NEC 2SC4552L

DATA SHEET
SILICON POWER TRANSISTOR
2SC4552
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4552 is a power transistor developed for high-speed
PACKAGE DRAWING (UNIT: mm)
switching and features low VCE(sat) and high hFE. This transistor is
ideal for use in drivers such as DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 (VCE = 2 V, IC = 3 A)
VCE(sat) ≤ 0.3 V (IC = 8 A, IB = 0.4 A)
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Electrode Connection
1. Base
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
15
A
IC(pulse)*
30
A
IB(DC)
7.5
A
Total power dissipation
PT (Tc = 25°C)
30
W
Total power dissipation
PT (Ta = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
2. Collector
3. Emitter
Collector current (pulse)
Base current (DC)
* PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15598EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SC4552
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Collector to emitter voltage
VCEO(SUS)
IC = 8.0 A, IB = 0.8 A, L = 1 mH
60
V
Collector to emitter voltage
VCEX(SUS)
IC = 8.0 A, IB1 = −IB2 = 0.8 A,
VBE(OFF) = −1.5 V, L = 180 µH, clamped
60
V
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
10
µA
Collector cutoff current
ICER
VCE = 60 V, RBE = 50 Ω, Ta = 125°C
1.0
mA
Collector cutoff current
ICEX1
VCE = 60 V, VBE(OFF) = −1.5 V
10
µA
Collector cutoff current
ICEX2
VCE = 60 V, VBE(OFF) = −1.5 V,
Ta = 125°C
1.0
mA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
10
µA
DC current gain
hFE1*
VCE = 2.0 V, IC = 1.5 A
100
DC current gain
hFE2*
VCE = 2.0 V, IC = 3.0 A
100
DC current gain
hFE3*
VCE = 2.0 V, IC = 8.0 A
60
400
Collector saturation voltage
VCE(sat)1*
IC = 8.0 A, IB = 0.4 A
0.3
V
Collector saturation voltage
VCE(sat)2*
IC = 12 A, IB = 0.6 A
0.5
V
Base saturation voltage
VBE(sat)1*
IC = 8.0 A, IB = 0.4 A
1.2
V
Base saturation voltage
VBE(sat)2*
IC = 12 A, IB = 0.6 A
1.5
V
Collector capacitance
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
180
pF
120
MHz
Gain bandwidth product
fT
VCE = 10 V, IC = 1.5 A
Turn-on time
ton
Storage time
tstg
IC = 8.0 A, RL = 6.3 Ω,
IB1 = −IB2 = 0.4 A, VCC ≅ 50 V
0.3
µs
1.5
µs
0.3
µs
Refer to the test circuit.
Fall time
tf
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
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Data Sheet D15598EJ2V0DS
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2SC4552
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