DCCOM 2SB857

DC COMPONENTS CO., LTD.
2SB857
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency power amplifier.
TO-220AB
Pinning
1 = Base
2 = Collector
3 = Emitter
.405(10.28)
.380(9.66)
.295(7.49)
.220(5.58)
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-70
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current (continuous)
IC
-4
A
Collector Current (peak)
IC
-8
A
Total Power Dissipation(TC=25 C)
PD
40
W
Junction Temperature
TJ
+150
o
-55 to +150
o
o
Storage Temperature
TSTG
.185(4.70)
.173(4.40)
Φ.151
Typ
.055(1.39)
Φ(3.83)
.045(1.15)
.625(15.87)
.570(14.48)
.350(8.90)
.330(8.38)
.640
Typ
(16.25)
1 2 3
.562(14.27)
.500(12.70)
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.100
Typ
(2.54)
.024(0.60)
.014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
Characteristic
BVCBO
-70
-
-
V
Test Conditions
Collector-Emitter Breakdown Voltage
BVCEO
-50
-
-
V
IC=-50mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO
-5
-
-
V
IE=-10µA, IC=0
IC=-10µA, IE=0
ICBO
-
-
-1
µA
VCB=-50V, IE=0
Collector-Emitter Saturation Voltage(1)
VCE(sat)
-
-
-1
V
IC=-2A, IB=-0.2A
Base-Emitter On Voltage(1)
VBE(on)
-
-
-1
V
IC=-1A, VCE=-4V
hFE1
35
-
-
-
IC=-0.1A, VCE=-4V
hFE2
60
-
320
-
IC=-1A, VCE=-4V
fT
-
15
-
MHz
Collector Cutoff Current
DC Current Gain(1)
Transition Frequency
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
2%
Classification of hFE2
Rank
B
C
D
Range
60~120
100~200
160~320
IC=-500mA, VCE=-4V, f=100MHz