HAT1059C Silicon P Channel Power MOS FET Power Switching ADE-208-1450A (Z) Rev.1 Sep. 2001 Features • Low on-resistance RDS(on) = 52 mΩ typ (at VGS = –4.5 V, ID = –1.5 A) RDS(on) = 71 mΩ typ (at VGS = –2.5 V, ID = –1.5 A) RDS(on) = 98 mΩ typ (at VGS = –1.8 V, ID = –1.5 A) • Capable of 1.8 V gate drive • Small Package: CMFPAK-6 Outline CMFPAK - 6 2 3 4 5 DDD D 059 Index band 6 G Index band 4 5 6 1 S 1 2 3 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate HAT1059C Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –12 V Gate to source voltage VGSS ±8 V Drain current ID –3 A 0.65 W * Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C *Value on the FR4. (40 × 40 × 1.6 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS –12 — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±8 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ± 10 µA VGS = ±6.4 V, VDS = 0 Zero gate voltege drain current IDSS — — –1 µA VDS = –12 V, VGS = 0 Gate to source cutoff voltage VGS(off) –0.2 — –1.0 V ID = –1 mA, VDS = –10 V Static drain to source on state RDS(on) — 52 64 mΩ ID = –1.5 A, VGS = –4.5 V resistance RDS(on) — 71 88 mΩ ID = –1.5 A, VGS = –2.5 V RDS(on) — 98 126 mΩ ID = –1.5 A, VGS = –1.8 V |yfs| 4 5 — S ID = –1.5 A, VDS = –10 V Forward transfer admittance Input capacitance Ciss — 1080 — pF VDS = –10 V Output capacitance Coss — 215 — pF VGS = 0 Reverse transfer capacitance Crss — 150 — pF f = 1 MHz Total gate charge Qg — 13 — nC VDS = –10 V Gate to source charge Qgs — 2.2 — nC VGS = –4.5 V Gate to drain charge Qdg — 3.8 — nC ID = –3 A Turn-on delay time td(on) — 35 — ns VGS = –4 V, ID = –1.5 A Rise time tr — 170 — ns RL = 6.66 Ω Turn-off delay time td(off) — 690 — ns Fall time tf — 460 — ns Body–drain diode forward voltage VSDF — –0.85 –1.20 V Rev.1, Sep. 2001, page 2 of 7 IF = –3.0 A, VGS = 0 HAT1059C Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area -100 600 100 µs -30 1 ms -10 (A) Test Condition : When using the FR4 (40 × 40 × 1.6 mm) 400 200 10 µs PW -3 Drain Current Channel Dissipation ID Pch (mW) 800 -1 DC = -0.3 Operation in this area is -0.1 limited by RDS(on) 10 m s Op er at ion -0.03 Ta = 25°C -0.01 1 shot Pulse 0 0 50 100 Ambient Temperature 150 200 -1 -3 -10 -30 -100 -0.1 -0.3 Drain to Source Voltage VDS (V) Ta (°C) *When using the FR4 (40 × 40 × 1.6 mm) Typical Output Characteristics 5V 3V -6 -4 -2 VGS = -1 V 0 -2 -4 -6 Drain to Source Voltage -8 V DS (V) -10 -14 Typical Transfer Characteristics V DS = 10 V Pulse Test -12 ID I D (A) -2 V -8 (A) Pulse Test 4V Drain Current -16 -10 Drain Current -10 -8 -6 -4 Tc = -25°C 25°C 75°C -2 0 0 -2.5 -3 -0.5 -1 -1.5 -2 Gate to Source Voltage V GS (V) Rev.1, Sep. 2001, page 3 of 7 Drain to Source Saturation Voltage vs. Gate to Source Voltage Ta = 25°C -3 A -100 -0.5 A Static Drain to Source on State Resistance RDS(on) (Ω) -2.5 -5 -7.5 -10 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.2 Pulse Test -3 A 0.15 -1.5 A -0.5 A 0.1 -1.5 A, -3 A -1.8 V -2.5 V 0.05 VGS = -4.5 V 0 -50 VGS = -1.8 V 100 -1.5 A 0 Drain to Source On State Resistance R DS(on) (m Ω) -200 Static Drain to Source on State Resistance vs. Drain Current 200 Pulse Test Ta = 25°C ID = -0.5 A, -1.5 A, -3 A 0 50 100 150 200 Case Temperature Tc (°C) Rev.1, Sep. 2001, page 4 of 7 -2.5 V -4.5 V 1 -0.1 -1.0 Drain Current -10 ID (A) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source Voltage VDS(on) (mV) HAT1059C 100 Pulse Test 30 10 Tc = -25°C 3 75°C 25°C 1 0.3 0.1 0.1 V DS = -10 V 0.3 1 3 Drain Current 10 30 ID (A) 100 HAT1059C Typical Capacitance vs. Drain to Source Voltage Ciss 1000 Coss Crss 0 5 10 VDD = -10 V -7 V -5 V -8 15 VDD = -10 V Drain to Source Voltage V DS (V) 10000 Qg (nc) 1000 td(off) tf tr td(on) 10 0.001 0.01 0.1 1 10 Drain Current I D (A) 100 Reverse Drain Current I DR (A) 10 VGS = -4.5 V , VDD = -10 V Switching Time t (ns) -8 20 10 Gate Charge Reverse Drain Current vs. Souece to Drain Voltage Switching Characteristics 100 -4 -5 V -7 V -16 0 10 0 ID = -3 A V GS (V) VGS = 0 f = 1 MHz 0 Gate to Source Voltage V DS (V) Dynamic Input Characteristics Drain to Source Voltage Capacitance C (pF) 10000 Pulse Test 4.5 V 1.8 V V GS = 0 5 Ta = 25°C 0 0.5 1.0 1.5 Source to Drain Voltage 2.0 2.5 V SDF (V) Rev.1, Sep. 2001, page 5 of 7 HAT1059C Package Dimensions Unit: mm + 0.1 6 – 0.2 – 0.05 1.7 ± 0.1 0.2 2.1 ± 0.05 0.2 2.0 ± 0.1 + 0.1 0.65 0.65 0.15 – 0.05 0.75 ± 0.05 1.3 ± 0.1 Rev.1, Sep. 2001, page 6 of 7 Hitachi Code JEDEC JEITA Mass (reference value) CMFPAK-6 — Conforms 1.2 mg HAT1059C Disclaimer 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 5.0 Rev.1, Sep. 2001, page 7 of 7