DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristic, and 2SK3113 TO-251 (MP-3) designed for high voltage applications such as switching 2SK3113-Z TO-252 (MP-3Z) power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) • Gate voltage rating ±30 V • Avalanche capability ratings (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±2.0 A ID(pulse) ±8.0 A PT1 20 W PT2 1.0 W Tch 150 °C Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Note2 Channel Temperature Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note3 IAS 2.0 A Single Avalanche Energy Note3 EAS 2.7 mJ (TO-252) Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm 3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D13336EJ3V0DS00 (3rd edition) Date Published August 2004 NS CP(K) Printed in Japan The mark shows major revised points. 1998, 2001 2SK3113 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 100 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V | yfs | VDS = 10 V, ID = 1.0 A 0.5 RDS(on) VGS = 10 V, ID = 1.0 A 3.3 Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Ω 4.4 Input Capacitance Ciss VDS = 10 V 290 pF Output Capacitance Coss VGS = 0 V 60 pF Reverse Transfer Capacitance Crss f = 1 MHz 5 pF Turn-on Delay Time td(on) VDD = 150 V, ID = 1.0 A 7 ns VGS = 10 V 2 ns RG = 10 Ω, RL = 10 Ω 22 ns 9 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 450 V 9 nC Gate to Source Charge QGS VGS = 10 V 2.4 nC Gate to Drain Charge QGD ID = 2.0 A 2 nC Body Diode Forward Voltage VF(S-D) IF = 2.0 A, VGS = 0 V 0.9 V Reverse Recovery Time trr IF = 2.0 A, VGS = 0 V 0.9 µs Reverse Recovery Charge Qrr di/dt = 50 A/µs 2.0 µC TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D13336EJ3V0DS td(on) tr ton td(off) tf toff 2SK3113 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 40 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 20 40 60 80 100 120 140 30 25 20 15 10 5 0 160 Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm 35 0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C Tch - Channel Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA TC = 25˚C, Single pulse Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm ) 0V 10 ID(pulse) =2 S G tV a d( ite 1 R n) (o DS Lim 0.1 1 10 0 ID(DC) Po we r 1 10 PW = 10 µs µs m s m s 10 Di 0 ss m ipa s tio DC n Lim ite d 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A 100 Rth(ch-A) = 125˚C/W 100 10 Rth(ch-C) = 6.25˚C/W 1 0.1 0.01 10 µ 100 µ 1m 10 m 100 m 1 Single pulse Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm 10 100 1000 PW - Pulse Width - s Data Sheet D13336EJ3V0DS 3 2SK3113 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS Pulsed VGS = 10 V 100 8V ID - Drain Current - A ID - Drain Current - A 5 6V 4 3 2 Tch = 125˚C 75˚C 10 1.0 Tch = 25˚C −25˚C 0.1 1 0 0 0 10 20 30 40 0 5 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V 5.0 4.0 3.0 2.0 1.0 VDS = 10 V ID = 1 mA 0 −50 0 50 100 150 100 VDS = 10 V Pulsed 10 Tch = −25˚C 25˚C 75˚C 125˚C 1 0.1 0.01 0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 6 ID = 2.0 A 5 1.0 A 4 3 2 1 0 0 5 10 10 15 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 7 6 5 VGS = 10 V 20 V 4 3 2 1 0 VGS - Gate to Source Voltage - V 4 1.0 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω Tch - Channel Temperature - ˚C 7 10 VDS = 10 V Pulsed 15 Data Sheet D13336EJ3V0DS 0.1 1 ID - Drain Current - A 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 9 ID = 2 A 8 IF - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - Ω 2SK3113 7 6 1A 5 4 3 2 1 100 10 1.0 VGS = 10 V 0.1 0V VGS = 10 V 0 −50 0 100 50 0 150 0.5 Pulsed 1.5 1.0 VF(S-D) - Source to Drain Voltage - V Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 10000 1000 Ciss 100 Coss 10 Crss VGS = 0 V f = 1 MHz 1 0.1 1 10 td(off) tf 10 td(on) tr 1 VDD = 150 V VGS = 10 V RG = 10 Ω 0.1 0.1 100 1 ID - Drain Current - A VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 50 A/µs VGS = 0 V 1000 100 10 0.1 1.0 10 100 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 10000 10 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 800 ID = 2.0 A 14 600 VDD = 450 V 300 V 150 V 12 VGS 10 400 8 6 200 4 2 VDS 0 0 ID - Drain Current - A 4 8 12 VGS - Gate to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF 100 0 16 QG - Gate Charge - nC Data Sheet D13336EJ3V0DS 5 2SK3113 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 120 10 IAS = 2.0 A EAS 1.0 =2 .7 m J RG = 25 Ω VDD = 150 V VGS = 20 → 0 V Starting Tch = 25˚C 0.1 10 µ 100 µ 1m 10 m Energy Derating Factor - % IAS - Single Avalanche Current - A 100 100 80 60 40 20 0 25 L - Inductive Load - H 6 VDD = 150 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 2.0 A 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C Data Sheet D13336EJ3V0DS 2SK3113 PACKAGE DRAWINGS (Unit: mm) 2) TO-252 (MP-3Z) 1.1 ±0.2 +0.2 0.5 −0.1 +0.2 0.5 −0.1 0.75 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1 2 3 1.5 −0.1 2.3 ±0.2 1.0 MIN. 1.8TYP. 0.5 ±0.1 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.7 0.8 4.3 MAX. 1.1 ±0.2 13.7 MIN. 3 7.0 MIN. 2 5.5 ±0.2 1.6 ±0.2 1 4 5.5 ±0.2 10.0 MAX. 6.5 ±0.2 5.0 ±0.2 0.5 ±0.1 4 +0.2 2.3 ±0.2 2.0 MIN. 5.0 ±0.2 1.5 −0.1 6.5 ±0.2 +0.2 1) TO-251 (MP-3) EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D13336EJ3V0DS 7 2SK3113 • The information in this document is current as of August, 2004. The information is subject to change without notice. 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