FLM7179-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 35% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM7179-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 25.0 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 1700 2600 mA - 1700 - mS Test Conditions Transconductance gm VDS = 5V, IDS = 1100mA Pinch-off Voltage Vp VDS = 5V, IDS = 85mA -0.5 -1.5 -3.0 V IGS = -85µA -5.0 - - V 35.5 36.5 - dBm 8.0 9.0 - dB Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Power-added Efficiency Gain Flatness Idsr ηadd VDS =10V, IDS = 0.65 IDSS (Typ.), f = 7.1 ~ 7.9 GHz, ZS=ZL= 50 ohm ∆G - 1100 1300 mA - 35 - % - - ±0.6 dB -44 -46 - dBc 3rd Order Intermodulation Distortion IM3 f = 7.9 GHz, ∆f = 10 MHz 2-Tone Test Pout = 25.5dBm S.C.L. Thermal Resistance Rth Channel to Case - 5.0 6.0 °C/W ∆Tch 10V x Idsr x Rth - - 80 °C Channel Temperature Rise CASE STYLE: IB Edition 1.2 September 1999 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM7179-4F C-Band Internally Matched FET OUTPUT POWER & IM3 vs. INPUT POWER 33 24 Output Power (S.C.L.) (dBm) Total Power Dissipation (W) 30 18 12 6 0 50 100 150 31 VDS=10V f1 = 7.9 GHz f2 = 7.91 GHz 2-tone test Pout 29 -10 -20 27 25 -30 IM3 23 -40 21 -50 IM3 (dBc) POWER DERATING CURVE 200 Case Temperature (°C) 12 14 16 18 20 22 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. INPUT POWER 38 Output Power (dBm) Pin=28.5dBm 37 26.5dBm 24.5dBm 36 35 Output Power (dBm) 38 VDS=10V P1dB 36 Pout 34 60 32 45 30 15 18 7.1 7.3 7.5 7.7 30 ηadd 28 22.5dBm 34 VDS=10V f = 7.5 GHz 7.9 20 22 24 26 Input Power (dBm) Frequency (GHz) 2 28 ηadd (%) OUTPUT POWER vs. FREQUENCY FLM7179-4F C-Band Internally Matched FET S11 S22 0.2 +j100 +j25 7.3 7.1 +j10 7.5 7.7 7.9 7.5 0 10 7.3 0.1 +j250 7.7 6.9 GHz 8.1 8.1 50Ω 7.9 250 180° SCALE FOR |S21| 7.9 8.1 8.1 6.9 GHz 1 2 3 4 0° 7.7 7.1 7.1 7.5 6.9 GHz -j10 S21 S12 +90° SCALE FOR |S12| +j50 -j250 6.9 GHz 7.3 7.9 7.1 7.7 7.5 -j100 -j25 7.3 -90° -j50 S-PARAMETERS VDS = 10V, IDS = 1100mA FREQUENCY (MHZ) MAG S11 ANG MAG S21 ANG MAG S12 ANG MAG ANG 6900 .712 140.3 3.823 -24.3 .025 -45.8 .402 -113.7 7000 .714 127.0 3.840 -37.1 .032 -67.6 .354 -127.8 7100 .710 120.5 3.850 -42.7 .036 -77.9 .324 -136.3 7200 .701 108.1 3.852 -55.5 .045 -93.2 .288 -154.2 7300 .684 96.2 3.831 -68.0 .053 -106.9 .259 -175.1 7400 .658 84.6 3.820 -80.9 .061 -122.3 .249 162.0 7500 .625 73.0 3.804 -93.5 .068 -135.6 .251 140.4 7600 .584 61.4 3.783 -106.3 .075 -148.9 .262 120.3 7700 .535 49.2 3.768 -119.4 .082 -162.2 .275 102.2 7800 .481 36.1 3.756 -132.6 .088 -174.2 .295 86.7 7900 .421 20.8 3.744 -146.1 .093 172.4 .307 72.3 8000 .359 2.3 3.726 -160.0 .100 159.7 .305 59.4 8100 .300 -22.5 3.708 -174.9 .106 145.5 .293 45.9 3 S22 WWW.ALLDATASHEET.COM Copyright © Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www.AllDataSheet.com 100% Free DataSheet Search Site. Free Download. No Register. Fast Search System. www.AllDataSheet.com