Inchange Semiconductor Product Specification MJ3000/3001 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・DARLINGTON ・High DC current gain ・Complement to type MJ2500/2501 APPLICATIONS ・For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS MJ3000 VCBO Collector-base voltage 60 Open base MJ3001 VEBO Emitter-base voltage V 80 MJ3000 Collector-emitter voltage UNIT 60 Open emitter MJ3001 VCEO VALUE V 80 Open collector 5 V IC Collector current 10 A IB Base current 0.2 A PD Total power dissipation 150 W Tj Junction temperature 200 ℃ Tstg Storage temperature -55~200 ℃ TC=25℃ Inchange Semiconductor Product Specification MJ3000/3001 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MJ3000 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT 60 IC=0.1A ;IB=0 MJ3001 V 80 VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=20mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=50mA 4.0 V Base-emitter on voltage IC=5A ; VCE=3V 3.0 V MJ3000 VCE=60V; RBE=1.0kΩ TC=150℃ 1.0 5.0 MJ3001 VCE=80V; RBE=1.0kΩ TC=150℃ 1.0 5.0 MJ3000 VCE=30V; IB=0 VBE ICER ICEO Collector cut-off current mA Collector cut-off current MJ3001 1.0 mA 2.0 mA VCE=40V; IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=5A ; VCE=3V 1000 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX UNIT 1.17 ℃/W Inchange Semiconductor Product Specification MJ3000/3001 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3