Inchange Semiconductor Product Specification 2SC5003 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage switching transistor ・Built-in damper diode APPLICATIONS ・Display horizontal deflection output; switching regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 7 A ICM Collector current-peak 14 A IB Base current 3.5 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC5003 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX 6 UNIT Base-emitter breakdown voltage IEB=300mA; IB=0 V VCEsat Collector-emitter saturation voltage IC=5A;IB=1.2A 5 V VBEsat Base-emitter saturation voltage IC=5A;IB=1.2A 1.5 V ICBO1 Collector cut-off current VCB=1200V; IE=0 100 μA ICBO2 Collector cut-off current VCB=1500V; IE=0 1 mA ICEO Collector cut-off current VCE=800V; IE=0 1 mA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=5A ; VCE=5V 4 VFEC Forward voltage IEC=7A fT Transition frequency IE=-0.5A ; VCE=12V COB Output capacitance VCB=10V;f=1MHz 9 2.0 V 4 MHz 100 pF Switching times tstg tf Storage time Fall time IC=4A;IB1=0.8A; IB2=-1.6A;RL=50Ω VCC=200V 2 4.0 μs 0.2 μs Inchange Semiconductor Product Specification 2SC5003 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC5003 Silicon NPN Power Transistors 4