DC COMPONENTS CO., LTD. 2SB772 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126 Pinning .304(7.72) .285(7.52) 1 = Emitter 2 = Collector 3 = Base .105(2.66) .095(2.41) .041(1.05) .037(0.95) .154(3.91) .150(3.81) Absolute Maximum Ratings(TA=25oC) Symbol Rating Unit Collector-Base Voltage Characteristic VCBO -40 V Collector-Emitter Voltage VCEO -30 V VEBO -5 V IC -3 A Collector Current(Pulse) IC -7 A Base Current(DC) IB -0.6 A PD 10 W o o Total Power Dissipation(TA=25 C) PD 1 Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o o 3 Typ 2 3 .052(1.32) .048(1.22) Emitter-Base Voltage Total Power Dissipation(TC=25 C) .279(7.09) .275(6.99) 1 Collector Current(DC) .152(3.86) .138(3.50) .055(1.39) .045(1.14) o 3 Typ .620(15.75) .600(15.25) .022 (0.55) Typ .032(0.81) .028(0.71) o 3 Typ .189(4.80) .171(4.34) W o 3 Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -40 - - V IC=-100µA Collector-Emitter Breakdown Voltage BVCEO -30 - - V IC=-1mA Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10µA ICBO - - -1 µA VCB=-30V Collector Cutoff Current Test Conditions IEBO - - -1 µA VEB=-3V Collector-Emitter Saturation Voltage(1) VCE(sat) - -0.3 -0.5 V IC=-2A, IB=-0.2A Base-Emitter Saturation Voltage(1) VBE(sat) - -1 -2 V IC=-2A, IB=-0.2A Emitter Cutoff Current (1) DC Current Gain hFE1 30 - - - IC=-20mA, VCE=-2V hFE2 100 200 400 - IC=-1A, VCE=-2V Transition Frequency fT - 80 - MHz Output Capacitance Cob - 55 - pF (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE2 Rank Q P E Range 100~200 160~320 200~400 IC=-0.1A, VCE=-5V IE=0, VCB=-10V, f=1MHz