High Current MegaMOSTMFET VDSS IXTK 74 N20 IXTH 68 N20 ID25 200 V 200 V RDS(on) 74 A 35 mW 68 A 35 mW N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 74N20 68N20 74 68 A A IDM TC = 25°C, pulse width limited by TJM 74N20 68N20 296 272 A A PD TC = 25°C 74N20 68N20 416 300 W W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 1.13/10 Nm/lb.in. 10 6 g g 300 °C TJ Md Mounting torque Weight TO-264 TO-247 Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. VDSS VGS = 0 V, ID = 5 mA 200 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 V DC, VDS = 0 IDSS VDS = 0.8 VDSS VGS = 0 V RDS(on) TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2% IXYS reserves the right to change limits, test conditions and dimensions. C2 - 14 Max. V 4.0 V ±100 nA 500 3 µA mA 35 mΩ TO-247AD (IXTH) D (TAB) TO-264 AA (IXTK) G D (TAB) D S G = Gate S = Source D = Drain Tab = Drain Features Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure International standard package Fast switching times Applications Motor controls DC choppers Uninterruptable Power Supplies (UPS) Switch-mode and resonant-mode Advantages Easy to mount with one screw (isolated mounting screw hole) Space savings High power density 95512C (12/97) © 1998 IXYS All rights reserved IXTH 68N20 IXTK 74N20 Symbol Test Conditions (T J = 25°C unless otherwise specified) Characteristic values Min. Typ. Max. 42 S 5450 pF 1275 pF Crss 630 pF td(on) 30 ns gfs VDS = 10 V; ID = 0.5 ID25, pulse test 35 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 230 ns td(off) RG = 1 Ω (External) 180 ns 50 ns tf 1 2 3 Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. Qg(on) Qgs TO-247 AD (IXTH) Outline VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 300 nC 75 nC 100 nC TO-264 AA RthJC 0.30 0.15 RthCK TO-247 AD RthJC K/W 0.35 0.15 RthCK Source-Drain Diode K/W K/W K/W Ratings and Characteristics (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 74N20 68N20 74 68 A A ISM Repetitive; pulse width limited by TJM 74N20 68N20 296 272 A A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = IS, -di/dt = 100 A/µs, VR = 100V 600 ns Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC TO-264 AA Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: © 1998 IXYS All rights reserved 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 5,187,117 5,237,481 Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 5,486,715 5,381,025 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 C2 - 15 C2