KEC KTA1385D

SEMICONDUCTOR
KTA1385D/L
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
A
FEATURES
I
C
J
D
High Power Dissipation : PC=1.3W(Ta=25 )
M
O
K
E
Q
B
Complementary to KTC5103D/L
H
MAXIMUM RATING (Ta=25
P
)
CHARACTERISTIC
F
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-7
V
DC
IC
-5
Pulse *
ICP
-8
IB
-1
1
L
F
2
3
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
_ 0.2
6.60 +
_ 0.2
6.10 +
_ 0.2
5.0 +
_ 0.2
1.10 +
_ 0.2
2.70 +
_ 0.1
2.30 +
1.00 MAX
_ 0.2
2.30 +
_ 0.1
0.5 +
_ 0.20
2.00 +
_ 0.10
0.50 +
_ 0.10
0.91+
_ 0.1
0.90 +
_ 0.10
1.00 +
0.95 MAX
1. BASE
2. COLLECTOR
Tc=25
PC
Storage Temperature Range
* PW
10ms, Duty Cycle
W
15
Tj
150
Tstg
-55 150
Junction Temperature
J
D
Dissipation
1.0
B
Ta=25
I
A
C
K
Collector Power
A
P
H
E
Base Current
DPAK
A
Q
Collector Current
3. EMITTER
G
50%
F
1
F
2
L
3
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
MILLIMETERS
_ 0.2
6.60 +
_ 0.2
6.10 +
_
5.0 + 0.2
_ 0.2
1.10 +
_ 0.6
9.50 +
_ 0.1
2.30 +
_ 0.1
0.76 +
1.0 MAX
_ 0.2
2.30 +
_ 0.1
0.5 +
_
2.0 + 0.2
_ 0.1
0.50 +
_ 0.1
1.0 +
0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
-
-
-10
A
A
ICBO
VCB=-50V, IE=0
IEBO
VEB=-7V, IC=0
-
-
-10
hFE 1
VCE=-1V, IC=-0.1A
60
-
-
hFE2 (Note)
VCE=-1V, IC=-2A
160
-
400
hFE 3
VCE=-2V, IC=-5A
50
-
-
Collector-Emitter Saturation Voltage *
VCE(sat)
IC=-2A, IB=-0.2A
-
-0.14
-0.3
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=-2A, IB=-0.2A
-
-0.9
-1.2
V
-
0.15
1
-
0.78
2.5
-
0.18
1
Emitter Cut-off Current
DC Current Gain
*
*
OUTPUT
ton
Turn On Time
I B2
INPUT
0
Switching
Time
tstg
Storage Time
350 S,
Note) hFE(2) Classification :
2003. 3. 27
I B2
S
20µsec
tf
Fall Time
* Pulse test : PW
IB1
I B1
5Ω
Collector Cut-off Current
-IB1 =IB2=0.2A
DUTY CYCLE <
= 1%
VCC =-10V
Duty Cycle 2% Pulse
O:160 320,
Y:200 400.
Revision No : 3
1/3
KTA1385D/L
d T - TC
Pc - Ta
160
POWER DISSIPATION PC (W)
25
140
I C DERATING dT (%)
20
15
Tc
=2
10
5
C
5
100
S/b
Lim
Di
ited
ssi
pa
tio
nL
im
ite
d
80
60
40
20
Ta=25 C
0
120
0
50
0
100
150
200
250
0
AMBIENT TEMPERATURE Ta ( C)
-10
-0.5
* SINGLE NONREPETIVE
PULSED Tc=25 C
CURVES MUST BE DERATED
LINERLY WITH INCREASE
IN TEMPERATURE
-0.3
-0.1
-1
-3
-5
-30 -50
-10
75
150
175 200
-6
-4
-2
0
-100
REVERSE BIAS
SAFE OPERATING AREA
-40
-20
-60
-80
-100
COLLECTOR-EMITTER VOLTAGE VCE (V)
I C - V CE
h FE - I C
1k
-10
mA
-6
00
I B =-40mA
I B =-30mA
=-2
-4
DC CURRENT GAIN h FE
A
0m
A
A
-15
00m =-80m
1
I B=
=
B
I
I B =-60mA
IB
-8
I B =-20mA
IB
COLLECTOR CURRENT I C (A)
125
-8
COLLECTOR-EMITTER VOLTAGE VCE (V)
I B =-10mA
-2
I B =0mA
0
-0.4
-0.8
-1.2
-1.6
COLLECTOR-EMITTER VOLTAGE VCE (V)
2003. 3. 27
100
VCEO (SUS)
-1
COLLECTOR CURRENT I C (A)
IC MAX.
-3
2m
S
10
mS *
*
20
Di 0m
ss
i S*
S/ pati
b L on
im Li
ite mi
d ted
VCEO MAX.
COLLECTOR CURRENT I C (A)
-10
-5
50
CASE TEMPERATURE Tc ( C)
SAFE OPERATING AREA
I C (Pulse)MAX.*
25
Revision No : 3
-2.0
500
300
VCE =-2V
100
VCE =-1V
50
30
10
5
3
1
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR CURRENT I C (A)
2/3
KTA1385D/L
VBE(sat), VCE(sat) - I C
SATURATION VOLTAGE
VBE(sat), V CE(sat) (V)
-10
I C /I B =10
-5
-3
VBE(sat)
-1
-0.5
-0.3
-0.1
VCE(sat)
-0.05
-0.03
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR CURRENT I C (A)
2003. 3. 27
Revision No : 3
3/3