ETC HAT1059C

HAT1059C
Silicon P Channel Power MOS FET
Power Switching
ADE-208-1450A (Z)
Rev.1
Sep. 2001
Features
• Low on-resistance
RDS(on) = 52 mΩ typ (at VGS = –4.5 V, ID = –1.5 A)
RDS(on) = 71 mΩ typ (at VGS = –2.5 V, ID = –1.5 A)
RDS(on) = 98 mΩ typ (at VGS = –1.8 V, ID = –1.5 A)
• Capable of 1.8 V gate drive
• Small Package: CMFPAK-6
Outline
CMFPAK - 6
2 3 4 5
DDD D
059
Index band
6
G
Index band
4
5
6
1
S
1
2
3
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
HAT1059C
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–12
V
Gate to source voltage
VGSS
±8
V
Drain current
ID
–3
A
0.65
W
*
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
*Value on the FR4. (40 × 40 × 1.6 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
–12
—
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±8
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
± 10
µA
VGS = ±6.4 V, VDS = 0
Zero gate voltege drain current
IDSS
—
—
–1
µA
VDS = –12 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–0.2
—
–1.0
V
ID = –1 mA, VDS = –10 V
Static drain to source on state
RDS(on)
—
52
64
mΩ
ID = –1.5 A, VGS = –4.5 V
resistance
RDS(on)
—
71
88
mΩ
ID = –1.5 A, VGS = –2.5 V
RDS(on)
—
98
126
mΩ
ID = –1.5 A, VGS = –1.8 V
|yfs|
4
5
—
S
ID = –1.5 A, VDS = –10 V
Forward transfer admittance
Input capacitance
Ciss
—
1080
—
pF
VDS = –10 V
Output capacitance
Coss
—
215
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
150
—
pF
f = 1 MHz
Total gate charge
Qg
—
13
—
nC
VDS = –10 V
Gate to source charge
Qgs
—
2.2
—
nC
VGS = –4.5 V
Gate to drain charge
Qdg
—
3.8
—
nC
ID = –3 A
Turn-on delay time
td(on)
—
35
—
ns
VGS = –4 V, ID = –1.5 A
Rise time
tr
—
170
—
ns
RL = 6.66 Ω
Turn-off delay time
td(off)
—
690
—
ns
Fall time
tf
—
460
—
ns
Body–drain diode forward voltage
VSDF
—
–0.85
–1.20
V
Rev.1, Sep. 2001, page 2 of 7
IF = –3.0 A, VGS = 0
HAT1059C
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
-100
600
100 µs
-30 1 ms
-10
(A)
Test Condition :
When using the FR4
(40 × 40 × 1.6 mm)
400
200
10 µs
PW
-3
Drain Current
Channel Dissipation
ID
Pch (mW)
800
-1
DC
=
-0.3 Operation in
this area is
-0.1 limited by RDS(on)
10
m
s
Op
er
at
ion
-0.03 Ta = 25°C
-0.01 1 shot Pulse
0
0
50
100
Ambient Temperature
150
200
-1
-3
-10 -30 -100
-0.1 -0.3
Drain to Source Voltage VDS (V)
Ta (°C)
*When using the FR4 (40 × 40 × 1.6 mm)
Typical Output Characteristics
5V
3V
-6
-4
-2
VGS = -1 V
0
-2
-4
-6
Drain to Source Voltage
-8
V DS (V)
-10
-14
Typical Transfer Characteristics
V DS = 10 V
Pulse Test
-12
ID
I D (A)
-2 V
-8
(A)
Pulse Test
4V
Drain Current
-16
-10
Drain Current
-10
-8
-6
-4
Tc = -25°C
25°C
75°C
-2
0
0
-2.5 -3
-0.5 -1
-1.5
-2
Gate to Source Voltage V GS (V)
Rev.1, Sep. 2001, page 3 of 7
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Ta = 25°C
-3 A
-100
-0.5 A
Static Drain to Source on State Resistance
RDS(on) (Ω)
-2.5
-5
-7.5
-10
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.2
Pulse Test
-3 A
0.15
-1.5 A
-0.5 A
0.1
-1.5 A, -3 A
-1.8 V
-2.5 V
0.05
VGS = -4.5 V
0
-50
VGS = -1.8 V
100
-1.5 A
0
Drain to Source On State Resistance
R DS(on) (m Ω)
-200
Static Drain to Source on State Resistance
vs. Drain Current
200
Pulse Test
Ta = 25°C
ID = -0.5 A, -1.5 A, -3 A
0
50
100
150
200
Case Temperature Tc (°C)
Rev.1, Sep. 2001, page 4 of 7
-2.5 V
-4.5 V
1
-0.1
-1.0
Drain Current
-10
ID
(A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Voltage
VDS(on) (mV)
HAT1059C
100
Pulse Test
30
10
Tc = -25°C
3
75°C
25°C
1
0.3
0.1
0.1
V DS = -10 V
0.3
1
3
Drain Current
10
30
ID
(A)
100
HAT1059C
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
Coss
Crss
0
5
10
VDD = -10 V
-7 V
-5 V
-8
15
VDD = -10 V
Drain to Source Voltage V DS (V)
10000
Qg (nc)
1000
td(off)
tf
tr
td(on)
10
0.001 0.01
0.1
1
10
Drain Current I D (A)
100
Reverse Drain Current I DR (A)
10
VGS = -4.5 V , VDD = -10 V
Switching Time t (ns)
-8
20
10
Gate Charge
Reverse Drain Current vs.
Souece to Drain Voltage
Switching Characteristics
100
-4
-5 V
-7 V
-16
0
10
0
ID = -3 A
V GS (V)
VGS = 0
f = 1 MHz
0
Gate to Source Voltage
V DS (V)
Dynamic Input Characteristics
Drain to Source Voltage
Capacitance C (pF)
10000
Pulse Test
4.5 V
1.8 V
V GS = 0
5
Ta = 25°C
0
0.5
1.0
1.5
Source to Drain Voltage
2.0
2.5
V SDF (V)
Rev.1, Sep. 2001, page 5 of 7
HAT1059C
Package Dimensions
Unit: mm
+ 0.1
6 – 0.2 – 0.05
1.7 ± 0.1
0.2
2.1 ± 0.05
0.2
2.0 ± 0.1
+ 0.1
0.65
0.65
0.15 – 0.05
0.75 ± 0.05
1.3 ± 0.1
Rev.1, Sep. 2001, page 6 of 7
Hitachi Code
JEDEC
JEITA
Mass (reference value)
CMFPAK-6
—
Conforms
1.2 mg
HAT1059C
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.1, Sep. 2001, page 7 of 7