2SK3175A Silicon N Channel MOS FET UHF Power Amplifier ADE-208-1452 (Z) 1st. Edition September 2001 Features • High power output, High gain, High efficiency P1dB = 110 W, PG = 16.0 dB, ηD = 60 % (at P1dB) typ. (f = 860MHz) • Compact package Outline RFPAK-G 3 2 D G 1 S 1. Drain 2. Source 3. Gate This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. In AC testing , the part should be mounted on heat sink with thermal compound. 2SK3175A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current Note1 ID(pulse) Note2 Note3 Ratings Unit 60 V ±10 V 8 A 16 A Channel dissipation Pch 126 W Channel temperature Tch 175 °C Storage temperature Tstg –55 to +150 °C Note: 1. Pin = 0 , PW ≤ 0.1 sec 2. PW ≤ 10 ms, duty cycle ≤ 50 % 3. Value at Tc = 25°C Electrical Characteristics (Tc = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage drain current IDSS — — 1 mA VDS = 60 V, VGS = 0 Gate to source leak current IGSS — — ±3 µA VGS = ±10V, VDS = 0 Gate to source cutoff voltage VGS(off) 1.0 2.2 3.0 V ID = 1mA, VDS = 10V Forward transfer admittance |yfs| 4.0 6.7 — S VDS=10V, ID = 5A Note4 Input capacitance Ciss — 165 — pF VGS = 5V, VDS = 0 f = 1MHz Reverse transfer capacitance Crss — 4 — pF VDG = 10V, VGS = 0 f = 1MHz Output Power Pout 100 135 — W VDS = 28V, IDQ = 0.6A f = 860 MHz Pin = 7 W Drain Rational ηD — 65 — % VDS = 28V, IDQ = 0.6A f = 860 MHz Pin = 7 W Note: 4. Pulse Test Rev.0, Aug. 2001, page 2 of 8 2SK3175A Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating tio 5 n (T c = °C 25 2 ) I D (A) 50 10 ra 100 20 pe Drain Current 150 O Channel Dissipation 50 DC Pch (W) 200 1 0 0.5 50 100 Case Temperature 150 200 1 Tc (°C) Typical Output Characteristics 20 10 V Typical Transfer Characteristics 20 8V V DS = 10 V Pulse Test 5V 12 Pulse Test 8 4V 4 I D (A) 16 Drain Current I D (A) 6V Drain Current 10 20 50 100 2 5 Drain to Source Voltage V DS (V) 16 12 8 4 VGS = 3 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 4 Gate to Source Voltage 5 6 V GS (V) Rev.0, Aug. 2001, page 3 of 8 10 Forward Transfer Admittance vs. Drain Current Drain to Source Saturation Voltage V DS(on) (V) Forward Transfer Admittance |y fs | (S) 2SK3175A 5 2 1 0.5 5 2 1 0.5 0.2 0.1 0.05 V DS = 10 V Pulse Test 0.2 0.1 0.1 0.2 5 10 1 2 Drain Current I D (A) 0.01 0.1 0.2 20 0.5 100 mA 10 mA 2.0 mA Input Capacitance Ciss (pF) 2.8 ID = 1 165 160 155 150 V DS = 0 f = 1 MHz 145 V DS = 10 V 1.6 - 25 0 25 50 75 Ambient Temperature Rev.0, Aug. 2001, page 4 of 8 100 Ta (°C) 50 170 1A 2.4 5 10 20 0.5 1 2 Drain Current I D (A) Input Capacitance vs. Gate to Source Voltage 3.6 3.2 VGS = 10 V Pulse Test 0.02 Gate to Source Cutoff Voltage vs. Ambient Temperature Gate to Source Cutoff Voltage V GS(off) (V) Drain to Source Saturatioin Voltage vs. Drain Current 125 140 -10 -6 -2 2 6 Gate to Source Voltage VGS (V) 10 2SK3175A Reverse Transfer Capacitance Crss (pF) Output Capacitance vs. Drain to Source Voltage Output Capacitance Coss (pF) 1000 500 V GS = 0 f = 1 MHz 200 100 50 20 10 1 2 5 10 20 50 100 Reverse Transfer Capacitance vs. Drain to Gate Voltage 100 V GS = 0 f = 1 MHz 50 20 10 5 2 1 1 2 10 20 50 100 Drain to Gate Voltege V DG (V) Drain to Source Voltage V DS (V) 160 5 Output Power, Drain Rational vs. Input Power Drain Rational vs. Output Power 80 80 60 40 80 40 0 0 20 V DS = 28 V I DQ = 0.6 A f = 860 MHz 1 2 3 4 5 Input power Pin (W) 6 7 0 Drain Rational η D (%) ηD 120 Drain Rational η D (%) Output Power Pout (W) Pout 60 40 20 V DS = 28 V I DQ = 0.6 A f = 860 MHz 0 0 25 50 75 100 125 150 Output Power Pout (W) Rev.0, Aug. 2001, page 5 of 8 2SK3175A Output Power, Drain Rational vs. Frequency 60 100 50 80 40 60 30 20 20 V DS = 28 V I DQ = 0.6 A Pin = 7 W 0 830 840 850 10 860 870 Frequency f (MHz) Rev.0, Aug. 2001, page 6 of 8 880 0 890 IMD (dBc) Output Power Pout (W) 120 40 100 70 VDS = 28 V IDQ =0.6A fc = 860 MHz ∆f=1MHz 90 80 70 Inter Modulation ηD Pout Drain Rational η D (%) 140 Inter Modulation vs. Total Output Power IM7H 60 50 IM7L IM5L IM5H 40 IM3H 30 20 30 34 38 Total Output Power 42 IM3L 46 50 Pout-total (dBm) 2SK3175A Package Dimensions As of July, 2001 2-R1.6 11.7 ± 1.0 15.4 ± 0.3 15.6 ± 0.3 3.2 ± 0.3 9.6 ± 0.3 22.8 ± 0.5 Hitachi Code JEDEC JEITA Mass (reference value) 5.67 ± 0.5 4.14 ± 0.3 2.5 ± 0.3 (0.1) 26.0 ± 0.5 3.14 ± 0.3 C1.0 12.8 ± 0.3 16.8 ± 0.5 (0.5) Unit: mm RFPAK-G – – 11.0 g Rev.0, Aug. 2001, page 7 of 8 2SK3175A Disclaimer 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 5.0 Rev.0, Aug. 2001, page 8 of 8