DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1841 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING ★ DESCRIPTION ORDERING INFORMATION The 2SA1841 is a high-speed Darlington power transistor. PART NUMBER PACKAGE 2SA1841 MP-10 This transistor is ideal for high-precision control such as PWM control for pulse motors brushless motors in OA and FA equipment. In addition, this transistor features a package that can be automounted in radial taping specifications, thus contributing to mounting cost reduction. FEATURES • Auto-mounting possible in radial taping specifications • Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions • High DC current amplifiers due to Darlington connection hFE = 4000 to 20000 (VCE = −2.0 V, IC = −4.0 A) • On-chip C-to-E reverse diode • Fast switching speed ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −100 V Collector to Emitter Voltage VCEO −100 V Emitter to Base Voltage VEBO −8.0 V Collector Current (DC) IC(DC) −8.0 A −16 A IB(DC) −0.8 A Total Power Dissipation (TA = 25°C) PT 1.8 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Collector Current (pulse) Base Current (DC) IC(pulse) Note Note PW ≤ 10 ms, Duty Cycle ≤ 2% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15590EJ3V0DS00 (3rd edition) Date Published July 2004 NS CP(K) Printed in Japan The mark ★ shows major revised points. 2002 2SA1841 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB = −100 V, IE = 0 A −1.0 µA Emitter Cut-off Current IEBO VEB = −5.0 V, IC = 0 A −5.0 mA hFE1 VCE = −2.0 V, IC = −4.0 A 4000 hFE2 VCE = −2.0 V, IC = −8.0 A 500 VCE(sat) IC = −4.0 A, IB = −4.0 mA −1.5 V VBE(sat) IC = −4.0 A, IB = −4.0 mA −2.0 V DC Current Gain Note Collector Saturation Voltage Base Saturation Voltage Note Note 20000 Turn-on Time ton IC = −4.0 A 0.2 µs Storage Time tstg IB1 = −IB2 = −4.0 mA 1.5 µs RL = 12.5 Ω, VCC = −50 V 0.7 µs Fall Time tf Note Pulsed test PW ≤ 350 ms, Duty Cycle ≤ 2% ★ hFE CLASSIFICATION Marking L K hFE1 4000 to 10000 8000 to 20000 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT RL IC VIN Base current waveform IB1 T.U.T. IB2 PW . PW =. 50 µs Duty Cycle ≤ 2% IB2 IB1 VCC Collector current waveform 10% IC 90% . VBB =. −5 V ton 2 Data Sheet D15590EJ3V0DS tstg tf 2SA1841 IC Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (TA = 25°C) Ambient Temperature Ta (°C) Collector Current IC (A) Transient Thermal Resistance rth(j-a)(t) (°C/W) Ambient Temperature Ta (°C) Single pulse Pulse Width PW (s) Collector to Emitter Voltage VCE (V) DC Current Gain hFE Collector Current IC (A) Pulse test Collector to Emitter Voltage VCE (V) Data Sheet D15590EJ3V0DS Collector Current IC (A) 3 Pulse test Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) 2SA1841 Collector Current IC (A) Collector Capacitance Cob (pF) Gain Bandwidth Product fT (MHz) Collector Current IC (A) Collector to Base Voltage VCB (V) Collector Current IC (A) 4 Pulse test Data Sheet D15590EJ3V0DS 2SA1841 ★ PACKAGE DRAWING (Unit: mm) TAPING SPECIFICATION MP-10 4.5 ±0.2 8.0 ±0.2 P2 P T ∆P ∆h ∆h W2 W0 1.4 ±0.2 1.4 ±0.2 F2 d W F1 W1 H1 2 3 l1 2.5 ±0.2 1 H1 H1 A 13.0 ±0.2 A1 0.5 ±0.1 0.5 ±0.1 0.5 ±0.1 P0 A1 A D0 d F1 F2 H H0 H1 ∆h l1 P P0 P2 ∆P T W W0 W1 W2 8.0 ± 0.2 13.0 ± 0.2 φ 4.0 ± 0.2 0.5 ± 0.1 2.5 +0.4 −0.1 2.5 +0.4 −0.1 20.0 MAX. 16.0 ± 0.5 32.2 MAX. 0 ± 1.0 2.5 MIN. 12.7 ± 1.0 12.7 ± 0.3 6.35 ± 0.5 0 ± 1.3 4.5 ± 0.2 +1.0 18.0 −0.5 5.0 MIN. 9.0 ± 0.5 0.7 MIN. D0 2.5 TYP. 2.5 TYP. 1: Base 2: Collector 3: Emitter EQUIVALENT CIRCUIT 2 1 R1 R2 . R1 =. 3.0 kΩ R2 =. . 300 Ω 3 1. Base 2. Collector 3. Emitter Data Sheet D15590EJ3V0DS 5 2SA1841 • The information in this document is current as of July, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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