NEC 2SK3355-S

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3355
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
★
DESCRIPTION
The 2SK3355 is N-channel MOS Field Effect Transistor
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3355
TO-220AB
2SK3355-S
TO-262
2SK3355-ZJ
TO-263
2SK3355-Z
TO-220SMDNote
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 42 A)
Note TO-220SMD package is produced only
RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 42 A)
in Japan.
• Low Ciss: Ciss = 9800 pF TYP.
(TO-220AB)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS(AC)
±20
V
ID(DC)
±83
A
ID(pulse)
±332
A
PT
100
W
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
75
A
Single Avalanche Energy
Note2
EAS
562
mJ
Storage Temperature
(TO-262)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
(TO-263, TO-220SMD)
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
1.25
°C/W
Channel to Ambient
Rth(ch-A)
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14132EJ2V0DS00 (2nd edition)
Date Published May 2000 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
©
1999, 2000
2SK3355
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
Drain to Source On-state Resistance
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
RDS(on)1
VGS = 10 V, ID = 42 A
4.6
5.8
mΩ
RDS(on)2
VGS = 4.0 V, ID = 42 A
6.1
8.8
mΩ
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 42 A
39
77
Drain Leakage Current
IDSS
VDS = 60 V, VGS = 0 V
10
µA
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
µA
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Output Capacitance
Gate to Source Cut-off Voltage
S
9800
pF
Coss
1500
pF
Reverse Transfer Capacitance
Crss
630
pF
Turn-on Delay Time
td(on)
ID = 42 A, VGS(on) = 10 V, VDD = 30 V,
130
ns
RG = 10 Ω
1450
ns
td(off)
510
ns
tf
510
ns
170
nC
Rise Time
tr
Turn-off Delay Time
Fall Time
Total Gate Charge
QG
Gate to Source Charge
QGS
28
nC
Gate to Drain Charge
QGD
46
nC
Body Diode Forward Voltage
ID = 83 A , VDD = 48 V, VGS = 10 V
VF(S-D)
IF = 83 A, VGS = 0 V
0.99
V
Reverse Recovery Time
trr
IF = 83 A, VGS = 0 V,
64
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
130
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
D.U.T.
L
RL
PG.
50 Ω
VDD
VGS = 20 → 0 V
RG
PG.
VGS
VGS
Wave Form
0
90 %
ID
VGS
0
ID
Starting Tch
τ = 1 µs
Duty Cycle ≤ 1 %
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
2
IG = 2 mA
RL
50 Ω
VDD
10 %
0 10 %
Wave Form
τ
VDD
PG.
90 %
BVDSS
VDS
ID
90 %
VDD
ID
IAS
VGS(on)
10 %
Data Sheet D14132EJ2V0DS00
tr td(off)
td(on)
ton
tf
toff
2SK3355
TYPICAL CHARACTERISTICS (TA = 25 °C )
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
140
100
80
60
40
20
0
0
20
40
60
80
100
120 140
120
100
80
60
40
20
0
0
160
20
Tch - Channel Temperature - ˚C
40
60
80
100
120 140
160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
1000
ID - Drain Current - A
ID(pulse)
d
ite )
im 0 V
1
)L
ID(DC)
=
on
(
S
S
RD t V G
(a
100
PW
=1
0µ
s
10
0µ
s
DC
10
1m
s
10
m
s
Di
ss
ipa
tio
n
Lim
ite
d
TC = 25˚C
Single Pulse
1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - ˚C/W
★
100
Rth(ch-A) = 83.3 ˚C/W
10
Rth(ch-C) = 1.25 ˚C/W
1
0.1
Single Pulse
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D14132EJ2V0DS00
3
2SK3355
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
1000 Pulsed
ID - Drain Current - A
ID - Drain Current - A
500
100
TA = −50˚C
25˚C
75˚C
150˚C
10
1
400
VGS =10 V
300
4.0 V
200
100
1
2
3
VDS = 10 V
5
6
4
RDS(on) - Drain to Source On-state Resistance - mΩ
4.0
3.0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
TA = 150˚C
75˚C
25˚C
−50˚C
1
0.1
0.01
0.01
0.1
1
10
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
15
10
VGS = 4.0 V
5
10 V
1
10
100
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
VDS - Drain to Source Voltage - V
ID - Drain Current - A
4
2.0
1.0
VGS - Gate to Source Voltage - V
100 VDS = 10 V
Pulsed
0
Pulsed
0
VGS(th) - Gate to Source Threshold Voltage - V
| yfs | - Forward Transfer Admittance - S
0.1
10
Pulsed
ID = 42 A
5
0
5
0
10
15
20
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = 10 V
ID = 1 mA
2.5
2.0
1.5
1.0
0.5
0
−50
0
50
100
150
Tch - Channel Temperature - ˚C
ID - Drain Current - A
Data Sheet D14132EJ2V0DS00
2SK3355
1000
Pulsed
10
VGS = 4.0 V
10 V
8
6
4
2
ID = 42 A
0
−50
50
0
100
Pulsed
VGS = 10 V
100
VGS = 0 V
10
1
0.1
0
150
Tch - Channel Temperature - ˚C
Ciss
1 000
Coss
Crss
100
0.1
1
10
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS
10000
VGS = 0 V
f = 1 MHz
10000
100
tr
1000
td(off)
tf
100
td(on)
10
0.1
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
10
10
100
100
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
di/dt = 100 A/µs
VGS = 0 V
1.0
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
1
0.1
10
1
ID - Drain Current - A
VDS - Drain to Source Voltage - V
1000
1.5
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100000
1.0
0.5
10
VGS
8
80
VDD = 48 V
30 V
12 V
60
6
4
40
VDS
20
0
0
20
40
60
2
80
ID = 83 A
100 120 140 160
VGS - Gate to Source Voltage - V
12
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
ISD - Diode Forward Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
QG - Gate Charge - nC
IF - Drain Current - A
Data Sheet D14132EJ2V0DS00
5
2SK3355
SINGLE AVALANCHE ENERGY
DERATING FACTOR
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
160
IAS = 75 A
100
EAS
=5
62 m
J
10
VDD = 30 V
RG = 25 Ω
VGS = 20 V → 0 V
1
10 µ
100 µ
120
100
80
60
40
20
1m
L - Inductive Load - H
6
VDD = 30 V
RG = 25 Ω
VGS = 20 V → 0 V
IAS ≤ 75 A
140
Energy Derating Factor - %
IAS - Single Avalanche Energy - mJ
1000
10 m
0
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - ˚C
Data Sheet D14132EJ2V0DS00
2SK3355
PACKAGE DRAWINGS (Unit: mm)
2) TO-262(MP-25 Fin Cut)
1.0±0.5
TO-220AB(MP-25)
4.8 MAX.
10.6 MAX.
(10)
φ 3.6±0.2
1.3±0.2
4.8 MAX.
1.3±0.2
15.5 MAX.
5.9 MIN.
4
1
1 2 3
3
12.7 MIN.
6.0 MAX.
1.3±0.2
1.3±0.2
2.54 TYP.
2.8±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
3)
Note
TO-263 (MP-25ZJ)
4) TO-220SMD(MP-25Z)
4.8 MAX.
(10)
4.8 MAX.
(10)
1.3±0.2
1.3±0.2
4
0.7±0.2
(0
.8
R)
1.0±0.3
0.5±0.2
2.54 TYP. 1
1.Gate
2.Drain
3.Source
4.Fin (Drain)
3.0±0.5
8.5±0.2
1.0±0.5
3 2.54 TYP.
2.8±0.2
2
1.4±0.2
)
R
0.5
(
11±0.4
1.4±0.2
2
)
.5R R)
8
.
(0
(0
0.5±0.2
3 2.54 TYP.
2.8±0.2
5.7±0.4
8.5±0.2
1.0±0.5
4
2.54 TYP. 1
2.8±0.2
0.5±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
0.75±0.1
2.54 TYP.
2
8.5±0.2
4
10.0
12.7 MIN.
3.0±0.3
1)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note This Package is produced only in Japan.
EQUIVALENT CIRCUIT
Drain
Remark
Body
Diode
Gate
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Gate
Protection
Diode
Source
Data Sheet D14132EJ2V0DS00
7
2SK3355
• The information in this document is current as of May, 2000. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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M8E 00. 4