JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 本资料由东莞长电代理：FUYAT CO.，LTD提供0769-85388861 SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR (PNP) FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction SOT-23 MARKING: 2A 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. COLLECTOR Parameter Symbol Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 mA PC Total Device Dissipation 200 mW RθJA Thermal Resistance Junction to Ambient 625 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC=-10μA, IE=0 -40 V Collector-emitter breakdown voltage VCEO IC=-1mA, IB=0 -40 V Emitter-base breakdown voltage VEBO IE=-10μA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 μA Collector cut-off current ICEX VCE=-30V,VBE(off)=-3V -50 nA Emitter cut-off IEBO VEB=-5V, IC=0 -0.1 μA hFE(1) VCE=-1V, IC=-10mA 100 hFE(2) VCE=-1V, IC= -50mA 60 hFE(3) VCE=-1V, IC= -100mA 30 Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB= -5mA -0.4 V Base-emitter saturation voltage VBE(sat) IC= -50mA, IB=-5mA -0.95 V current DC current gain 300 Transition frequency fT VCE=-20V, IC=-10mA,f=100MHz Delay Time td VCC=-3V,VBE=-0.5V 35 nS Rise Time tr IC=-10mA, IB1=-IB2=-1mA 35 nS Storage Time ts VCC=-3V,IC=-10mA, 225 nS Fall Time tf IB1=-IB2=-1mA 75 nS 300 MHz CLASSIFICATION OF hFE(1) Rank Range O Y 100-200 200-300 Typical Characteristics PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn MMBT3906 PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn