DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1890 N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1890 is a switching device which can be driven directly by a 4.0-V power source. The µPA1890 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit : mm) 8 5 1 2, 3 4 5 6, 7 8 FEATURES PACKAGE µPA1890GR-9JG Power TSSOP8 0.5 0.1±0.05 1 0.6 +0.15 –0.1 4 6.4 ±0.2 3.15 ±0.15 3.0 ±0.1 0.27 +0.03 –0.08 PART NUMBER 0.25 3° +5° –3° 0.65 ORDERING INFORMATION 1.2 MAX. 1.0±0.05 4.4 ±0.1 0.145 ±0.055 • Can be driven by a 4.0-V power source • Low on-state resistance N-Channel RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 37 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 47 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) P-Channel RDS(on)1 = 37 mΩ MAX. (VGS = –10 V, ID = –2.5 A) RDS(on)2 = 56 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)3 = 64 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A) • Built-in G-S protection diode against ESD :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2 1.0 ±0.2 0.1 0.8 MAX. 0.10 M EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain1 Drain2 N-Channel / P-Channel Drain to Source Voltage VDSS 30/–30 V Gate to Source Voltage VGSS ±20/ # 20 V Drain Current (DC) ID(DC) ±6.0/ # 5.0 A ID(pulse) ±24/ # 20 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark Body Diode Gate1 Gate Protection Diode Source1 Body Diode Gate2 Gate Protection Diode N-Channel Source2 P-Channel To keep good radiate condition, it is recommended that all pins are soldering to print board. The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14762EJ1V0DS00 (1st edition) Date Published March 2000 NS CP(K) Printed in Japan © 2000 µPA1890 ELECTRICAL CHARACTERISTICS (TA = 25 °C) A) N-Channel CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current I DSS VDS = 30 V, VGS = 0 V –10 µA Gate Leakage Current IGSS VGS = ±16 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.5 1.8 2.5 V | yfs | VDS = 10 V, ID = 3.0 A 3 7.6 RDS(on)1 VGS = 10 V, ID = 3.0 A 18 27 mΩ RDS(on)2 VGS = 4.5 V, ID = 3.0 A 24 37 mΩ RDS(on)3 VGS = 4.0 V, ID = 3.0 A 27 47 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 748 pF Output Capacitance Coss VGS = 0 V 227 pF Reverse Transfer Capacitance Crss f = 1 MHz 107 pF Turn-on Delay Time td(on) VDD = 15 V 20 ns tr ID = 3.0 A 80 ns VGS(on) = 10 V 48 ns tf RG = 10 Ω 30 ns Total Gate Charge QG VDD = 24 V 14 nC Gate to Source Charge QGS ID = 6.0 A 1.9 nC Gate to Drain Charge QGD VGS = 10 V 3.8 nC Rise Time Turn-off Delay Time td(off) Fall Time Diode Forward Voltage VF(S-D) IF = 6.0 A, VGS = 0 V 0.82 V Reverse Recovery Time trr IF = 6.0 A, VGS = 0 V 31 ns Reverse Recovery Charge Qrr di/dt = 100 A / µs 32 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG PG. VGS VGS Wave Form 0 PG. 90 % 90 % ID VGS 0 ID 10 % 0 10 % Wave Form τ τ = 1 µs Duty Cycle ≤ 1 % tr td(off) td(on) ton RL 50 Ω VDD 90 % VDD ID 2 VGS(on) 10 % IG = 2 mA tf toff Data Sheet G14762EJ1V0DS00 µPA1890 B) P-Channel CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current I DSS VDS = –30 V, VGS = 0 V –10 µA Gate Leakage Current IGSS VGS = # 16 V, VDS = 0 V # 10 µA VGS(off) VDS = –10 V, ID = –1 mA –1.3 –1.8 –2.3 V | yfs | VDS = –10 V, ID = –2.5 A 3 7.8 RDS(on)1 VGS = –10 V, ID = –2.5 A 28 37 mΩ RDS(on)2 VGS = –4.5 V, ID = –2.5 A 42 56 mΩ RDS(on)3 VGS = –4.0 V, ID = –2.5 A 47 64 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = –10 V 851 pF Output Capacitance Coss VGS = 0 V 279 pF Reverse Transfer Capacitance Crss f = 1 MHz 128 pF Turn-on Delay Time td(on) VDD = –15 V 17 ns tr ID = –2.5 A 52 ns VGS(on) = –10 V 84 ns RG = 10 Ω 73 ns Rise Time Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = –24 V 15 nC Gate to Source Charge QGS ID = –5.0 A 1.9 nC Gate to Drain Charge QGD VGS = –10 V 4.2 nC Diode Forward Voltage VF(S-D) IF = 5.0 A, VGS = 0 V 0.83 V Reverse Recovery Time trr IF = 5.0 A, VGS = 0 V 38 ns Reverse Recovery Charge Qrr di/dt = 50 A / µs 35 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG PG. VGS (−) VGS Wave Form 0 VGS(on) 10 % RL 50 Ω VDD 90 % PG. VDD ID (−) IG = −2 mA 90 % 90 % ID VGS (−) 0 ID 10 % 0 10 % Wave Form τ τ = 1 µs Duty Cycle ≤ 1 % tr td(off) td(on) ton tf toff Data Sheet G14762EJ1V0DS00 3 µPA1890 TYPICAL CHARACTERISTICS (TA = 25°C) A) N-Channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 100 ited im V) 0 =1 80 60 40 (@ 10 30 60 90 120 TA - Ambient Temperature - ˚C 0.1 ms VDS = 10 V 10 ID - Drain Current - A VGS = 10 V 4.5 V 4.0 V 15 100 TRANSFER CHARACTERISTICS 100 Pulsed 20 10 1 VDS - Drain to Source Voltage - V 25 ID - Drain Current - A =1 10 0m DC s 1 150 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 5 1 0.1 TA = −25˚C 25˚C 75˚C 125˚C 0.01 0.001 0.0001 0.00001 0 0 0.2 0.4 0.6 0.8 0 1.0 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 100 | yfs | - Forward Transfer Admittance - S 2 1 0 Tch 50 100 - Channel Temperature -˚C 2 3 4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V ID = 1 mA 0 −50 1 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V VGS(off) - Gate to Source Cut-off Voltage - V 10 ms Single Pulse Mounted on Ceramic Substrate of 5000 mm2x 1.1 mm 0.01 PD(FET1):PD(FET2) = 1:1 0 4 PW ID (DC) 0.1 20 3 ID (pulse) L n) S(o RD VGS ID - Drain Current - A dT - Derating Factor - % 100 150 VDS = 10 V 10 TA = −25˚C 25˚C 75˚C 125˚C 1 0.1 0.01 0.01 Data Sheet G14762EJ1V0DS00 0.1 1 10 ID - Drain Current - A 100 40 TA = 125˚C 75˚C 30 25˚C 25˚C 20 10 0 0.1 1.0 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 VGS = 10 V 30 TA = 125˚C 75˚C 20 25˚C 25˚C 10 0 0.1 1.0 10 100 RDS(on) - Drain to Source On-State Resistance - mΩ 50 RDS (on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = 4.0 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 VGS = 4.5 V 40 TA = 125˚C 75˚C 30 25˚C 20 25˚C 10 0 0.1 1.0 50 ID = 3.0 A 40 VGS = 4.0 V 4.5 V 30 10 V 20 10 −50 0 50 100 Tch - Channel Temperature -˚C 30 20 10 0 150 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 50 40 100 DRAIN TO SOURCE ON STATE RESISTANCE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID = 3.0 A 10 ID - Drain Current - A ID - Drain Current - A 10000 Ciss, Coss, Crss - Capacitance - pF RDS (on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ µPA1890 f = 1 MHz 1000 Ciss Coss 100 Crss 10 0 5 10 15 20 1 10 100 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V Data Sheet G14762EJ1V0DS00 5 µPA1890 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 100 VDD = 15 V VGS(on) = 10 V RG =10 Ω IF - Source to Drain Current - A td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS tf 100 tr td(off) td(on) 10 1 0.1 1 10 10 1 0.1 0.01 0.4 ID - Drain Current - A VGS - Gate to Source Voltage - V ID = 6.0 A 8 VDD = 6 V 15 V 24 V 6 4 2 0 0 2 4 6 8 10 12 QG - Gate Charge - nC 6 0.8 1.0 VF(S-D) - Source to Drain Voltage - V DYNAMIC INPUT CHARACTERISTICS 10 VGS = 0 V 0.6 Data Sheet G14762EJ1V0DS00 1.2 µPA1890 B) P-Channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA −100 80 ID - Drain Current - A dT - Derating Factor - % 100 60 40 20 −10 V (@ 30 60 90 120 TA - Ambient Temperature - ˚C 10 ms ms 10 0m s −1 DC −0.1 −1 −10 −100 TRANSFER CHARACTERISTICS −100 VDS = −10 V −10 ID - Drain Current - A −15 =1 VDS - Drain to Source Voltage - V Pulsed VGS = −10 V −4.5 V −4.0 V −10 −5 −1 −0.1 TA = −25˚C 25˚C 75˚C 125˚C −0.01 −0.001 −0.0001 −0.00001 0 0 −0.2 −0.4 −0.6 −0.8 100 | yfs | - Forward Transfer Admittance - S −2 −1 Tch 50 100 - Channel Temperature -˚C −3 −4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = −10 V ID = −1 mA 0 −2 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 0 −50 −1 0 −1.0 VDS - Drain to Source Voltage - V VGS(off) - Gate to Source Cut-off Voltage - V PW ID (DC) −0.1 150 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE −20 −3 ID (pulse) Single Pulse Mounted on Ceramic Substrate of 5000 mm2x 1.1 mm −0.01 PD(FET1):PD(FET2) = 1:1 0 ID - Drain Current - A d ite ) im 0 V −1 )L on = S( RD GS 150 VDS = −10 V 10 TA = −25˚C 25˚C 75˚C 125˚C 1 0.1 0.01 −0.01 Data Sheet G14762EJ1V0DS00 −0.1 −1 −10 ID - Drain Current - A −100 7 TA = 125˚C 60 75˚C 25˚C 40 -25˚C 20 −0.1 −1.0 −10 −100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 VGS = −10 V TA = 125˚C 40 75˚C 30 25˚C 25˚C 20 10 −0.1 −1.0 −10 −100 RDS(on) - Drain to Source On-State Resistance - mΩ 80 RDS (on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = −4.0 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 VGS = −4.5 V 75˚C 25˚C 40 25˚C 20 0 −0.1 ID = −2.5 A 60 40 20 0 0 −5 −10 −15 −10 −100 DRAIN TO SOURCE ON STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 ID = −2.5 A VGS = −4.0 V 60 −4.5 V 40 −10 V 20 0 −50 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 −1.0 ID - Drain Current - A 0 50 100 Tch - Channel Temperature -˚C 150 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 f = 1 MHz 1000 −20 Ciss Coss 100 10 −1 Crss −10 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V 8 TA = 125˚C 60 ID - Drain Current - A Ciss, Coss, Crss - Capacitance - pF RDS (on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ µPA1890 Data Sheet G14762EJ1V0DS00 −100 µPA1890 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 VDD = −15 V VGS(on) = −10 V RG =10 Ω td(off) 1000 IF - Source to Drain Current - A 10000 td(on) tf tr 100 10 1 0.1 VGS = 0 V 10 −0.1 −1 −10 0.01 0.4 ID - Drain Current - A 0.6 0.8 1.0 1.2 VF(S-D) - Source to Drain Voltage - V DYNAMIC INPUT CHARACTERISTICS 10 VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS ID = 5.0 A 8 VDD = 6 V 15 V 24 V 6 4 2 0 0 2 4 6 8 10 12 14 16 QG - Gate Charge - nC Data Sheet G14762EJ1V0DS00 9 µPA1890 C) Common TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1000 62.5˚C/W 100 10 1 0.1 1m Mounted on Ceramic Substrate of 5000 mm2 x 1.1 mm Single Pulse PD(FET1):PD(FET2) = 1:1 10m 100m 1 PW - Pulse Width - S 10 Data Sheet G14762EJ1V0DS00 10 100 1000 µPA1890 [MEMO] Data Sheet G14762EJ1V0DS00 11 µPA1890 • The information in this document is subject to change without notice. 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