STMICROELECTRONICS IRF630MFP

IRF630M
IRF630MFP
N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP
MESH OVERLAY™ MOSFET
TYPE
■
■
■
■
VDSS
RDS(on)
ID
IRF630M
200 V
< 0.40 Ω
9A
IRF630FPM
200 V
< 0.40 Ω
9A
TYPICAL RDS(on) = 0.35 Ω
EXTREMELY HIGH dv/dt CAPABILITY
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
1
3
2
1
TO-220
DESCRIPTION
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and
improves the performances compared with standard
parts from various sources.
Isolated TO-220 option simplifies assembly and cuts
risk of accidental short circuit in crowded monitor
PCB’s.
2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
.APPLICATIONS
■ MONITOR DISPLAYS
■ GENERAL PURPOSE SWITCH
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
IRF630M
VDS
VDGR
VGS
Unit
IRF630MFP
Drain-source Voltage (VGS = 0)
200
V
Drain-gate Voltage (RGS = 20 kΩ)
200
V
Gate- source Voltage
± 20
V
ID
Drain Current (continuos) at TC = 25°C
9
9 (**)
A
ID
Drain Current (continuos) at TC = 100°C
5.7
5.7 (**)
A
Drain Current (pulsed)
36
36
A
IDM (●)
PTOT
Total Dissipation at TC = 25°C
75
30
W
Derating Factor
0.6
0.24
W/°C
5
V/ns
dv/dt (1)
Peak Diode Recovery voltage slope
5
VISO
Insulation Winthstand Voltage (DC)
--
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
October 2001
2500
V
–65 to 150
°C
150
°C
(1)ISD ≤9A, di/dt ≤300A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
(**) Limited only by Maximum Temperature Allowed
1/9
IRF630M / FP
THERMAL DATA
TO-220
TO-220FP
1.67
4.17
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Tl
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
Min.
Typ.
Max.
200
Unit
V
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
±100
nA
ON (1)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 4.5 A
Min.
Typ.
Max.
Unit
2
3
4
V
0.35
0.40
Ω
Min.
Typ.
Max.
Unit
3
4
DYNAMIC
Symbol
gfs (1)
2/9
Parameter
Forward Transconductance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 4.5 A
VDS = 25V, f = 1 MHz, VGS = 0
S
Ciss
Input Capacitance
540
700
pF
Coss
Output Capacitance
90
120
pF
Crss
Reverse Transfer
Capacitance
35
50
pF
IRF630M / FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
Min.
VDD = 100 V, ID = 4.5 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
VDD = 160V, ID = 9 A,
VGS = 10V
Typ.
Max.
Unit
10
14
ns
15
20
ns
31
45
nC
7.5
nC
9
nC
SWITCHING OFF
Symbol
tr(Voff)
Parameter
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
Min.
VDD = 160V, ID = 9 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Typ.
Max.
Unit
12
17
ns
12
17
ns
25
35
ns
Typ.
Max.
Unit
9
A
SOURCE DRAIN DIODE
Symbol
ISD
Parameter
Test Conditions
Min.
Source-drain Current
ISDM (2)
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 9 A, VGS = 0
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 9 A, di/dt = 100A/µs
VDD = 50 V, Tj = 150°C
(see test circuit, Figure 5)
IRRM
Reverse Recovery Current
36
A
1.5
V
170
ns
0.95
µC
11
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
IRF630M / FP
Thermal Impedence for TO-220
Thermal Impedence for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
IRF630M / FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
IRF630M / FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
IRF630M / FP
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L4
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
7/9
IRF630M / FP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
¯
F
F1
L7
1 2 3
L2
8/9
L4
IRF630M / FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
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