ETC UPC2771T-E3

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC2771T
MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER FOR
3 V DIGITAL CELLULAR TELEPHONE
The µPC2771T is a silicon monolithic integrated circuit designed as the transmission PA’s driver for digital cellular
telephones. This +11.5 dBm P1db driver can get back-off to PA input level.
3 V supply operation is suitable for low voltage systems.
Due to the 50 Ω cascadable and mini-mold package, this IC is suitable for high-density surface mounting.
The µPC2771T is manufactured using NEC’s NESATTMIII silicon bipolar process (fT = 20 GHz). This process uses
a silicon nitride passivation film and gold electrodes. These materials protect the chip’s surface, prevent corrosion
and feature the low current and high-frequency characteristics transistors. Thus, this IC has excellent reliability and
electrical performance.
FEATURES
• Supply voltage
: VCC = 3.0 V 50.3 V
• Medium output power
: P1dB = +11.5 dBm TYP. @ 0.9 GHz (with inductance to gain wide-band)
P1dB = +9.5 dBm TYP. @ 1.5 GHz (with inductance to gain wide-band)
• Recommended operating frequency
: 800 MHz to 1.9 GHz
• Insertion power gain
: GP = 21 dB TYP. @ 0.9 GHz
• 50 Ω cascadable
: 50 Ω input/output impedance
GP = 20 dB TYP. @ 1.5 GHz
• High-density surface mounting possible
: 6-pin mini-mold package
• Adjacent channel interference
: –60 dBc (typ.) @ f = 900 MHz,
f = ±50 kHz, PO = +7 dBm
(for reference purposes only)
ORDERING INFORMATION
PART NUMBER
µPC2771T-E3
Remark
PACKAGE
6-pin mini-mold
MARKING
ARRANGEMENT
C2H
Embossed tape 8 mm wide. Pins 1, 2, and 3
facing the perforations. 3 000 units/reel.
To order evaluation samples, please contact your local NEC sales office (specify µPC2771T).
Caution: Electro-static sensitive devices
Document No. P10894EJ2V0DS00 (2nd edition)
(Previous No. ID-3489)
Date Published February 1996 P
Printed in Japan
©
1996
µPC2771T
PIN CONNECTIONS
(Bottom view)
C2H
(Top view)
3
2
1
4
5
6
1.
2.
3.
4.
5.
6.
Input
GND
GND
Output
GND
VCC
4
3
5
2
6
1
Marking µPC2771T: C2H
SERIES PRODUCTS (TA = +25 °C, VCC = 3.0 V, ZL = ZS = 50 Ω)
fu
PO(sat) P1dB
(GHz) (dBm) (dBm)
PRODUCT
NAME
VCC
(V)
ICC
(mA)
GP
(dB)
5 V, 15 dB gain
µPC2708T
5
26
15
2.9
+10
+8.5
5 V, 23 dB gain
µPC2709T
5
26
23
2.3
+11.5
+9
3 V, 13 dB gain
µPC2762T
3
26.5
13
2.9
+9
+8
3 V, 20 dB gain Conventional
µPC2763T
3
27
20
2.4
+11
+9.5
µPC2771T
3
36
21
2.1
TYPE
+11.5 dBm output
REMARKS
+12.5 +11.5 Device described in this
data sheet
Caution The above table lists the typical performance of each model. See ELECTRICAL CHARACTERISTICS for the test conditions.
SYSTEM APPLICATION EXAMPLE
Digital cellular telephone
Low-noise transistor
RX
DEMO
÷N
I
Q
PLL
SW
PLL
I
0˚
TX
PA
Driver
µ PC2771T
Phase
shifter
90˚
For details of individual products, refer to the latest data sheet for the product.
2
Q
µPC2771T
PIN FUNCTIONS
PIN
1
APPLIED
SYMBOL VOLTAGE
(V)
–
INPUT
2
3
5
GND
4
OUTPUT
6
VCC
0
2.7-3.3
EQUIVALENT CIRCUIT
DESCRIPTION
High-frequency signal input pin. A internal
matching circuit, configured with resistors,
enables 50 Ω connection over a wide band. A
multi-feedback circuit is designed to cancel the
deviations of hFE and resistance.
6
4
Ground pin. Form a ground pattern as wide as
possible to maintain the minimum ground
impedance.
1
High-frequency signal output pin. Connect an
inductor between this pin and VCC to supply
current to the internal output transistors.
Power supply pin, which biases the internal input
transistor.
Excellent RF characteristics are obtained by a
two-stage amplifier circuit.
2
3
5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
CONDITIONS
TA = +25 °C, pins 4 and 6
Supply Voltage
VCC
3.6
V
Input Power
Pin
+13
dBm
TA = +25 °C
Total Circuit Current
ICC
77.7
mA
TA = +25 °C
Power Dissipation of Package
PD
280
mW
Mounted on 50 × 50 × 1.6 mm double-sided
copper-clad epoxy glass PWB
TA = +85 °C
Operating Temperature
Topt
–40 to +85
°C
Storage Temperature
Tstg
–55 to +150
°C
RECOMMENDED OPERATING CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply Voltage
VCC
2.7
3.0
3.3
V
Operating Temperature
Topt
–40
+25
+85
°C
Operating Frequency
fopt
0.8
–
1.9
GHz
PARAMETER
3
µPC2771T
ELECTRICAL CHARACTERISTICS
(TA = +25 °C, VCC = 3.0 V, ZL = ZS = 50 Ω, with a sin wave applied unless otherwise specified)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Circuit Current
ICC
–
36
45
mA
No signal
Insertion Power Gain
GP
19
17
21
20
24
23
dB
f = 0.9 GHz
f = 1.5 GHz
Noise Figure
NF
–
–
6.0
6.0
7.5
7.5
dB
f = 0.9 GHz
f = 1.5 GHz
Isolation
ISL
25
25
30
30
–
–
dB
f = 0.9 GHz
f = 1.5 GHz
Input Return Loss
RLin
10
10
14
14
–
–
dB
f = 0.9 GHz
f = 1.5 GHz
Output Return Loss
RLout
6.5
5.5
9.5
8.5
–
–
dB
f = 0.9 GHz
f = 1.5 GHz
1 dB Compression Output Level
PO(1dB)
+9
+7
+11.5
+9.5
–
–
dBm
f = 0.9 GHz
PO(SAT)
–
–
+12.5
+11
–
–
dBm
f = 0.9 GHz
f = 1.5 GHz
fu
1.7
2.1
–
GHz
3 dB less than the gain at 0.1 GHz
Saturated Output Power
Maximum Operating Frequency
f = 1.5 GHz
OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY
(TA = +25 °C, VCC = 3.0 V, ZL = ZS = 50 Ω)
PARAMETER
Adjacent Channel Interference 1
Adjacent Channel Interference 2
Third-order Intermodulation
Distortion
1 dB Compression Output Level
SYMBOL
Padj1
Padj2
IM3
PO(1dB)
DATA
MIN.
TYP.
MAX.
–
–61
–
–
–72
–
–
–59
–
–
–71
–
–
–18
–
–
–12
–
–
+10.2
–
UNIT
dBC
dBC
CONDITIONS
f = 900 MHz
π/4 QPSKNote
PO = +7 dBm
f = ±50 MHz
f = 1.5 GHz
π/4 QPSKNote
f = ±50 MHz
f = ±100 MHz
f = ±100 MHz
PO = +7 dBm
dBC
dBm
Sin wave input
Output of each tone
PO = +7 dBm
f1 = 900 MHz
f2 = 902 MHz
f1 = 1.5 GHz
f2 = 1.502 GHz
f = 1.5 GHz, L = 10 nH
(refer to page 5 and 10)
Note π/4 QPSK modulation signal input, data rate = 42 kbps, rolloff ratio = 0.5, PN 9 bits (pseudorandom pattern)
4
µPC2771T
TEST CIRCUIT
VCC
1 000 pF
C3
L
6
50 Ω
C1
IN
C2
4
1
50 Ω
OUT
1 000 pF
1 000 pF
2, 3, 5
Components of test circuit for
measuring electrical characteristics
C1 to C3
L
TYPE
VALUE
Chip capacitor
1 000 pF
Coil
Note
Example of actual application components
(refer to page 10)
TYPE
C1 to C3 Chip capacitor
300 nH
L
Chip inductor
Note 20.5T, 2 mm I.D., φ 0.25UEW
VALUE
1 000 pF
OPERATING FREQUENCY
100 MHz or higher
50 nH
900 MHz band
10 nH
1.5 GHz band
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC consumes 28 mA, to output medium power. To supply current for output
transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select large value inductance,
as listed above.
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor make output-port-impedance higher to get enough
gain. In this case, large inductance and Q is suitable.
For above reason, select an inductance of 100 Ω or over impedance in the operating frequency. The gain is a
peak in the operating frequency band, and suppressed at lower frequencies.
The recommendable inductance can be chosen from example of actual application components list as shown
above.
CAPACITORS FOR THE VCC, INPUT, AND OUTPUT PINS
Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors
for the input and output pins.
The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias
can be supplied against VCC fluctuation.
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus
perform as high pass filters, suppressing low frequencies to DC.
To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under
10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are
determined by equation, C = 1/(2πRfC).
5
µPC2771T
CHARACTERISTIC CURVES
(TA = +25 °C, with components for measuring electrical characteristics unless otherwise specified)
CIRCUIT CURRENT vs.
OPERATING TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
50
50
40
Circuit current ICC (mA)
Circuit current ICC (mA)
No signal
30
20
10
0
1
2
3
40
30
20
10
0
-60
4
Supply voltage VCC (V)
18
GP
VCC = 3.3 V
VCC = 3.0 V
16
VCC = 2.7 V
14
12
10
VCC = 3.3 V
0
VCC = 3.0 V
NF
VCC = 2.7 V
8
6
0.1
3
Insertion power gain GP (dB)
20
0.3
1.0
60
80
20
TA = +25˚C
TA = +85˚C
+85˚C
18
+25˚C
-40˚C
16
VCC = 3.0 V
0.3
1.0
Frequency f (GHz)
ISOLASION vs. FREQUENCY
INPUT RETURN LOSS, OUTPUT RETURN
LOSS vs. FREQUENCY
3.0
0
VCC = 3.0 V
VCC = 3.0 V
-20
-30
0.3
1.0
Frequency f (GHz)
100
TA = -40˚C
Frequency f (GHz)
-40
6
40
22
14
0.1
3.0
-10
-50
0.1
20
INSERTION POWER GAIN vs. FREQUENCY
VCC = 3.3 V
VCC = 2.7 V VCC = 3.0 V
0
24
Input return loss RLin (dB)
Output return loss RLout (dB)
5
Insertion power gain GP (dB)
7
Isolation ISL (dB)
Noise figure NF (dB)
22
-20
Operating temperature Topt (˚C)
INSERSION POWER GAIN, NOISE FIGURE
vs. FREQUENCY
24
-40
3.0
RLout
-10
-20
RLin
-30
-40
0.1
0.3
1.0
Frequency f (GHz)
3.0
µPC2771T
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
15
15
VCC = 3.3 V
Output power PO (dBm)
Output power PO (dBm)
10
VCC = 2.7 V
5
TA = +85˚C
f = 900 MHz
VCC = 3.0 V
f = 900 MHz
VCC = 3.0 V
0
10
TA = -40˚C
TA = +25˚C
5
TA = +25˚C
TA = -40˚C
0
TA = +85˚C
-5
-5
-25
-15
-20
-10
-5
-25
0
Input power Pin (dBm)
-5
0
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
15
Output power PO (dBm)
10
VCC = 2.7 V
5
VCC = 3.0 V
0
-5
-15
-20
-10
-5
TA = +25˚C
10
TA = -40˚C
5
TA = +25˚C
0
TA = -40˚C
-5
-10
-25
TA = +85˚C
f = 1.5 GHz
VCC = 3.0 V
VCC = 3.3 V
f = 1.5 GHz
Output power PO (dBm)
-10
Input power Pin (dBm)
15
-25
0
TA = +85˚C
-15
-20
-10
-5
0
Input power Pin (dBm)
Input power Pin (dBm)
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
15
15
f = 1.9 GHz
10
VCC = 3.0 V
5
VCC = 2.7 V
0
f = 1.9 GHz
VCC = 3.0 V
VCC = 3.3 V
Output power PO (dBm)
Output power PO (dBm)
-15
-20
-5
-10
10
TA = +85˚C
TA = +25˚C
5
TA = -40˚C
0
-5
-10
-25
-20
-15
-10
Input power Pin (dBm)
-5
0
-25
-20
-15
-10
-5
0
Input power Pin (dBm)
7
µPC2771T
SATURATED OUTPUT POWER
vs. FREQUENCY
SATURATED OUTPUT POWER
vs. FREQUENCY
17
Saturated output power PO(sat) (dBm)
Pin = -3 dBm
15
VCC = 3.3 V
13
VCC = 3.0 V
11
VCC = 2.7 V
9
7
5
0.1
0.3
1.0
3.0
Pin = -3 dBm
15
13
TA = +25˚C
11
TA = -40˚C
9
7
5
0.1
0.3
1.0
Frequency f (GHz)
ADJACENT CHANNEL INTERFERENCE,
OUTPUT POWER vs. INPUT POWER
ADJACENT CHANNEL INTERFERENCE,
OUTPUT POWER vs. INPUT POWER
-20
15
15
f = 1.5 GHz
Pout
-40
5
Padj
( f = ±50 kHz)
0
-60
-5
-10
Output power PO (dBm)
10
Adjacent channel interference Padj (dBc)
f = 900 MHz
10
Pout
-40
5
0
Padj
( f = ±50 kHz)
-60
-5
-10
Padj
( f = ±100 kHz)
-80
-30
Padj
( f = ±100 kHz)
-15
-25
-20
-15
-10
-5
-80
-30
0
-15
-25
THIRD-ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
-60
f1 = 900 MHz
f2 = 902 MHz
-50
VCC = 3.3 V
-40
VCC = 3.0 V
VCC = 2.7 V
-30
-20
-10
-10
-5
0
+5
Output power of each tone PO(each) (dBm)
8
-20
-15
-10
-5
0
Input power Pin (dBm)
+10
Third-order intermodulation distortion IM3 (dBc)
Third-order intermodulation distortion IM3 (dBc)
Input power Pin (dBm)
0
-15
3.0
Frequency f (GHz)
-20
Adjacent channel interference Padj (dBc)
TA = +85˚C
THIRD-ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
-60
f1 = 1 500 MHz
f2 = 1 502 MHz
-50
VCC = 3.3 V
-40
VCC = 3.0 V
VCC = 2.7 V
-30
-20
-10
0
-15
-10
-5
0
+5
Output power of each tone PO(each) (dBm)
+10
Output power PO (dBm)
Saturated output power PO(sat) (dBm)
17
0.4
1
0.0
9
0.37
0.13
0.35
0.15
0.36
0.04
–80
–90
0.38
0.39
0.12
0.11
–100
0.40
0.10
–11
0
–70
4
0.3
6
0.1
–
1.4
1.6
3
0.3 7
0.1
1.8
2.0
NE
GA
0.4
0.4
0 2
.
0
8
0
00 .43
0.
07
30
0
0.2
12
0
–6
32
18
0.
0
1.
0.2
50
0
1.
0.6
20
10
5.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
N
2.0
5
0.
0.6
1.8
1.6
1.2
1.0
0.9
0.8
1.4
0.7
0.8
1.6
0.7
1.4
1.2
1.0
0.9
0
–1
0
–5
1.2
0
1.0
0.6
3.
0.9
0.8
4.0
0
1.
0.9 G
6.0
–11
0.6
1.8
5
0.
2.0
–1
0.2
0.3
O
0.4
3.
0
1.
0
4.0
5.0
0.
8
0.2
8
0.2
2
–20
0.8
0.6
0.27
0.23
0.7
20
0.40
0.10
–90
0.38
0.39
0.12
0.11
–100
0.37
0.13
0.36
0.04
–80
0.35
0.15
–70
4
0.3
6
0.1
( –Z–+–J–XTANCE CO
) MPO
(
)
0
1.
0.1
0.
8
0.4
10
–10
0.6
0.1 G
50
0
3
0.3 7
0.1
NE
G
0.4
0.2
0
1.
50
20
10
5.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
20
0.26
0.24
)
50
0.
0.1
0.3 7
3
0.2
00 9
0.2
0.3
1
–3
0.2 0
0
0
(
0
0.4
1
0.0
0.4
9
0 2
–1 .08
0.
20
4
0
00 3
.0
7
30
–6
0.
32
18
0.
0
0.2
600
0
)
0.1
6
0.3
4
0.
3
–4 0.1 1
0
9
VE
TI
0.6
3.
0.1
0.4
0.9 G
0.25
0.25
0.
5
0.8
4.0
T
NEN
PO
6.0
OM
EC
NC
TA
AC – JX
–
–Z–O
RE
–
E
IV
AT
8
0.6
0.2
0.
4
0.
8
0.6
0.1
0.4
0.2
0
1.
(
POS
14
ITIV
0
ER
EA
CT
A
––+JX NCE
ZO––
CO
M
PO
N
0.2
5.0
0.26
0.24
44
0. 06 40
0. –1
4.0
0.25
0.25
70
10
20
0.24
0.23
0.26
2
0.2
0.27
8
10
0.2
20
1.5 G
0.15
0.35
1
0.2
9
0.2
E
NC
TA
AC – JX
––
RE
––ZO
)
0.
4
WAVELE
NG
0
0.24
0.26
0.14
0.36
80
0
0.8
30
0.2
0
2
4
0.2
0
0.1
3.
0
0.6
0.27
0.2
0.23
8
0.2
2
–20
0.13
0.37
0.23
0.27
1.5 G
0.4 G
1.9
10
0.3
0.8
0.2
0.
THS
0
0.01
0.49
0.02 TOWARD
0.48
0
0.49
0.01
0.0 GENE
7
0.48
3
RA
0.4
0.0W2ARD LOADLECTION COEF
F
F
0.4
C
E
O
I
R
ENT IN
0.0TOR
6
.03THS T NGLE OF
7
4
D
0
.
E
4
G
G
0
REE
EN 160 A
0.4
0
L
4
S
E
–
6
0.0
0.0WAV
5
15
0.4 5
0
0.4 5
5
0
–1
5
0.0
0.6
–10
WAVELE
NGTH
S
0.4
0.3
1.9 G
90
0.
0. 06
44
2.0
5
0.
0.6
1.8
50
10
T
EN
40
RESISTANCE COMPONENT
R
––––
0.2
ZO
(
0.12
0.38
–5
0.2
1.6
1.2
1.0
0.9
0.8
1.4
0.7
0.1
0.3 7
3
8
20
0.11
0.39
100
600
19
0. 31
0.
4
0.10
0.40
110
0.1
6
0.3
4
0.
0. 31
19
8
0.0 2
0.4 20
1
)
0
0.
1.
0.2
0.1
70
1
0.2
9
0.2
RESISTANCE COMPONENT
R
––––
0.2
ZO
0.15
0.35
0
0.2 0
0.
–4
0.3
T
EN
0.14
0.36
80
0.2
00 9
0.2
0.3
1
–3
0.2 0
0
0
9
0.0
1
0.4
0.13
0.37
30
0.3
90
0.3
(
0.12
0.38
40
0.2
07
0. 3
4
0. 0
13
0.11
0.39
100
20
8
0.0 2
0.4 20
1
0.10
0.40
110
50
9
0.0
1
0.4
19
0. 31
0.
07
0. 3
4
0. 0
13
0
0.01
0.49
0.02 TOWARD
0.48
0
0.49
0.01
0.0 GENE
7
0.48
3
RA
0.4
0.0W2ARD LOADLECTION COEF
FCIENT
F
0.4
E
O
R
0.0TOR
3
T
F
O
6
IN DE
7
0.0GTHS ANGLE
4
G
0.4
R
N
EES
0.4
0
4 VELE –160
0
.
6
0.0
0 WA
5
15
0.4 5
0.4 5
50
0
1
0
–
5
0.
0.
4
0
4
POS
0.1
14 0.4 6
0. 06 40
ENT
ITIV
ON
0
ER
4
MP
0. –1
EA
CO
C
µPC2771T
S PARAMETERS
S11 - FREQUENCY (VCC = 3.0 V)
0.
0.
18
32
50
S22 - FREQUENCY (VCC = 3.0 V)
0.
0.
18
32
50
9
µPC2771T
- CHARACTERISTIC CURVES WITH ACTUAL APPLICATION COMPONENTS Specifications of sample chip inductor
Manufacturer
Product name
Inductance (nH)
Q Typ.
DC resistance (Ω)
Self-resonance
frequency
Allowable current
(mA)
Murata Mfg.
Co., Ltd.
LQN2A10NM
10
60
0.25 or less
1 000 MHz
770
INSERTION POWER GAIN vs.
FREQUENCY
ISOLATION vs. FREQUENCY
24
0
VCC = 3.0 V
VCC = 3.0 V
22
-10
Isolation ISL (dB)
Insertion power gain GP (dB)
VCC = 3.3 V
20
VCC = 2.7 V
18
16
-20
-30
-40
14
-50
0.3
0.1
1.0
3.0
0.3
0.1
Frequency f (GHz)
1.0
3.0
Frequency f (GHz)
INPUT RETURN LOSS, OUTPUT RETURN
LOSS vs. FREQUENCY
0
Input return loss RLin (dB)
Output return loss RLout (dB)
VCC = 3.0 V
-10
RLin
-20
RLout
-30
-40
0.3
0.1
1.0
3.0
Frequency f (GHz)
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
15
15
L = 10 nH
10
10
L = 300 to 1 000 nH
5
0
-5
5
L = 300 to 1 000 nH
0
-5
-10
-25
-20
-15
-10
Input power Pin (dBm)
10
L = 10 nH
f = 1.9 GHz
Output power PO (dBm)
Output power PO (dBm)
f = 1.5 GHz
-5
0
-25
-20
-15
-10
Input power Pin (dBm)
-5
0
µPC2771T
EXAMPLE OF EVALUATION BOARD FOR TEST CIRCUIT
3
Top View
OUT
H
C
C
6
5
L
4
C2
1
2
IN
Mounting direction
C
VCC
Component List
Note
Value
1. 30 × 30 × 0.4 mm double sided copper clad polyimide board.
C
1 000 pF
2. Back side: GND pattern
L
300 nH
3. Solder plated on pattern
4.
: Through holes
11
µPC2771T
DIMENSIONS OF 6-PIN MINI-MOLD PACKAGE (Units: mm)
+0.1
0.3 –0.05
2
3
+0.2
1.5 –0.3
0 – 0.1
6
5
4
0.95 0.95
1.9
2.9±0.2
12
0.8
+0.2
1.1– 0.1
0.2 MIN.
+0.2
2.8 –0.3
1
0.13±0.1
µPC2771T
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as wide as possible to maintain the minimum ground impedance (to prevent undesired
oscillation).
(3) Keep the wiring length of the ground pins as short as possible.
(4) Connect a bypass capacitor to the VCC pin.
(5) Insert a inductor (e.g. 300 nH) between output pin and VCC pin.
RECOMMENDED SOLDERING CONDITIONS
The conditions listed below shall be satisfied when soldering this product.
Consult your NEC sales offices when using any other soldering process, or when soldering is done under different
conditions.
µPC2771T
SOLDERING PROCESS
SOLDERING CONDITIONS
SYMBOL
Infrared ray reflow
Peak package surface temperature
Reflow time
Number of reflow processes
Exposure limitNote
:
:
:
:
235 °C
30 seconds or less (at 210 °C or more)
3
None
IR35-00-3
VPS
Peak package surface temperature
Reflow time
Number of reflow processes
Exposure limitNote
:
:
:
:
215 °C
40 seconds or less (at 200 °C or more)
3
None
VP15-00-3
Wave soldering
Solder temperature
Flow time
: 260 °C
: 10 seconds or less
Number of flow processes
Exposure limitNote
: 1
: None
Solder temperature
Flow time
Exposure limitNote
: 300 °C or less
: 3 seconds or less/pin.
: None
Partial heating method
WS60-00-1
Note Exposure limit before soldering after dry-pack package is opened.
Storage conditions: Temperature of 25 °C and maximum relative humidity of 65%
Caution
Do not apply more than a single process at once, except for "Partial heating method".
For details of the recommended soldering conditions, refer to the "SMD Surface Mount Technology Manual"
(C10535EJ7V0IF00).
13
µPC2771T
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELECTROSTATIC
SENSITIVE
DEVICES
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.