DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment. FEATURES • High DC current amplifiers due to darlington connection • Large current capacitance and low VCE(sat) • TO-126 power transistor with high power dissipation • Complementary transistor with 2SC4342 QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO −100 V Collector to emitter voltage VCEO −100 V Emitter to base voltage VEBO −8.0 V IC(DC) – +3.0 A IC(pulse)* – +6.0 A IB(DC) −0.3 A Total power dissipation PT (Ta = 25°C) 1.3 W Total power dissipation PT (Tc = 25°C) 12 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (DC) Collector current (pulse) Base current (DC) Electrode Connection 1. Emitter 2. Collector 3. Base 4. Fin (collector) * PW ≤ 10 ms, duty cycle ≤ 50% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16124EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 2SA1714 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Collector to emitter voltage VCEO(SUS) Conditions MIN. IC = −3.0 A, IB = −3.0 mA, L = 1.0 mH TYP. −100 Unit V Collector cutoff current ICBO VCB = −100 V, IE = 0 −10 µA Collector cutoff current ICEO VCE = −100 V, RBE = ∞ −10 µA 20,000 − DC current gain hFE1** VCE = −2.0 V, IC = −1.5 A 2,000 DC current gain hFE2** VCE = −2.0 V, IC = −3.0 A 1,000 Collector saturation voltage VCE(sat)** IC = −1.5 A, IB = −1.5 mA −0.9 −1.2 V Base saturation voltage VBE(sat)** IC = −1.5 A, IB = −1.5 mA −1.5 −2.0 V IC = −1.5 A, IB1 = −IB2 = −1.5 mA, RL = 33 Ω, VCC ≅ −50 V 0.15 µs 1.2 µs 0.6 µs Turn-on time ton Storage time tstg − Refer to the test circuit. Fall time tf ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/pulsed hFE CLASSIFICATION Marking M L K hFE1 2,000 to 5,000 4,000 to 10,000 8,000 to 20,000 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 MAX. Data Sheet D16124EJ1V0DS 2SA1714 TYPICAL CHARACTERISTICS (Ta = 25°°C) With infinite heatsink Without heatsink Data Sheet D16124EJ1V0DS 3 2SA1714 4 Data Sheet D16124EJ1V0DS 2SA1714 [MEMO] Data Sheet D16124EJ1V0DS 5 2SA1714 • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4