TI LM2661MX_NOPB

LM2660
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SNVS135D – SEPTEMBER 1999 – REVISED MAY 2013
LM2660 Switched Capacitor Voltage Converter
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FEATURES
DESCRIPTION
•
•
•
•
•
The LM2660 CMOS charge-pump voltage converter
is a versatile unregulated switched capacitor inverter
or doubler. Operating from a wide 1.5V to 5.5V
supply voltage, the LM2660 uses two low-cost
capacitors to provide 100 mA of output current
without the cost, size and EMI related to inductorbased converters. With an operating current of only
120 µA and operating efficiency greater than 90% at
most loads, the LM2660 provides ideal performance
for battery-powered systems. LM2660 devices can be
operated directly in parallel to lower output
impedance, thus providing more current at a given
voltage.
1
2
•
Inverts or Doubles Input Supply Voltage
Narrow SO-8 and Mini SO-8 Package
6.5Ω Typical Output Resistance
88% Typical Conversion Efficiency at 100 mA
Selectable Oscillator Frequency: 10 kHz/80
kHz
Optional External Oscillator Input
APPLICATIONS
•
•
•
•
•
•
Laptop Computers
Cellular Phones
Medical Instruments
Operational Amplifier Power Supplies
Interface Power Supplies
Handheld Instruments
The FC (frequency control) pin selects between a
nominal 10 kHz or 80 kHz oscillator frequency. The
oscillator frequency can be lowered by adding an
external capacitor to the OSC pin. Also, the OSC pin
may be used to drive the LM2660 with an external
clock up to 150 kHz. Through these methods, output
ripple frequency and harmonics may be controlled.
Additionally, the LM2660 may be configured to divide
a positive input voltage precisely in half. In this mode,
input voltages as high as 11V may be used.
Basic Application Circuits
Voltage Inverter
Positive Voltage Doubler
Splitting VIN in Half
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1999–2013, Texas Instruments Incorporated
LM2660
SNVS135D – SEPTEMBER 1999 – REVISED MAY 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
(1) (2)
Absolute Maximum Ratings
Supply Voltage (V+ to GND, or GND to OUT)
6V
(OUT − 0.3V) to (GND + 3V)
LV
The least negative of (OUT − 0.3V)
or (V+ − 6V) to (V+ + 0.3V)
FC, OSC
V+ and OUT Continuous Output Current
120 mA
(3)
1 sec.
Output Short-Circuit Duration to GND
Package
Power Dissipation
(TA = 25°C)
TJ Max
θJA
(4)
(4)
(4)
SOIC (D)
VSSOP (DGK)
735 mW
500 mW
150°C
150°C
170°C/W
250°C/W
Operating Junction Temperature Range
−40°C to +85°C
Storage Temperature Range
−65°C to +150°C
Lead Temperature (Soldering, 10 seconds)
300°C
ESD Rating
(1)
(2)
(3)
(4)
2
2 kV
Absolute maximum ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when
operating the device beyond its rated operating conditions.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
OUT may be shorted to GND for one second without damage. However, shorting OUT to V+ may damage the device and should be
avoided. Also, for temperatures above 85°C, OUT must not be shorted to GND or V+, or device may be damaged.
The maximum allowable power dissipation is calculated by using PDMax = (TJMax − TA)/θJA, where TJMax is the maximum junction
temperature, TA is the ambient temperature, and θJA is the junction-to-ambient thermal resistance of the specified package.
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Electrical Characteristics
Limits in standard typeface are for TJ = 25°C, and limits in boldface type apply over the full operating temperature range.
Unless otherwise specified: V+ = 5V, FC = Open, C1 = C2 = 150 μF. (1)
Symbol
V+
Parameter
Supply Voltage
RL = 1k
IQ
Supply Current
IL
Output Current
ROUT
Output Resistance
fOSC
Oscillator Frequency
fSW
Switching Frequency
IOSC
OSC Input Current
PEFF
(2)
3.5
5.5
Inverter, LV = GND
1.5
5.5
Doubler, LV = OUT
2.5
5.5
FC = Open
LV = Open
FC = V+
TA ≤ +85°C, OUT ≤ −4V
100
TA > +85°C, OUT ≤ −3.8V
100
OSC = Open
Power Efficiency
Min
Inverter, LV = Open
No Load
IL = 100 mA
(3)
Condition
OSC = Open
TA ≤ +85°C
(1)
(2)
(3)
Voltage Conversion Efficiency
0.5
1
3
Units
V
mA
mA
TA > +85°C
10
12
FC = Open
5
10
FC = V+
40
80
FC = Open
2.5
5
FC = V+
20
40
FC = Open
±2
FC = V+
±16
RL (1k) between V+ and OUT
96
98
RL (500) between GND and OUT
92
96
No Load
Max
0.12
6.5
IL = 100 mA to GND
VOEFF
Typ
Ω
kHz
kHz
µA
%
88
99
99.96
%
In the test circuit, capacitors C1 and C2 are 0.2Ω maximum ESR capacitors. Capacitors with higher ESR will increase output resistance,
reduce output voltage and efficiency.
Specified output resistance includes internal switch resistance and capacitor ESR.
The output switches operate at one half of the oscillator frequency, fOSC = 2fSW.
Test Circuits
Figure 1. LM2660 Test Circuit
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Typical Performance Characteristics
(Circuit of Figure 1)
4
Supply Current
vs
Supply Voltage
Supply Current
vs
Oscillator Frequency
Figure 2.
Figure 3.
Output Source Resistance
vs
Supply Voltage
Output Source Resistance
vs
Temperature
Figure 4.
Figure 5.
Efficiency
vs
Load Current
Output Voltage Drop
vs
Load Current
Figure 6.
Figure 7.
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Typical Performance Characteristics (continued)
(Circuit of Figure 1)
Efficiency
vs
Oscillator Frequency
Output Voltage
vs
Oscillator Frequency
Figure 8.
Figure 9.
Oscillator Frequency
vs
External Capacitance
Oscillator Frequency
vs
Supply Voltage (FC = V+)
Figure 10.
Figure 11.
Oscillator Frequency
vs
Supply Voltage (FC = Open)
Oscillator Frequency
vs
Temperature (FC = V+)
Figure 12.
Figure 13.
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Typical Performance Characteristics (continued)
(Circuit of Figure 1)
Oscillator Frequency
vs
Temperature (FC = Open)
Figure 14.
CONNECTION DIAGRAMS
Figure 15. Top View
8-Lead SOIC (D) or VSSOP (DGK)
Pin Description
Pin
Function
Name
Voltage Inverter
Voltage Doubler
Frequency control for internal oscillator:
FC = open, fOSC = 10 kHz (typ);
1
FC
FC = V+, fOSC = 80 kHz (typ);
Same as inverter.
FC has no effect when OSC pin is driven
externally.
6
2
CAP+
Connect this pin to the positive terminal of chargeSame as inverter.
pump capacitor.
3
GND
Power supply ground input.
Power supply positive voltage input.
4
CAP−
Connect this pin to the negative terminal of
charge-pump capacitor.
Same as inverter.
5
OUT
Negative voltage output.
Power supply ground input.
Low-voltage operation input. Tie LV to GND when
input voltage is less than 3.5V. Above 3.5V, LV
can be connected to GND or left open. When
driving OSC with an external clock, LV must be
connected to GND.
LV must be tied to OUT.
6
LV
7
OSC
8
V+
Oscillator control input. OSC is connected to an
internal 15 pF capacitor. An external capacitor can Same as inverter except that OSC cannot be driven by
be connected to slow the oscillator. Also, an
an external clock.
external clock can be used to drive OSC.
Power supply positive voltage input.
Positive voltage output.
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Circuit Description
The LM2660 contains four large CMOS switches which are switched in a sequence to invert the input supply
voltage. Energy transfer and storage are provided by external capacitors. Figure 16 illustrates the voltage
conversion scheme. When S1 and S3 are closed, C1 charges to the supply voltage V+. During this time interval
switches S2 and S4 are open. In the second time interval, S1 and S3 are open and S2 and S4 are closed, C1 is
charging C2. After a number of cycles, the voltage across C2 will be pumped to V+. Since the anode of C2 is
connected to ground, the output at the cathode of C2 equals −(V+) assuming no load on C2, no loss in the
switches, and no ESR in the capacitors. In reality, the charge transfer efficiency depends on the switching
frequency, the on-resistance of the switches, and the ESR of the capacitors.
Figure 16. Voltage Inverting Principle
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APPLICATION INFORMATION
SIMPLE NEGATIVE VOLTAGE CONVERTER
The main application of LM2660 is to generate a negative supply voltage. The voltage inverter circuit uses only
two external capacitors as shown in the Basic Application Circuits. The range of the input supply voltage is 1.5V
to 5.5V. For a supply voltage less than 3.5V, the LV pin must be connected to ground to bypass the internal
regulator circuitry. This gives the best performance in low voltage applications. If the supply voltage is greater
than 3.5V, LV may be connected to ground or left open. The choice of leaving LV open simplifies the direct
substitution of the LM2660 for the LMC7660 Switched Capacitor Voltage Converter.
The output characteristics of this circuit can be approximated by an ideal voltage source in series with a resistor.
The voltage source equals −(V+). The output resistance Rout is a function of the ON resistance of the internal
MOS switches, the oscillator frequency, and the capacitance and ESR of C1 and C2. A good approximation is:
(1)
where RSW is the sum of the ON resistance of the internal MOS switches shown in Figure 16.
High value, low ESR capacitors will reduce the output resistance. Instead of increasing the capacitance, the
oscillator frequency can be increased to reduce the 2/(fosc × C1) term. Once this term is trivial compared with RSW
and ESRs, further increasing in oscillator frequency and capacitance will become ineffective.
The peak-to-peak output voltage ripple is determined by the oscillator frequency, and the capacitance and ESR
of the output capacitor C2:
(2)
Again, using a low ESR capacitor will result in lower ripple.
POSITIVE VOLTAGE DOUBLER
The LM2660 can operate as a positive voltage doubler (as shown in the Basic Application Circuits). The doubling
function is achieved by reversing some of the connections to the device. The input voltage is applied to the GND
pin with an allowable voltage from 2.5V to 5.5V. The V+ pin is used as the output. The LV pin and OUT pin must
be connected to ground. The OSC pin can not be driven by an external clock in this operation mode. The
unloaded output voltage is twice of the input voltage and is not reduced by the diode D1's forward drop.
The Schottky diode D1 is only needed for start-up. The internal oscillator circuit uses the V+ pin and the LV pin
(connected to ground in the voltage doubler circuit) as its power rails. Voltage across V+ and LV must be larger
than 1.5V to insure the operation of the oscillator. During startup, D1 is used to charge up the voltage at V+ pin to
start the oscillator; also, it protects the device from turning-on its own parasitic diode and potentially latching-up.
Therefore, the Schottky diode D1 should have enough current carrying capability to charge the output capacitor
at start-up, as well as a low forward voltage to prevent the internal parasitic diode from turning-on. A Schottky
diode like 1N5817 can be used for most applications. If the input voltage ramp is less than 10V/ms, a smaller
Schottky diode like MBR0520LT1 can be used to reduce the circuit size.
SPLIT V+ IN HALF
Another interesting application shown in the Basic Application Circuits is using the LM2660 as a precision voltage
divider. Since the off-voltage across each switch equals VIN/2, the input voltage can be raised to +11V.
CHANGING OSCILLATOR FREQUENCY
The internal oscillator frequency can be selected using the Frequency Control (FC) pin. When FC is open, the
oscillator frequency is 10 kHz; when FC is connected to V+, the frequency increases to 80 kHz. A higher
oscillator frequency allows smaller capacitors to be used for equivalent output resistance and ripple, but
increases the typical supply current from 0.12 mA to 1 mA.
The oscillator frequency can be lowered by adding an external capacitor between OSC and GND. (See Typical
Performance Characteristics.) Also, in the inverter mode, an external clock that swings within 100 mV of V+ and
GND can be used to drive OSC. Any CMOS logic gate is suitable for driving OSC. LV must be grounded when
driving OSC. The maximum external clock frequency is limited to 150 kHz.
8
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The switching frequency of the converter (also called the charge pump frequency) is half of the oscillator
frequency.
NOTE
OSC cannot be driven by an external clock in the voltage-doubling mode.
Table 1. LM2660 Oscillator Frequency Selection
FC
OSC
Oscillator
Open
Open
10 kHz
V+
Open
80 kHz
Open or V+
External Capacitor
See Typical Performance Characteristics
N/A
External Clock
External Clock
(inverter mode only)
Frequency
CAPACITOR SELECTION
As discussed in the SIMPLE NEGATIVE VOLTAGE CONVERTER section, the output resistance and ripple
voltage are dependent on the capacitance and ESR values of the external capacitors. The output voltage drop is
the load current times the output resistance, and the power efficiency is
(3)
Where IQ(V+) is the quiescent power loss of the IC device, and IL2ROUT is the conversion loss associated with the
switch on-resistance, the two external capacitors and their ESRs.
Since the switching current charging and discharging C1 is approximately twice as the output current, the effect
of the ESR of the pumping capacitor C1 is multiplied by four in the output resistance. The output capacitor C2 is
charging and discharging at a current approximately equal to the output current, therefore, its ESR only counts
once in the output resistance. However, the ESR of C2 directly affects the output voltage ripple. Therefore, low
ESR capacitors (Table 2) are recommended for both capacitors to maximize efficiency, reduce the output voltage
drop and voltage ripple. For convenience, C1 and C2 are usually chosen to be the same.
The output resistance varies with the oscillator frequency and the capacitors. In Figure 17, the output resistance
vs. oscillator frequency curves are drawn for three different tantalum capacitors. At very low frequency range,
capacitance plays the most important role in determining the output resistance. Once the frequency is increased
to some point (such as 20 kHz for the 150 μF capacitors), the output resistance is dominated by the ON
resistance of the internal switches and the ESRs of the external capacitors. A low value, smaller size capacitor
usually has a higher ESR compared with a bigger size capacitor of the same type. For lower ESR, use ceramic
capacitors.
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Figure 17. Output Source Resistance vs Oscillator Frequency
Table 2. Low ESR Capacitor Manufacturers
Manufacturer
Capacitor Type
Nichicon Corp.
PL, PF series, through-hole aluminum electrolytic
AVX Corp.
TPS series, surface-mount tantalum
Sprague
593D, 594D, 595D series, surface-mount tantalum
Sanyo
OS-CON series, through-hole aluminum electrolytic
Other Applications
PARALLELING DEVICES
Any number of LM2660s can be paralleled to reduce the output resistance. Each device must have its own
pumping capacitor C1, while only one output capacitor Cout is needed as shown in Figure 18. The composite
output resistance is:
Rout =
Rout of each LM2660
Number of Devices
(4)
Figure 18. Lowering Output Resistance by Paralleling Devices
10
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CASCADING DEVICES
Cascading the LM2660s is an easy way to produce a greater negative voltage (as shown in Figure 19). If n is the
integer representing the number of devices cascaded, the unloaded output voltage Vout is (−nVin). The effective
output resistance is equal to the weighted sum of each individual device:
(5)
A three-stage cascade circuit shown in Figure 20 generates −3Vin, from Vin.
Cascading is also possible when devices are operating in doubling mode. In Figure 21, two devices are
cascaded to generate 3Vin.
An example of using the circuit in Figure 20 or Figure 21 is generating +15V or −15V from a +5V input.
Note that, the number of n is practically limited since the increasing of n significantly reduces the efficiency and
increases the output resistance and output voltage ripple.
Figure 19. Increasing Output Voltage by Cascading Devices
Figure 20. Generating −3Vin from +Vin
Figure 21. Generating +3Vin from +Vin
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REGULATING Vout
It is possible to regulate the output of the LM2660 by use of a low dropout regulator (such as LP2951). The
whole converter is depicted in Figure 22. This converter can give a regulated output from −1.5V to −5.5V by
choosing the proper resistor ratio:
(6)
where, Vref = 1.235V
The error flag on pin 5 of the LP2951 goes low when the regulated output at pin 4 drops by about 5%. The
LP2951 can be shutdown by taking pin 3 high.
Figure 22. Combining LM2660 with LP2951 to Make a Negative Adjustable Regulator
Also, as shown in Figure 23 by operating LM2660 in voltage doubling mode and adding a linear regulator (such
as LP2981) at the output, we can get +5V output from an input as low as +3V.
Figure 23. Generating +5V from +3V Input Voltage
12
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SNVS135D – SEPTEMBER 1999 – REVISED MAY 2013
REVISION HISTORY
Changes from Revision C (May 2013) to Revision D
•
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 12
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PACKAGE OPTION ADDENDUM
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2-May-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
LM2660M
ACTIVE
SOIC
D
8
95
TBD
Call TI
Call TI
-40 to 85
LM26
60M
LM2660M/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LM26
60M
LM2660MM
ACTIVE
VSSOP
DGK
8
1000
TBD
Call TI
Call TI
-40 to 85
S01A
LM2660MM/NOPB
ACTIVE
VSSOP
DGK
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
S01A
LM2660MX
ACTIVE
SOIC
D
8
2500
TBD
Call TI
Call TI
-40 to 85
LM26
60M
LM2660MX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LM26
60M
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
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2-May-2013
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
8-May-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LM2660MM
VSSOP
DGK
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM2660MM/NOPB
VSSOP
DGK
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM2660MX
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM2660MX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-May-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM2660MM
VSSOP
DGK
8
1000
210.0
185.0
35.0
LM2660MM/NOPB
VSSOP
DGK
8
1000
210.0
185.0
35.0
LM2660MX
SOIC
D
8
2500
367.0
367.0
35.0
LM2660MX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
Pack Materials-Page 2
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