'$7$6+((7
6,/,&2132:(575$16,6725
6$6$=
3136,/,&21(3,7$;,$/75$16,6725
)25+,*+63(('6:,7&+,1*
The 2SA1647 is a mold power transistor developed for high-
PACKAGE DRAWING (UNIT: mm)
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
hybrid IC.
• Low collector saturation voltage:
VCE(sat) = −0.3 V MAX. (@IC = −3 A)
• Fast switching speed:
tf = 0.4 µs MAX. (@IC = −3 A)
• High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (TA = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−150
V
Collector to emitter voltage
VCEO
−100
V
Base to emitter voltage
VEBO
−7.0
V
Collector current (DC)
IC(DC)
−5.0
A
IC(pulse)*
−10
A
IB(DC)
−2.5
A
Total power dissipation
PT (Tc = 25 °C)
18
W
Total power dissipation
PT (TA = 25 °C)
1.0**, 2.0***
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Collector current (pulse)
Base current (DC)
*:
(OHFWURGH&RQQHFWLRQ
%DVH
&ROOHFWRU
(PLWWHU
PW ≤ 10 ms, duty cycle ≤ 50%
**: Printing board mounted
***: 7.5 mm × 0.7 mm ceramic board mounted
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
'RFXPHQW1R'(-9'6QGHGLWLRQ
'DWH3XEOLVKHG$SULO1&3.
3ULQWHGLQ-DSDQ
©
2002
2SA1647, 2SA1647-Z
ELECTRICAL CHARACTERISTICS (TA = 25°°C)
Parameter
Symbol
Conditions
MIN.
Collector to emitter voltage
VCEO(SUS)
IC = −2.5 A, IB = −0.25 A, L = 1 mH
Collector to emitter voltage
VCEX(SUS)
IC = −2.5 A, IB1 = −IB2 = −0.25 A,
VBE(OFF) = 1.5 V, L = 180 µH, clamped
MAX.
Unit
V
−100
V
Collector cutoff current
ICBO
VCB = −100 V, IE = 0
−10
µA
Collector cutoff current
ICER
VCE = −100 V, RBE = 50 Ω, TA = 125 °C
−1.0
mA
Collector cutoff current
ICEX1
VCE = −100 V, VBE(OFF) = 1.5 V
−10
µA
Collector cutoff current
ICEX2
VCE = −100 V, VBE(OFF) = 1.5 V,
TA = 125 °C
−1.0
mA
Emitter cutoff current
IEBO
VEB(OFF) = −5.0 V, IC = 0
−10
µA
DC current gain
hFE1*
VCE = −2.0 V, IC = −0.5 A
100
DC current gain
hFE2*
VCE = −2.0 V, IC = −1.0 A
100
DC current gain
hFE3*
VCE = −2.0 V, IC = −3.0 A
60
Collector saturation voltage
VCE(sat)1*
IC = −3.0 A, IB = −0.15 A
−0.3
V
Collector saturation voltage
VCE(sat)2*
IC = −4.0 A, IB = −0.2 A
−0.5
V
Base saturation voltage
VBE(sat)1*
IC = −3.0 A, IB = −0.15 A
−1.2
V
Base saturation voltage
VBE(sat)2*
IC = −4.0 A, IB = −0.2 A
−1.5
V
Collector capacitance
Cob
400
VCB = −10 V, IE = 0, f = 1.0 MHz
110
pF
90
MHz
Gain bandwidth product
fT
VCE = −10 V, IC = 0.5 A
Turn-on time
ton
Storage time
tstg
IC = −3.0 A, RL = 17 Ω,
IB1 = −IB2 = −0.15 A, VCC ≅ −50 V
Refer to the test circuit.
Fall time
tf
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/Pulsed
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
TYP.
−100
Data Sheet D14839EJ2V0DDS
0.3
µs
1.5
µs
0.4
µs
2SA1647, 2SA1647-Z
IC Derating dT (%)
Total Power Dissipation PT (W)
TYPICAL CHARACTERISTICS (TA = 25°°C)
Case Temperature TC (°C)
Collector Current IC (A)
Single pulse
Collector to Emitter Voltage VCE (V)
Transient Thermal Resistance rth(j−c) (t) (°C/W)
Case Temperature TC (°C)
Single pulse
Pulse Width PW (s)
DC Current Gain hFE
Collector Current IC (A)
Pulse test
Collector to Emitter Voltage VCE (V)
Data Sheet D14839EJ2V0DDS
Collector Current IC (A)
3
Pulse test
Base Saturation Voltage VBE(sat) (V)
Collector Saturation Voltage VCE(sat) (V)
2SA1647, 2SA1647-Z
Collector Current IC (A)
Gain Bandwidth Product fT
Collector Capacitance Cob (pF)
Collector Current IC (A)
Collector to Base Voltage VCB (V)
Turn-On Time ton (µs)
StorageTime tstg (µs)
Fall Time tf (µs)
Collector Current IC (A)
Collector Current IC (A)
4
Pulse test
Data Sheet D14839EJ2V0DDS
2SA1647, 2SA1647-Z
[MEMO]
Data Sheet D14839EJ2V0DDS
5
2SA1647, 2SA1647-Z
• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4