S T U/D3055L S amHop Microelectronics C orp. MAR ,09 2005 ver1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable. 70 @ V G S = 10V 25V TO-252 and TO-251 P ackage. 12A 95 @ V G S = 4.5V D D G D G S S TU S E R IE S TO-252AA(D-P AK) S G S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (T C =25 C unless otherwise noted) S ymbol P arameter Limit Unit Drain-S ource Voltage V DS 25 V Gate-S ource Voltage V GS 16 V ID 12 A IDM 40 A Drain-S ource Diode Forward C urrent IS 5 A Maximum P ower Dissipation @ Tc=25 C PD 50 W T J , T S TG -55 to 175 C Drain C urrent-C ontinuous a -P ulsed @ TJ=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase R JC 3 C /W Thermal R esistance, Junction-to-Ambient R JA 50 C /W 1 S T U/D3055L E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 20V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 16V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1.1 1.8 V R DS (ON) V GS =10V, ID =4A 50 70 m-ohm Drain-S ource On-S tate R esistance V GS =4.5V, ID = 3A 62 95 m-ohm OFF CHAR ACTE R IS TICS 25 V ON CHAR ACTE R IS TICS b ID(ON) gFS On-S tate Drain Current Forward Transconductance V DS = 5V, V GS = 4.5V V DS = 10V, ID = 5.0A 0.8 15 A 6 S DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =8V, V GS = 0V f =1.0MH Z 240 285 PF 97 113 PF 68 80 PF c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd 16.2 19.2 ns 18.4 21 ns 10.1 11.5 ns 23.3 26 ns V DS =10V,ID =4A,V GS =10V 5.9 6.5 nC V DS =10V,ID =4A,V GS =4.5V 3.2 3.5 nC V DS =10V, ID = 4A, V GS =10V 1.3 0.8 1.6 nC 1 nC V DD = 10V, ID = 1A, V GE N = 4.5V, R L = 10 ohm R GEN = 6 ohm 2 S T U/D3055L E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage 1.0 V GS = 0V, Is =5A VSD V Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 15 20 V G S =4.5V 12 V G S =4V 12 V G S =10V 8 4 V G S =2V 0 1 2 3 4 5 T j=125 C I D , Drain C urrent (A) ID , Drain C urrent(A) 16 0 9 6 3 0 0.0 6 V DS , Drain-to-S ource Voltage (V ) 300 C is s 200 100 4 8 12 16 20 3 4 5 6 V G S =10V I D =4A 1.8 1.4 1.0 0.6 0.2 C os s C rs s 0 R DS (ON) , On-R es is tance Normalized 400 2 F igure 2. Trans fer C haracteris tics 2.2 500 1 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 0 25 C -55 C V G S =5V C , C apacitance (pF ) 5 C Min Typ Max Unit Condition S ymbol 0 24 -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 4. On-R es is tance Variation with Temperature F igure 3. C apacitance 3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0 25 50 75 100 125 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 12 20 10 10 Is , S ource-drain current (A) 8 6 4 2 0 V DS =10V 0 3 6 9 12 1 T J =25 C 0 0 15 0.4 0.8 1.2 1.6 2.0 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 it 10 6 4 2 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 1s 11 0.1 0m ms s DC V G S =10V S ingle P ulse T c=25 C 0.1 Qg, T otal G ate C harge (nC ) 10 10 0.03 0 ON) 8 L im V DS =10V I D =4A R DS ( gF S , T rans conductance (S ) -50 -25 V G S , G ate to S ource V oltage (V ) B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 I D , Drain C urrent (A) V th, Normalized G ate-S ource T hres hold V oltage S T U/D3055L 1 10 20 50 V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 S DU/D3055L V DD ton V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL 10% INVE R TE D 10% 6 G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 1. 2. 3. 4. 0.01 S ING LE P ULS E 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 t2 R θJ A (t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A (t) Duty C ycle, D=t1/t2 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 10 S T U/D3055L 5 95 7 84 L2 9 6.00 35 05 85 0.94 4 3 0 9 36 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 6 9 7 30 3 3 41 3 3 5 1 4 BSC 398 0.064 33 REF. S T U/D3055L TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube " A" TO-252 Carrier Tape UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 6.80 ±0.1 B0 K0 10.3 ±0.1 2.50 ±0.1 D0 D1 E E1 E2 P0 P1 P2 T ψ2 ψ1.5 + 0.1 - 0 16.0 0.3± 1.75 0.1± 7.5 ±0.15 8.0 ±0.1 4.0 ±0.1 2.0 ±0.15 0.3 ±0.05 TO-252 Reel S UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE M N W T H ψ 330 ψ330 ± 0.5 ψ97 ± 1.0 17.0 + 1.5 - 0 2.2 ψ13.0 + 0.5 - 0.2 7 K S 10.6 2.0 ±0.5 G R V