DATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. ORDERING INFORMATION Part No. Package 2SC2334 TO-220AB FEATURES • Low collector saturation voltage (TO-220AB) • Fast switching speed • Complementary transistor: 2SA1010 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Ratings Unit Collector to base voltage Parameter VCBO 150 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) 7.0 A Collector current (pulse) IC(pulse) 15 A Base current (DC) Total power dissipation Symbol Conditions PW ≤ 300 µs, duty cycle ≤ 10% IB(DC) PT 3.5 A TC = 25°C 40 W TA = 25°C 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14902EJ2V1DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan 2002 2SC2334 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Symbol Collector to emitter voltage VCEO(SUS) IC = 5.0 A, IB1 = 0.5 A, L = 1 mH Conditions MIN. 100 V VCEX(SUS)1 IC = 5.0 A, IB1 = −IB2 = 0.5 A, VBE(OFF) = −5.0 V, L = 180 µH, clamped 100 V VCEX(SUS)2 IC = 10 A, IB1 = 1.0 A, IB2 = −0.5 A, VBE(OFF) = −5.0 V, L = 180 µH, clamped 100 V MAX. Unit ICBO VCB = 100 V, IE = 0 A 10 µA ICER VCE = 100 V, RBE = 51 Ω, TA = 125°C 1.0 mA ICEX1 VCE = 100 V, VBE(OFF) = −1.5 V 10 µA ICEX2 VCE = 100 V, VBE(OFF) = −1.5 V, TA = 125°C 1.0 mA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 A 10 µA DC current gain hFE1 VCE = 5.0 V, IC = 0.5 A Note 40 hFE2 VCE = 5.0 V, IC = 3.0 A Note 40 VCE = 5.0 V, IC = 5.0 A Note 20 Collector cutoff current hFE3 200 Collector saturation voltage VCE(sat) IC = 5.0 A, IB = 0.5 A Note 0.6 Base saturation voltage VBE(sat) IC = 5.0 A, IB = 0.5 A Note 1.5 V 0.5 µs µs µs Turn-on time ton Storage time tstg Fall time tf IC = 5.0 A, RL = 10 Ω, IB1 = −IB2 = −0.5 A, VCC ≅ 50 V Refer to the test circuit. 1.5 0.5 Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE2 40 to 80 60 to 120 100 to 200 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 TYP. Data Sheet D14902EJ2V1DS V 2SC2334 TYPICAL CHARACTERISTICS (TA = 25°C) Derating dT (%) Total Power Dissipation PT (W) 2 mm aluminum board, no insulating board, grease coating, natural air cooling With infinite heatsink Ambient Temperature TA (°C) Collector Current IC (A) Case Temperature TC (°C) Single pulse Transient Thermal Resistance rth(j-c) (°C/W) Collector to Emitter Voltage VCE (V) Pulse Width PW (ms) Data Sheet D14902EJ2V1DS 3 Turn-On Time ton (µs) StorageTime tstg (µs) Fall Time tf (µs) Pulse test 4 Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) DC Current Gain hFE Collector Current IC (A) Collector Current IC (A) 2SC2334 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Collector Current IC (A) Collector Current IC (A) Data Sheet D14902EJ2V1DS Pulse test Collector Current IC (A) 2SC2334 PACKAGE DRAWING (UNIT: mm) 1. Base 2. Collector 3. Emitter 4. Fin (collector) Data Sheet D14902EJ2V1DS 5 2SC2334 • The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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