SEMICONDUCTOR KTA1385D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT A FEATURES I C J D High Power Dissipation : PC=1.3W(Ta=25 ) M O K E Q B Complementary to KTC5103D/L H MAXIMUM RATING (Ta=25 P ) CHARACTERISTIC F SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -7 V DC IC -5 Pulse * ICP -8 IB -1 1 L F 2 3 DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 0.2 5.0 + _ 0.2 1.10 + _ 0.2 2.70 + _ 0.1 2.30 + 1.00 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 0.20 2.00 + _ 0.10 0.50 + _ 0.10 0.91+ _ 0.1 0.90 + _ 0.10 1.00 + 0.95 MAX 1. BASE 2. COLLECTOR Tc=25 PC Storage Temperature Range * PW 10ms, Duty Cycle W 15 Tj 150 Tstg -55 150 Junction Temperature J D Dissipation 1.0 B Ta=25 I A C K Collector Power A P H E Base Current DPAK A Q Collector Current 3. EMITTER G 50% F 1 F 2 L 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 5.0 + 0.2 _ 0.2 1.10 + _ 0.6 9.50 + _ 0.1 2.30 + _ 0.1 0.76 + 1.0 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 2.0 + 0.2 _ 0.1 0.50 + _ 0.1 1.0 + 0.90 MAX 1. BASE 2. COLLECTOR 3. EMITTER IPAK ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT - - -10 A A ICBO VCB=-50V, IE=0 IEBO VEB=-7V, IC=0 - - -10 hFE 1 VCE=-1V, IC=-0.1A 60 - - hFE2 (Note) VCE=-1V, IC=-2A 160 - 400 hFE 3 VCE=-2V, IC=-5A 50 - - Collector-Emitter Saturation Voltage * VCE(sat) IC=-2A, IB=-0.2A - -0.14 -0.3 V Base-Emitter Saturation Voltage VBE(sat) IC=-2A, IB=-0.2A - -0.9 -1.2 V - 0.15 1 - 0.78 2.5 - 0.18 1 Emitter Cut-off Current DC Current Gain * * OUTPUT ton Turn On Time I B2 INPUT 0 Switching Time tstg Storage Time 350 S, Note) hFE(2) Classification : 2003. 3. 27 I B2 S 20µsec tf Fall Time * Pulse test : PW IB1 I B1 5Ω Collector Cut-off Current -IB1 =IB2=0.2A DUTY CYCLE < = 1% VCC =-10V Duty Cycle 2% Pulse O:160 320, Y:200 400. Revision No : 3 1/3 KTA1385D/L d T - TC Pc - Ta 160 POWER DISSIPATION PC (W) 25 140 I C DERATING dT (%) 20 15 Tc =2 10 5 C 5 100 S/b Lim Di ited ssi pa tio nL im ite d 80 60 40 20 Ta=25 C 0 120 0 50 0 100 150 200 250 0 AMBIENT TEMPERATURE Ta ( C) -10 -0.5 * SINGLE NONREPETIVE PULSED Tc=25 C CURVES MUST BE DERATED LINERLY WITH INCREASE IN TEMPERATURE -0.3 -0.1 -1 -3 -5 -30 -50 -10 75 150 175 200 -6 -4 -2 0 -100 REVERSE BIAS SAFE OPERATING AREA -40 -20 -60 -80 -100 COLLECTOR-EMITTER VOLTAGE VCE (V) I C - V CE h FE - I C 1k -10 mA -6 00 I B =-40mA I B =-30mA =-2 -4 DC CURRENT GAIN h FE A 0m A A -15 00m =-80m 1 I B= = B I I B =-60mA IB -8 I B =-20mA IB COLLECTOR CURRENT I C (A) 125 -8 COLLECTOR-EMITTER VOLTAGE VCE (V) I B =-10mA -2 I B =0mA 0 -0.4 -0.8 -1.2 -1.6 COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 3. 27 100 VCEO (SUS) -1 COLLECTOR CURRENT I C (A) IC MAX. -3 2m S 10 mS * * 20 Di 0m ss i S* S/ pati b L on im Li ite mi d ted VCEO MAX. COLLECTOR CURRENT I C (A) -10 -5 50 CASE TEMPERATURE Tc ( C) SAFE OPERATING AREA I C (Pulse)MAX.* 25 Revision No : 3 -2.0 500 300 VCE =-2V 100 VCE =-1V 50 30 10 5 3 1 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 COLLECTOR CURRENT I C (A) 2/3 KTA1385D/L VBE(sat), VCE(sat) - I C SATURATION VOLTAGE VBE(sat), V CE(sat) (V) -10 I C /I B =10 -5 -3 VBE(sat) -1 -0.5 -0.3 -0.1 VCE(sat) -0.05 -0.03 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 COLLECTOR CURRENT I C (A) 2003. 3. 27 Revision No : 3 3/3