KDV804KS SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO. E B L L FEATURES Small Package : SOT-23. H ) P UNIT Reverse Voltage VR 15 V Junction Temperature Tj 150 Tstg Storage Temperature Range P MILLIMETERS _ 0.20 2.93 + B C 1.30+0.20/-0.15 1.30 MAX D 0.45+0.15/-0.05 E G 2.40+0.30/-0.20 1.90 H J K 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 L M N 0.55 0.20 MIN 1.00+0.20/-0.10 J RATING P K SYMBOL C CHARACTERISTIC 1 N MAXIMUM RATING (Ta=25 3 G A 2 D Low Series Resistance : rs=0.3(TYP.). DIM A 7 M 3 1. ANODE 1 -55 150 2. ANODE 2 3. CATHODE 2 SOT-23 CLASSIFICATION OF CAPACITANCE RATIO GRADE GRADE CAPACITANCE(C2V) A 42 43.5 B 43 44.5 C 44 45.5 D 45 46.5 E 46 47.5 1 UNIT pF Marking Grade Type Name Lot No. T3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=10 A 15 - - V Reverse Current IR VR=15V - - 50 nA Capacitance C2V VR=2V, f=1MHz 42 - 47.5 C8V VR=8V, f=1MHz 24 - 28.8 1.74 - 1.85 - 0.3 0.4 Capacitance Ratio C2V/C8V Series Resistance rS 2003. 9. 16 Revision No : 0 C=38pF, f=100MHz pF 1/2 KDV804KS C - VR Q 100 - VR 1k Ta=25 C FIGURE OF MERIT Q CAPACITANCE C (pF) f=1MHz 50 30 10 500 300 100 f=50MHz Ta=25 C 5 50 1 3 5 10 REVERSE VOLTAGE VR (V) 2003. 9. 16 Revision No : 0 30 1 3 5 10 30 REVERSE VOLTAGE VR (V) 2/2