DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4811 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SC4811 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. FEATURES • Auto-mounting possible in radial taping specifications • Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions • On-chip C-to-E reverse diode • Fast switching speed ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 8.0 V Collector current (DC) IC(DC) ±8.0 A IC(pulse)* ±16 A Base current (DC) IB(DC) 0.8 A Total power dissipation PT** 1.8 W Collector current (pulse) Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C * PW ≤ 300 µs, duty cycle ≤ 10% ** Ta = 25°C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15602EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC4811 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. TYP. Unit Collector cutoff current ICBO VCB = 100 V, IE = 0 1.0 µA Emitter cutoff current IEBO VEB = 5 V, IC = 0 5.0 mA DC current gain hFE1* VCE = 2.0 V, IC = 4.0 A 2,000 DC current gain hFE2* VCE = 2.0 V, IC = 8.0 A 500 Collector saturation voltage VCE(sat)* IC = 4.0 A, IB = 4.0 mA 1.5 V Base saturation voltage VBE(sat)* IC = 4.0 A, IB = 4.0 mA 2.0 V Turn-on time ton Storage time tstg IC = 4.0 A, IB1 = −IB2 = 4.0 mA RL = 12.5 Ω, VCC ≅ 50 V 20,000 0.5 µs 2.5 µs 0.6 µs 45 pF Refer to the test circuit. Fall time tf Collector capacitance Cob VCB = 10 V, IE = 0 , f = 1 MHz * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE1 2,000 to 5,000 4,000 to 10,000 8,000 to 20,000 PACKAGE DRAWING (UNIT: mm) TAPING SPECIFICATION Electrode Connection 1. Base 2. Collector 3. Emitter 2 MAX. Data Sheet D15602EJ2V0DS 2SC4811 IC Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25°°C) Single pulse Case Temperature Ta (°C) Transient Thermal Resistance Rth(j-a) (°C/W) Collector Current IC (A) Ambient Temperature Ta (°C) Pulse Width PW (s) Collector Current IC (A) Collector Current IC (A) Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Base to Emitter Voltage VBE (V) Data Sheet D15602EJ2V0DS 3 Collector Capacitance Cob (pF) 4 Fall Time tf (µs) StorageTime tstg (µs) Turn-On Time ton (µs) Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) DC Current Gain hFE 2SC4811 Collector Current IC (A) Collector Current IC (A) Collector Current IC (A) Collector Current IC (A) Collector to Base Voltage VCB (V) Data Sheet D15602EJ2V0DS 2SC4811 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform Data Sheet D15602EJ2V0DS 5 2SC4811 • The information in this document is current as of July, 2001. 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