DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING (UNIT: mm) collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES • High hFE and low VCE(sat): hFE ≅ 800 (VCE = 2 V, IC = 3 A) VCE(sat) ≅ 0.12 V (IC = 3 A, IB = 0.03 A) • On-chip C to E damper diode • Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) ±7.5 A IC(pulse)* ±10 A IB(DC) 2.0 A Total power dissipation PT (Tc = 25°C) 30 W Total power dissipation PT (Ta = 25°C) 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C (OHFWURGH&RQQHFWLRQ %DVH Collector current (pulse) Base current (DC) &ROOHFWRU (PLWWHU (48,9$/(17&,5&8,7 * PW ≤ 10 ms, duty cycle ≤ 50% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. 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