NEC 2SD1695

DATA SHEET
SILICON POWER TRANSISTOR
2SD1695
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD1695 is a Darlington connection transistor and
PACKAGE DRAWING (UNIT: mm)
incorporates a dumper diode between the collector and emitter and
a constant voltage diode and protection elements between the
collector and base. This transistor is ideal for drives in solenoid and
actuators.
FEATURES
• On-chip protection elements enable time and cost reduction.
C to E: Dumper diode
C to B: Constant diode
• Low collector saturation voltage
QUALITY GRADES
• Standard
Electrode Connection
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
1. Emitter
2. Collector
3. Base
4. Collector (fin)
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
31 ±4
V
Collector to emitter voltage
VCEO
31 ±4
V
Emitter to base voltage
VEBO
8.0
V
Collector current (DC)
IC(DC)
±2.0
A
IC(pulse)*
±3.0
A
IB(DC)
0.2
A
Total power dissipation
PT (Ta = 25°C)
1.3
W
Total power dissipation
PT (Tc = 25°C)
10
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Collector current (pulse)
Base current (DC)
* PW ≤ 10 ms, duty cycle ≤ 50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16138EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SD1695
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Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Collector to base voltage
VCBO
IC = 1.0 mA, IE = 0
27
31
35
V
Collector to emitter voltage
VCEO
IC = 10 mA, RBE = ∞
27
31
35
V
Collector cutoff current
ICBO
VCB = 20 V, IE = 0
10
µA
DC current gain
hFE1*
VCE = 2.0 V, IC = 0.5 A
1,000
DC current gain
hFE2*
VCE = 2.0 V, IC = 1.0 A
2,000
Collector saturation voltage
VCE(sat)*
IC = 1.0 A, IB = 1.0 mA
0.9
1.2
V
Base saturation voltage
VBE(sat)*
IC = 1.0 A, IB = 1.0 mA
1.6
2.0
V
IC = 1.0 A, IB1 = −IB2 = 5.0 mA
RL = 20 Ω, VCC ≅ 20 V
0.5
µs
3.0
µs
1.0
µs
Turn-on time
ton
Storage time
tstg
Fall time
tf
30,000
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2SD1695
• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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