltage V DS (V)
160
5
Output Power, Drain Rational
vs. Input Power
Drain Rational vs. Output Power
80
80
60
40
80
40
0
0
20
V DS = 28 V
I DQ = 0.6 A
f = 860 MHz
1
2
3
4
5
Input power Pin (W)
6
7
0
Drain Rational η D (%)
ηD
120
Drain Rational η D (%)
Output Power Pout (W)
Pout
60
40
20
V DS = 28 V
I DQ = 0.6 A
f = 860 MHz
0
0
25
50
75
100
125
150
Output Power Pout (W)
Rev.0, Aug. 2001, page 5 of 8
2SK3175A
Output Power, Drain Rational
vs. Frequency
60
100
50
80
40
60
30
20
20
V DS = 28 V
I DQ = 0.6 A
Pin = 7 W
0
830
840
850
10
860
870
Frequency f (MHz)
Rev.0, Aug. 2001, page 6 of 8
880
0
890
IMD (dBc)
Output Power Pout (W)
120
40
100
70
VDS = 28 V
IDQ =0.6A
fc = 860 MHz
∆f=1MHz
90
80
70
Inter Modulation
ηD
Pout
Drain Rational η D (%)
140
Inter Modulation
vs. Total Output Power
IM7H
60
50
IM7L
IM5L
IM5H
40
IM3H
30
20
30
34
38
Total Output Power
42
IM3L
46
50
Pout-total (dBm)
2SK3175A
Package Dimensions
As of July, 2001
2-R1.6
11.7 ± 1.0
15.4 ± 0.3
15.6 ± 0.3
3.2 ± 0.3
9.6 ± 0.3
22.8 ± 0.5
Hitachi Code
JEDEC
JEITA
Mass (reference value)
5.67 ± 0.5
4.14 ± 0.3
2.5 ± 0.3
(0.1)
26.0 ± 0.5
3.14 ± 0.3
C1.0
12.8 ± 0.3
16.8 ± 0.5
(0.5)
Unit: mm
RFPAK-G
–
–
11.0 g
Rev.0, Aug. 2001, page 7 of 8
2SK3175A
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.0, Aug. 2001, page 8 of 8