ETC FLM7179-4F

FLM7179-4F
C-Band Internally Matched FET
FEATURES
•
•
•
•
•
•
•
High Output Power: P1dB = 36.5dBm (Typ.)
High Gain: G1dB = 9.0dB (Typ.)
High PAE: ηadd = 35% (Typ.)
Low IM3 = -46dBc@Po = 25.5dBm
Broad Band: 7.1 ~ 7.9GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed Package
DESCRIPTION
The FLM7179-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Condition
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
25.0
W
Total Power Dissipation
Tc = 25°C
PT
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Symbol
IDSS
Min.
Limit
Typ. Max.
Unit
VDS = 5V, VGS = 0V
-
1700 2600
mA
-
1700
-
mS
Test Conditions
Transconductance
gm
VDS = 5V, IDS = 1100mA
Pinch-off Voltage
Vp
VDS = 5V, IDS = 85mA
-0.5
-1.5
-3.0
V
IGS = -85µA
-5.0
-
-
V
35.5
36.5
-
dBm
8.0
9.0
-
dB
Gate Source Breakdown Voltage
VGSO
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
G1dB
Drain Current
Power-added Efficiency
Gain Flatness
Idsr
ηadd
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 7.1 ~ 7.9 GHz,
ZS=ZL= 50 ohm
∆G
-
1100 1300
mA
-
35
-
%
-
-
±0.6
dB
-44
-46
-
dBc
3rd Order Intermodulation
Distortion
IM3
f = 7.9 GHz, ∆f = 10 MHz
2-Tone Test
Pout = 25.5dBm S.C.L.
Thermal Resistance
Rth
Channel to Case
-
5.0
6.0
°C/W
∆Tch
10V x Idsr x Rth
-
-
80
°C
Channel Temperature Rise
CASE STYLE: IB
Edition 1.2
September 1999
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
1
FLM7179-4F
C-Band Internally Matched FET
OUTPUT POWER & IM3 vs. INPUT POWER
33
24
Output Power (S.C.L.) (dBm)
Total Power Dissipation (W)
30
18
12
6
0
50
100
150
31
VDS=10V
f1 = 7.9 GHz
f2 = 7.91 GHz
2-tone test
Pout
29
-10
-20
27
25
-30
IM3
23
-40
21
-50
IM3 (dBc)
POWER DERATING CURVE
200
Case Temperature (°C)
12
14
16
18
20
22
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. INPUT POWER
38
Output Power (dBm)
Pin=28.5dBm
37
26.5dBm
24.5dBm
36
35
Output Power (dBm)
38
VDS=10V
P1dB
36
Pout
34
60
32
45
30
15
18
7.1
7.3
7.5
7.7
30
ηadd
28
22.5dBm
34
VDS=10V
f = 7.5 GHz
7.9
20
22
24
26
Input Power (dBm)
Frequency (GHz)
2
28
ηadd (%)
OUTPUT POWER vs. FREQUENCY
FLM7179-4F
C-Band Internally Matched FET
S11
S22
0.2
+j100
+j25
7.3
7.1
+j10
7.5
7.7
7.9
7.5
0
10
7.3
0.1
+j250
7.7
6.9 GHz
8.1
8.1
50Ω
7.9
250
180°
SCALE FOR |S21|
7.9
8.1
8.1
6.9 GHz
1
2
3
4
0°
7.7
7.1
7.1
7.5
6.9 GHz
-j10
S21
S12
+90°
SCALE FOR |S12|
+j50
-j250
6.9 GHz
7.3
7.9
7.1
7.7
7.5
-j100
-j25
7.3
-90°
-j50
S-PARAMETERS
VDS = 10V, IDS = 1100mA
FREQUENCY
(MHZ)
MAG
S11
ANG
MAG
S21
ANG
MAG
S12
ANG
MAG
ANG
6900
.712
140.3
3.823
-24.3
.025
-45.8
.402
-113.7
7000
.714
127.0
3.840
-37.1
.032
-67.6
.354
-127.8
7100
.710
120.5
3.850
-42.7
.036
-77.9
.324
-136.3
7200
.701
108.1
3.852
-55.5
.045
-93.2
.288
-154.2
7300
.684
96.2
3.831
-68.0
.053
-106.9
.259
-175.1
7400
.658
84.6
3.820
-80.9
.061
-122.3
.249
162.0
7500
.625
73.0
3.804
-93.5
.068
-135.6
.251
140.4
7600
.584
61.4
3.783
-106.3
.075
-148.9
.262
120.3
7700
.535
49.2
3.768
-119.4
.082
-162.2
.275
102.2
7800
.481
36.1
3.756
-132.6
.088
-174.2
.295
86.7
7900
.421
20.8
3.744
-146.1
.093
172.4
.307
72.3
8000
.359
2.3
3.726
-160.0
.100
159.7
.305
59.4
8100
.300
-22.5
3.708
-174.9
.106
145.5
.293
45.9
3
S22
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