DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SA1836 PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SA1836 is PNP silicon epitaxial transistor. 0.1 +0.1 –0.05 0.3 ± 0.05 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −50 V Emitter to Base Voltage VEBO −5.0 V IC(DC) −100 mA IC(pulse) −200 mA PT 200 mW Tj 150 °C Tstg –55 to + 150 °C Collector Current (DC) Collector Current (pulse) Note1 Total Power Dissipation (TA = 25°C) Note2 Junction Temperature Storage Temperature Range 3 0.8 ± 0.1 1.6 ± 0.1 • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = −50 V 0 to 0.1 1 2 0.2 +0.1 –0 0.6 0.5 0.5 1.0 1.6 ± 0.1 0.75 ± 0.05 1: Emitter 2: Base 3: Collector Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2 2. When mounted on ceramic substrate of 3.0 cm x 0.64 mm ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB = −60 V, IE = 0 −100 nA Emitter Cut-off Current IEBO VEB = −5.0 V, IC = 0 −100 nA hFE1 VCE = −6.0 V, IC = −0.1 mA 50 hFE2 VCE = −6.0 V, IC = −1.0 mA 90 VBE VCE = −6.0 V, IC = −1.0 mA −0.62 VCE(sat) IC = −100 mA, IB = −10 mA −0.18 −0.3 V VBE(sat) IC = −100 mA, IB = −10 mA −0.86 −1.0 V DC Current Gain Note Base to Emitter Voltage Note Collector Saturation Voltage Base Saturation Voltage Note Note Gain Bandwidth Product fT Output Capacitance Cob VCE = −6.0 V, IE = 10 mA 50 VCE = −6.0 V, IE = 0, f = 1.0 MHz − 200 600 V 180 4.5 − MHz 6.0 pF Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% hFE CLASSFICATION Marking M4 M5 M6 M7 hFE2 90 to 180 135 to 270 200 to 400 300 to 600 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15615EJ1V0DS00 (1st edition) Date Published July 2001 NS CP(K) Printed in Japan © 2001 2SA1836 TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE −100 Free air nte do nc er 150 am ic su bs tra te 100 of 3.0 0 −100 cm 2 x0 .64 50 25 50 75 100 −1 −0.3 −0.1 −0.01 −0.4 150 −0.7 −0.8 −0.9 −1.0 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE −8 −2.0 −1.8 IC - Collector Current - mA −1.4 −80 −1.2 −1.0 −0.8 −60 −0.6 −0.4 −40 IB = −0.2 mA −20 −0.2 −0.4 −0.6 −0.8 −1.0 −45 −35 −20 −20 −30 −40 10 Cob - Output Capacitance - pF f = 1.0 MHz −0.1 VCE(sat) −0.02 IC = 10 . IB −2 −10 OUTPUT CAPACITANCE vs. REVERSE VOLTAGE VBE(sat) −0.2 −0.01 −1 −15 −10 IB = −5.0 µA −2 VCE - Collector to Emitter Voltage - V −0.5 −0.05 −30 −25 −4 0 COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT −1 −40 −6 VCE - Collector to Emitter Voltage - V VBE(sat) - Base Saturation Voltage - V VCE(sat) - Collector Saturation Voltage - V −0.6 VBE - Base to Emitter Voltage - V 0 −5 −10 −20 −50 −100 5 2 1 0.5 0.2 0.1 −1 IC - Collector Current - mA 2 −0.5 TA - Ambient Temperature - ˚C −1.6 IC - Collector Current - mA −3 −0.03 mm 125 −10 –25 ˚C ou 5˚C nm 25 ˚C he =7 W TA 250 200 VCE = −6.0 V −30 IC - Collector Current - mA PT - Total Power Dissipation - mW 300 −2 −5 −10 −20 −50 VCB - Collector to Base Voltage - V Data Sheet D15615EJ1V0DS −100 2SA1836 DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 1000 500 hFE - DC Current Gain hFE - DC Current Gain 500 VCE = −6 V 200 −1 V 100 50 20 10 −0.1 VCE = −6.0 V TA = 75˚C 25˚C −25˚C 200 100 50 20 −0.3 −1 −3 −10 −30 −100 10 −0.1 −0.3 IC - Collector Current - mA −1 −3 −10 −30 −100 IC - Collector Current - mA GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT fT - Gain Bandwidth Product - MHz 1000 500 200 VCE = −6 V 100 −1 V 50 20 10 1 2 5 10 20 50 100 IE - Emitter Current - mA Data Sheet D15615EJ1V0DS 3 2SA1836 • The information in this document is current as of July, 2001. 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