2SC5003 A IB 3.5 A PC 80(Tc=25°C) W 150 °C –55 to +150 °C Tj Tstg V V V MHz pF 0.8±0.2 5.5 ø3.3±0.2 a b 1.75 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) tstg (µs) tf (µs) 200 50 4 10 –5 0.8 –1.6 4.0max 0.2max 3 300mA 2 I B =100mA 1 0 0 1 2 3 (I C : I B = 5 :1) 6 1 0 4 0.2 0.5 Collector-Emitter Voltage V C E (V) 1 5 0 10 20 t st g• t f (µ s) ˚C 0˚C 5 2 0.02 0.05 0.1 0.5 1 5 7 . V C C =200V . I C : I B 1 : –I B 2 =5 :1: 2 10 Transient Thermal Resistance Switching T im e DC Cur rent Gain h F E 5˚C –3 0.5 t stg 5 tf 1 0.5 0.1 0.2 0.5 1 5 7 1 0.5 0.1 1 10 1000 2000 P c – T a Derating 20 20 100 Time t(ms) Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 1.5 3 Collector Current I C (A) Collector Current I C (A) 1.0 θ j-a – t Characteristics t stg •t f – I C Characteristics (Typical) 50 10 0 Base-Emittor Voltage V B E (V) (V C E =5V) 25 2 Collector Current I C (A) h FE – I C Characteristics (Typical) 12 4 mp) 2 e Te 600 mA 4 (V CE =5V) 7 3 ase Te 5 E (Cas Collector Current I C (A) 900 mA Weight : Approx 6.5g a. Type No. b. Lot No. 25˚C (C 6 C 125˚C 1. 4A Collector Current I C (A) A 3.35 1.5 I C – V BE Temperature Characteristics (Typical) θ j - a (˚C /W ) 1.7 Collector-Emitter Saturation Voltage V C E (s at) (V) 7 4.4 B VCE(sat)–IC Characteristics (Typical) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 1.5 RL (Ω) 0.8 2.15 5.45±0.1 VCC (V) 3.45 ±0.2 3.0 V 7(Pulse14) 5.5±0.2 1.6 6 IC VEBO 15.6±0.2 3.3 V Unit µA mA mA V Temp) 800 2SC5003 100max 1max 1max 6min 8min 4 to 9 5max 1.5max 2.0max 4typ 100typ (Case VCEO Conditions VCB=1200V VCB=1500V VCE=800V IEB=300mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A IEC=7A VCE=12V, IE=–0.5A VCB=10V, f=1MHz Symbol ICBO1 ICBO2 ICEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) VFEC fT COB External Dimensions FM100(TO3PF) (Ta=25°C) –30˚C V ■Electrical Characteristics mp) Unit 1500 E Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose 23.0±0.3 2SC5003 VCBO Symbol ( 50 Ω ) 9.5±0.2 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) C B 16.2 Built-in Damper Diode ■Absolute maximum ratings (Ta=25°C) Equivalent circuit 80 100µs Collector-Emitter Voltage V C E (V) 2000 Co lle ctor Cu rre nt I C ( A) Co lle ctor Cu rre nt I C ( A) nk 1000 si 500 40 at 100 he 0.1 50 ite Collector-Emi tter Voltage V C E (V) 1000 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% fin 500 0.5 In 1 100 1 60 ith Without Heatsink Natural Cooling 5 W 5 M aximu m Power Dissipa tion P C (W) 10 10 20 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 123