IXGC16N60C2D1

IXGC 16N60C2
HiPerFASTTM IGBT
IXGC 16N60C2D1
C2-Class High Speed
IGBT in ISOPLUS220TM Case
VCES
IC25
VCE(sat)
Electrically Isolated Back Surface
tfi(typ)
= 600 V
= 20 A
= 3.0 V
= 35 ns
Preliminary Data Sheet
D1
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
20
A
IC110
TC = 110°C
8
A
ID110
TC = 110°C (IXGC16N60C2D1 diode)
10
A
ICM
TC = 25°C, 1 ms
100
A
SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 22 Ω
Clamped inductive load
ICM = 32
@0.8 VCES
A
PC
TC = 25°C
63
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
11..65/2.5..15
N/lb.
TJ
FC
Mounting Force
VISOL
Isolation Voltage; 50/60Hz; t = 1minute; RMS
G
V
300
°C
2
g
G = Gate
E = Emitter
z
z
z
z
z
z
z
z
z
z
Test Conditions
VGE(th)
IC = 250 µA, VCE = VGE
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = 12 A, VGE = 15 V
Note 2
© 2004 IXYS All rights reserved
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
2.5
16N60C2
16N60C2D1
TJ=125°C
E
Isolated back surface*
C = Collector
DCB Isolated mounting tab
UL recognized (E153432)
Meets TO-273 package Outline
High current handling capability
MOS Gate turn-on
- drive simplicity
Epoxy meets UL94V-0 flammability
classification
Applications
Weight
Symbol
C
Features
2500
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
ISOPLUS 220TM (IXGC)
E153432
2.7
2.1
5.0
V
25
50
µA
µA
±100
nA
3.0
V
V
z
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
z
z
z
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
DS99149A(11/04)
IXGC 16N60C2
IXGC 16N60C2D1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = 12A; VCE = 10 V,
Note 2.
Cies
VCE = 25 V, VGE = 0 V, f = 1 MHz
8
12
S
720
pF
55
65
pF
pF
19
pF
32
nC
Qge
6
nC
Qgc
10
nC
25
ns
Coes
16N60C2
16N60C2D1
Cres
Qg
td(on)
tri
td(off)
tfi
IC = 20A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°°C
15
IC = 12 A; VGE = 15 V
VCE = 400 V; RG = Roff = 22 Ω
Note 1.
Eoff
td(on)
tri
Eon
td(off)
tfi
ns
60
120
ns
35
100
ns
60
100
µJ
25
Inductive load, TJ = 125°°C
IC = 12A; VGE = 15 V
VCE = 400 V; RG = Roff = 22 Ω
16N60C2D1
Note 1
ns
18
ns
0.38
mJ
115
ns
70
ns
Eoff
150
µJ
RthJC
RthCK
0.25
2.0 K/W
K/W
Reverse Diode (FRED)
Symbol
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Test Conditions
VF
IF = 10 A, VGE = 0 V
IRM
t rr
IF = 12 A; -diF/dt = 100 A/µs, VR = 100 V
VGE = 0 V; TJ = 125°C
t rr
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V
2.66
1.66
TJ = 125°C
V
V
2.5
110
A
ns
30
ns
2.5 K/W
RthJC
Notes:
ISOPLUS220 Outline
1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ,
or increased RG.
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692