FMMT591 TRANSISTOR (PNP) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 500 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol conditions MIN TYP MAX UNIT IC=-100μA, IE=0 -80 V IC=-10mA, IB=0 -60 V V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 μA hFE(1) VCE=-5V, IC=-1mA 100 hFE(2) 1 VCE=-5V, IC=-500mA 100 hFE(3) 1 VCE=-5V, IC=-1A 80 VCE=-5V, IC=-2A 15 Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage DC current gain 1 hFE(4) 1 Collector-emitter saturation voltage Base-emitter saturation voltage 300 VCE(sat)1 1 IC=-500mA, IB=-50mA -0.3 V VCE(sat)2 1 IC=-1A, IB=-100mA -0.6 V IC=-1A, IB=-100mA -1.2 V -1 V VBE(sat) Base-emitter voltage VBE Transition frequency fT Collector output capacitance 1 Test 1 Cob 1 VCE=-5V, IC=-1A VCE=-10V,IC=-50mA,,f=100MHz VCB=-10V,f=1MHz 150 MHz 10 Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%. １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF FMMT591 Typical characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５