DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard Miniature Package • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 2SD1115A in millimeters 4.5 ± 0.1 B 4.0 ± 0.25 C E 2.5 ± 0.1 V V V A A 0.8 MIN. Maximum Voltages and Currents (TA = 25°C) 2SD1615 2SD1615A Collector to Base Voltage VCBO 60 120 50 60 Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO 6 1 Collector Current (DC) IC IC 2 Collector Current (Pulse)∗ Maximum Power Dissipation Total Power Dissipation PT 2.0 at 25°C Ambient Temperature∗∗ Maximum Temperatures 150 Junction Temperature Tj Storage Temperature Range Tstg –55 to +150 ∗ 1.5 ± 0.1 1.6 ± 0.2 ABSOLUTE MAXIMUM RATINGS 0.42 ± 0.06 0.42 ± 0.06 1.5 W 0.47 ± 0.06 3.0 °C °C 0.41+– 0.03 0.05 1. Emitter 2. Collector 3. Base PW ≤ 10 ms, Duty Cycle ≤ 50% When mounted on ceramic substrate of 16 cm2 × 0.7 mm ∗∗ ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC Collector Cutoff Current SYMBOL MIN. TYP. ICBO MAX. UNIT 100 nA 2SD1615 VCB = 60 V, IE = 0 100 nA 2SD1615A VCB = 120 V, IE = 0 100 nA Emitter Cutoff Current IEBO DC Current Gain hFE1∗∗∗ DC Current Gain hFE2∗∗∗ Collector Saturation Voltage VCE(sat)∗∗∗ 0.15 0.3 V Base Saturation Voltage VBE(sat)∗∗∗ 0.9 1.2 V Base to Emitter Voltage VBE∗∗∗ 600 700 mV Gain Bandwidth Product Output Capacitance fT Cob 80 135 290 135 ∗∗∗ 81 600 TEST CONDITIONS VEB = 6.0 V, IC = 0 2SC1615 400 VCE = 2.0 V, IC = 100 mA 2SD1615A 270 VCE = 2.0 V, IC = 1.0 A 160 19 MHz pF IC = 1.0 A, IB = 50 mA IC = 1.0 A, IB = 50 mA VCE = 2.0 V, IC = 50 mA VCE = 2.0 V, IE = –100 mA VCB = 10 V, IE = 0, f = 1.0 MHz Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2 % hFE Classification MARKING 2SD1615 GM GL 2SD1615A GQ GP 135 to 270 200 to 400 h FE GK 300 to 600 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. D10198EJ4V0DS00 (4th edition) Date Published December 2000 N CP(K) Printed in Japan © 1985 2SD1615, 2SD1615A TYPICAL CHARACTERISTICS (TA = 25°C) SAFE OPERATING AREA (TRANSIENT THERMAL RESISTANCE METHOD) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 5 ms =1 PW s m 10 2 nm he 2.0 1 pulse W nte nc do 1.5 mi era cs ate str ub 1.0 of 16 0 0.5 m s D 0.2 C 0.1 .7 ×0 0.05 mm 0 0.02 40 80 120 160 TA – Ambient Temperature – °C 200 0.01 1 2 5 10 20 50 VCE – Collector to Emitter Voltage – V 1.0 300 µA 200 µA 5.0 mA 4.5 mA 200 µA 60 150 µA 100 µA IB = 50 µA 20 0 mA 3.5 2 4 6 8 10 1.5 mA 0.4 200 100 50 20 10 5 1 IB = 0.5 mA 0.2 0 2 5 10 VCE(sat) – Collector Saturation Voltage – V VBE(sat) – Base Saturation Voltage – V VCE = 2.0 V 0.5 1.0 mA 0.2 0.4 0.6 0.8 1.0 COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT 500 0.05 0.1 0.2 2.5 mA VCE(sat) – Collector Saturation Voltage – V 1000 0.01 0.02 3.0 mA 2.0 mA DC CURRENT GAIN vs. COLLECTOR CURRENT hEF – DC Current Gain m 0.6 VCE – Collector to Emitter Voltage – V IC = 20·IB 2 1 VBE(sat) 0.5 0.2 0.1 t) sa 0.05 E( VC 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1 IC – Collector Current – A IC – Collector Current – A 2 A 0 4. 0.8 IC – Collector Current – A IC – Collector Current – mA 80 40 100 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 2SD1615A 2 cm 0.5 20 2SD1615 IC – Collector Current – A 1 ou PT – Total Power Dissipation – W 2.5 Data Sheet D10198EJ4V0DS00 2 5 10 2SD1615, 2SD1615A GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT 1000 OUTPUT CAPCITANCE vs. COLLECTOR TO BASE VOLTAGE 100 VEC = 2.0 V Cob – Output Capacitance – pF fT – Gain Bandwidth Product – MHZ 500 200 100 50 20 10 5 50 IE = 0 f = 1.0 MHZ 20 10 5 2 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 IC – Collector Current – A 5 10 1 2 5 10 20 50 VCB – Collector to Base Voltage – V 100 SWITCHING TIME vs. COLLECTOR CURRENT 2 t – Switching Time – µs 1 VCC = 10 V IC = 10.IBI = –10.IB2 VBE(off) to 3 V . 2= µ–2 PW = s . Duty Cycle ≤ 2 % tstg 0.5 0.2 0.1 0.05 tf ton 0.01 0.02 0.05 0.1 0.2 IC – Collector Current – A 0.5 1 Data Sheet D10198EJ4V0DS00 3 2SD1615, 2SD1615A [MEMO] • The information in this document is current as of October, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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