NEC AC03DGM

DATA SHEET
THYRISTORS
AC03DGM, AC03FGM
3 A MOLD TRIAC
PACKAGE DRAWING (UNIT: mm)
The AC03EGM and AC03FGM are fully diffused mold TRIACs
with an effective on-current of 3 A. The repeat peak off-voltages
are 400 V and 600 V.
FEATURES
• Gate trigger current (mode I, III, and IV) at 12 mA or less is
guaranteed.
• This transistor features a small and lightweight package and is
easy to handle even on the mounting surface due to its TO202AA dimensions. Processing of lead wires and heatsink
(tablet) using jigs is also possible.
• High degrees-of-freedom applications design is available due to
high gate trigger sensitivity and small hold current distribution.
• Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Noncontact
switches
of
motor
speed
control,
heater
temperature control, lamp light control
*TC test bench-mark
Standard weight: 1.4 g
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
AC03DGM
AC03FGM
Unit
Remarks
Non-repetitive peak off-state voltage
VDSM
500
700
V
−
Repetitive peak off-voltage
VDRM
400
600
V
−
Effective on-state current
IT(RMS)
3 (TC = 92°C)
A
Refer to Figures
11 and 12.
ITSM
30 (50 Hz 1 cycle)
A
Refer to Figure 2.
Surge on-state current
33 (60 Hz 1 cycle)
Fusing current
ƒiT2dt
4.0 (1 ms ≤ t ≤ 10 ms)
A2S
−
Critical rate of rise of on-state
current
dIT/dt
40
A/µs
−
Peak gate power dissipation
PGM
3 (f ≥ 50 Hz, Duty ≤ 10 %)
W
−
PG(AV)
0.3
W
−
IGM
±0.5 (f ≥ 50 Hz, Duty ≤ 10 %)
A
−
Junction temperature
Tj
−40 to +125
°C
−
Storage temperature
Tstg
−55 to +150
°C
−
Average gate power dissipation
Peak gate current
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13536EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
AC03DGM, AC03FGM
ELECTRICAL CHARACTERISTICS (Tj = 25°°C, RGK = 1 kΩ
Ω)
Parameter
Symbol
Conditions
Repeat peak off-current
IDRM
VDM = VDRM
On-state voltage
VTM
ITM = 5 A
Gate trigger
current
Gate trigger
voltage
MIN.
TYP.
MAX.
Unit
Tj = 25°C
−
−
100
µA
Tj = 125°C
−
−
1
mA
−
−
1.8
V
Refer to
Figure 1.
mA
Refer to
Figure 4.
V
Refer to
Figure 4.
Mode I
T2 +, G+
−
−
12
II
VDM = 12 V
T2 −, G+
−
−
−
RL = 30 Ω
T2 −, G−
−
−
12
III
IGT
Remarks
−
IV
T2 +, G−
−
−
12
Mode I
T2 +, G+
−
−
1.5
VDM = 12 V
T2 −, G+
−
−
−
RL = 30 Ω
T2 −, G−
−
−
1.5
T2 +, G−
−
−
1.5
0.2
−
−
V
−
−
10
−
mA
−
−
100
−
V/µs
−
5
−
−
V/µs
−
II
III
VGT
IV
Gate non-trigger voltage
Hold current
Critical rate of rise of offstate voltage
1
Tj = 125°C, VDM = VDRM
2
VGD
IH
dv/dt
VDM = 24 V, ITM = 5 A
2
Tj = 125°C, VDM = VDRM
3
Tj = 125°C
Commutating critical rate of
rise of off-state voltage
(dv/dt)c
(diT/dt)c = −1.6 A/ms
VD = 400 V
Thermal resistance*
Rth(j−c)
Junction-to-case AC
−
−
10
°C/W
Rth(j−a)
Junction-to-ambient AC
−
−
75
°C/W
Refer to
Figure 13.
* The thermal resistance at 50 Hz and 60 Hz sine wave current, which is shown on the following expression:
Tj(max)–TC
Tj(max) :Maximum junction temperature
Rth(j−c) =
PT(AV)
:Case temperature
TC
PT(AV) :Average on-dissipation
2
Data Sheet D13536EJ3V0DS
AC03DGM, AC03FGM
Data Sheet D13536EJ3V0DS
3
AC03DGM, AC03FGM
4
Data Sheet D13536EJ3V0DS
AC03DGM, AC03FGM
[MEMO]
Data Sheet D13536EJ3V0DS
5
AC03DGM, AC03FGM
• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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M8E 00. 4