NEC 2SD2383

DATA SHEET
SILICON TRANSISTOR
2SD2383
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE SWITCHING
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
The 2SD2383 is an element realizing high voltage in small
2.8 ±0.2
+0.1
0.4 –0.05
dimension. This transistor is ideal for downsizing sets
requiring high voltage.
+0.1
0.65 –0.15
1.5
3
0.4 +0.1
–0.05
• Small dimension
0.95
2.9 ±0.2
• High voltage
0.95
2
FEATURES
1
ORDERING INFORMATION
SC-59
0.16 +0.1
–0.06
2SD2383
1.1 to 1.4
PACKAGE
0.3
Marking
PART NUMBER
0 to 0.1
Marking: N1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
400
V
Collector to Emitter Voltage
VCEO
300
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC(DC)
20
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
1. Emitter
2. Base
3. Collector
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16154EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
2SD2383
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 200 V, IE = 0 A
100
nA
Emitter Cut-off Current
IEBO
VEB = 5.0 V, IC = 0 A
100
nA
DC Current Gain
hFE
VCE = 6.0 V, IC = 5 mA
250
−
100
Collector Saturation Voltage
VCE(sat)
IC = 5.0 mA, IB = 0.5 mA
85
500
mV
Base Saturation Voltage
VBE(sat)
IC = 5.0 mA, IB = 0.5 mA
0.68
1.0
V
Gain Bandwidth Product
fT
VCE = 30 V, IE = −10 mA
90
MHz
VCB = 30 V, IE = 0, f = 1 MHz
1.3
pF
Output Capacitance
Cob
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
250
100
−25˚
C
C
1
600
700
0.5
0.2
25
50
75
100
125
800
900
1000
VBE - Base to Emitter Voltage - mV
DC CURRENT GAIN vs.
COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
VCE = 6.0 V
500
TA = 75˚C
25˚C
−25˚C
100
50
20
10
0.1 0.2
500
TA - Ambient Temperature - ˚C
1000
200
0.1
400
150
0.5
1
2
5
10 20
50 100
VCE(sat) - Collector Saturation Voltage - mV
0
hFE - DC Current Gain
2
C
50
5
25˚
100
10
75˚
150
20
TA =
200
0
1000
IC = 10.IB
500
TA = 75˚C
25˚C
−25˚C
200
100
50
20
10
0.1 0.2
IC - Collector Current - mA
2
VCE = 6.0 V
50
IC - Collector Current - mA
PT - Total Power Dissipation - W
Free air
0.5
1
2
5
10 20
IC - Collector Current - mA
Data Sheet D16154EJ2V0DS
50 100
2SD2383
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
500
200
100
50
20
10
10
VCE = 30 V
Cob - Output Capacitance - pF
fT - Gain Bandwidth Product - MHz
1000
OUTPUT CAPACITANCE vs.
REVERSE VOLTAGE
−1
−2
−5
−10
−20
−50
−100
f = 1.0 MHz
5
2
1
0.5
0.2
0.1
IE - Emitter Current - mA
1
2
5
10
20
50
100
VCB - Collector to Base Voltage - V
Data Sheet D16154EJ2V0DS
3
2SD2383
• The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1