Databook.fxp 1/13/99 2:09 PM Page C-9 C-9 01/99 VCR3P P-Channel Silicon Voltage Controlled Resistor JFET ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 5¡C. Small Signal Attenuators Filters Amplifier Gain Control Oscillator Amplitude Control Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating VCR3P At 25°C free air temperature: Static Electrical Characteristics Min 15 V 10 mA 300 mW 2.4 mW/°C Process PJ99 Max Unit V IG = 1 µA, VDS = ØV 20 nA VGS = 15V, VDS = ØV 15 Test Conditions Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) 1 5 V ID = – 1 µA, VDS = – 10V rds(on) 70 200 Ω VGS = ØV, ID = ØA f = 1 kHz Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Cdg 25 pF VDG = 10V, IS = ØA f = 1 MHz Source Gate Capacitance Csg 15 pF VGS = 10V, ID = ØA f = 1 MHz TOÐ18 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Gate & Case, 3 Drain www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375